Siemens BSS295 Datasheet
BSS 295
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• V
GS(th)
Type
BSS 295 50 V 1.4 A 0.3
= 0.8...2.0V
V
DS
I
D
R
DS(on)
Ω
Package Marking
TO-92 SS 295
Type Ordering Code Tape and Reel Information
BSS 295 Q67000-S238 E6288
BSS 295 Q67000-S105 E6325
Pin 1 Pin 2 Pin 3
G D S
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
R
GS
= 20 k
Ω
Gate source voltage
Gate-source peak voltage,aperiodic
Continuous drain current
T
= 24 °C
A
DC drain current, pulsed
T
= 25 °C
A
Power dissipation
T
= 25 °C
A
Symbol Values Unit
V
V
DS
DGR
50 V
50
V
V
I
GS
gs
D
±
±
14
20
A
1.4
I
Dpuls
5.6
P
tot
W
1
Semiconductor Group
1 12/05/1997
Maximum Ratings
BSS 295
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
1)
Symbol Values Unit
T
T
R
j
stg
thJA
-55 ... + 150 °C
-55 ... + 150
≤
125
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
Electrical Characteristics,
Parameter
= 25°C, unless otherwise specified
at
T
j
Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
= 0 V,
GS
= 0.25 mA,
I
D
= 25 °C
T
j
Gate threshold voltage
V
GS
V
=
DS, ID
= 1 mA
Zero gate voltage drain current
V
V
V
DS
DS
DS
= 50 V,
= 50 V,
= 30 V,
V
V
V
= 0 V,
GS
= 0 V,
GS
= 0 V,
GS
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-state resistance
V
V
GS
GS
= 10 V,
= 4.5 V,
= 1.4 A
I
D
= 1.4 A
I
D
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
50 - -
0.8 1.4 2
-
-
-
0.1
8
-
1 µA
50
100
- 10 100
-
-
0.25
0.45
0.3
0.5
K/W
V
nA
nA
Ω
Semiconductor Group
2 12/05/1997
BSS 295
Electrical Characteristics,
Parameter
Dynamic Characteristics
Transconductance
≥
2
V
DS
I
*
D * RDS(on)max, ID
Input capacitance
V
= 0 V,
GS
= 25 V, f = 1 MHz
V
DS
Output capacitance
V
= 0 V,
GS
= 25 V, f = 1 MHz
V
DS
Reverse transfer capacitance
V
= 0 V,
GS
= 25 V, f = 1 MHz
V
DS
Turn-on delay time
V
R
DD
G
= 30 V,
= 50
Ω
V
GS
= 10 V,
I
D
Rise time
V
R
DD
G
= 30 V,
= 50
Ω
V
GS
= 10 V,
I
D
Turn-off delay time
V
R
DD
G
= 30 V,
= 50
Ω
V
GS
= 10 V,
I
D
Fall time
V
R
DD
G
= 30 V,
= 50
Ω
V
GS
= 10 V,
I
D
= 25°C, unless otherwise specified
at
T
j
Symbol Values Unit
min. typ. max.
g
fs
= 1.4 A
C
iss
0.5 1.6 -
- 320 425
C
oss
- 110 170
C
rss
- 50 75
t
d(on)
= 0.29 A
- 8 12
t
r
= 0.29 A
- 20 30
t
d(off)
= 0.29 A
- 120 160
t
f
= 0.29 A
- 85 115
S
pF
ns
Semiconductor Group
3 12/05/1997
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