Siemens BSS192 Datasheet

BSS 192

SIPMOS

®

Small-Signal Transistor

• P channel

• Enhancement mode

• Logic Level

• V

= -0.8...-2.0 V

GS(th)

Pin 1 Pin 2 Pin 3 Pin 4

G D S D

Type

V

DS

I

D

R

DS(on)

Package Marking

BSS 192 -240 V -0.15 A 20 Ω SOT-89 KB

Type Ordering Code Tape and Reel Information

BSS 192 Q62702-S634 E6327

Maximum Ratings
Parameter Symbol Values Unit

Drain source voltage
Drain-gate voltage

R

= 20 k

GS

Ω

Gate source voltage
Continuous drain current

T

= 34 °C

A

DC drain current, pulsed

T

= 25 °C

A

Power dissipation

T

= 25 °C

A

V

DS

V

DGR

V

GS

I

D

I

Dpuls

P

tot

-240 V

-240

±

20

-0.15

-0.6

1

A

W

Semiconductor Group 1 18/02/1997

BSS 192

Maximum Ratings
Parameter Symbol Values Unit

Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air

1)

T
T
R

j
stg

thJA

-55 ... + 150 °C

-55 ... + 150

≤

125 K/W
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Electrical Characteristics, at

T

= 25°C, unless otherwise specified

j

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage

V

= 0 V,

GS

I

= -0.25 mA,

D

T

= 25 °C

j

V

(BR)DSS

V

-240 - -

Gate threshold voltage

=

V

GS

V

DS, ID

= -1 mA

Zero gate voltage drain current

V

= -240 V,

DS

V

= -240 V,

DS

V

= -60 V,

DS

V

V
V

GS

= 0 V,

GS

= 0 V,

GS

= 0 V,

T

= 25 °C

j

T

= 125 °C

j

T

= 25 °C

j

Gate-source leakage current

V

= -20 V,

GS

V

DS

= 0 V

Drain-Source on-state resistance

V

= -10 V,

GS

I

= -0.15 A

D

V

GS(th)

I

DSS

I

GSS

R

DS(on)

-0.8 -1.5 -2

-

-

-

-0.1

-10

-

-1

-100

-0.2

- -10 -100

- 10 20

µA

nA

Ω

Semiconductor Group 2 18/02/1997

BSS 192

Electrical Characteristics, at

T

= 25°C, unless otherwise specified

j

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance

≥

V

2

DS

I

*

D * RDS(on)max, ID

= -0.15 A

Input capacitance

V

= 0 V,

GS

V

= -25 V, f = 1 MHz

DS

Output capacitance

V

= 0 V,

GS

V

= -25 V, f = 1 MHz

DS

Reverse transfer capacitance

V

= 0 V,

GS

V

= -25 V, f = 1 MHz

DS

Turn-on delay time

V
R

DD

GS

= -30 V,

= 50

Ω

V

GS

= -10 V,

I

D

= -0.25 A

g

fs

C

iss

C

oss

C

rss

t

d(on)

S

0.06 0.12 ­pF

- 95 130

- 20 30

- 10 15
ns

- 8 12

Rise time

V
R

DD

GS

= -30 V,

= 50

Ω

V

GS

Turn-off delay time

V
R

DD

GS

= -30 V,

= 50 Ω

V

GS

Fall time

V
R

DD

GS

= -30 V,

= 50 Ω

V

GS

= -10 V,

= -10 V,

= -10 V,

I

= -0.25 A

D

I

= -0.25 A

D

I

= -0.25 A

D

t

r

t

d(off)

t

f

- 25 40

- 25 33

- 42 55

Semiconductor Group 3 18/02/1997