Siemens BSS139 Datasheet
SIPMOS Small-Signal Transistor BSS 139
● V
● I
D
● R
● N channel
● Depletion mode
● High dynamic resistance
● Available grouped in V
Type Ordering
DS
DS(on)
250 V
0.04 A
100 Ω
Code
GS(th)
Tape and Reel
Information
Pin Configuration Marking Package
123
BSS 139 Q62702-S612 E6327: 3000 pcs/reel; G S D STs SOT-23
BSS 139 Q67000-S221 E7941: 3000 pcs/reel;
V
selected in groups:
GS(th)
(see page 491)
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage
R
Drain-gate voltage,
= 20 kΩ V
GS
Gate-source voltage
Gate-source peak voltage, aperiodic
Continuous drain current,
Pulsed drain current,
Max. power dissipation,
T
= 25 ˚C I
A
T
= 25 ˚C I
A
T
= 25 ˚C P
A
Operating and storage temperature range
Thermal resistance, chip-ambient
V
V
V
D
D puls
T
j
R
DS
DGR
GS
gs
tot
, T
thJA
stg
250 V
250
± 14
± 20
0.04 A
0.12
0.36 W
– 55 … + 150 ˚C
≤ 350
K/W
(without heat sink)
chip-substrate – reverse side
1)
R
thJSR
≤ 285
DIN humidity category, DIN 40 040 – E –
IEC climatic category, DIN IEC 68-1 – 55/150/56
1)
For package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm.
Semiconductor Group 1 10.94
BSS 139
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V
= − 3 V, ID = 0.25 mA
GS
Gate threshold voltage
V
= 3 V, ID = 1 mA
DS
Drain-source cutoff current
V
= 250 V, VGS = − 3 V
DS
T
= 25 ˚C
j
T
= 125 ˚C
j
Gate-source leakage current
V
= 20 V, VDS = 0
GS
Drain-source on-resistance
V
= 0 V, ID = 0.014 A
GS
Dynamic Characteristics
Forward transconductance
V
≥ 2 × ID× R
DS
DS(on)max
, ID = 0.04 A
Input capacitance
V
= 0, VDS = 25 V, f = 1 MHz
GS
Output capacitance
V
= 0, VDS = 25 V, f = 1 MHz
GS
Reverse transfer capacitance
V
= 0, VDS = 25 V, f = 1 MHz
GS
Turn-on time
V
=30V,VGS = − 2 V ... + 5 V,RGS =50Ω,
DD
I
=0.15 A
D
Turn-off time t
V
=30V,VGS = − 2 V ... + 5 V, RGS =50Ω,
DD
I
=0.15 A
D
t
, (ton = t
on
, (t
off
+ tr)
d(on)
= t
d(off)
+ tf)
off
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iiss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
250 – –
− 1.8 − 1.4 − 0.7
–
–
–
–
100
200
nA
µA
nA
– 10 100
Ω
– 75 100
S
0.05 0.07 –
pF
– 85 120
–610
–23
–46ns
–1015
–1013
–1520
Semiconductor Group 2
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