Siemens BSS124 Datasheet

BSS 124

SIPMOS

®

Small-Signal Transistor

• N channel

• Enhancement mode

V

•

Type

BSS 124 400 V 0.12 A 28

= 1.5 ...2.5 V

GS(th)

V

DS

I

D

R

DS(on)

Ω

Package Marking

TO-92 SS 124

Type Ordering Code Tape and Reel Information

BSS 124 Q67000-S172 E6288

Pin 1 Pin 2 Pin 3

G D S

Maximum Ratings Parameter

Drain source voltage Drain-gate voltage

R

GS

= 20 k

Ω

Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current

T

= 37 °C

A

DC drain current, pulsed

T

= 25 °C

A

Power dissipation

T

= 25 °C

A

Symbol Values Unit

V V

DS DGR

400 V

400

V V I

GS gs

D

± ±

14 20

A

0.12

I

Dpuls

0.48

P

tot

W

1

Semiconductor Group

1 12/05/1997

Maximum Ratings

BSS 124

Parameter

Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air

1)

Symbol Values Unit

T T R

j stg

thJA

-55 ... + 150 °C

-55 ... + 150

≤

125 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Electrical Characteristics,

Parameter

at

= 25°C, unless otherwise specified

T

j

Symbol Values Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage

V

GS

= 0 V,

= 0.25 mA,

I

D

= 25 °C

T

j

Gate threshold voltage

V

GS

=

V

DS, ID

= 1 mA

Zero gate voltage drain current

V V

DS DS

= 400 V, = 400 V,

V V

GS GS

= 0 V, = 0 V,

= 25 °C

T

j

= 125 °C

T

j

Gate-source leakage current

V

GS

= 20 V,

V

DS

= 0 V

Drain-Source on-state resistance

V

GS

= 10 V,

= 0.12 A

I

D

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

R

DS(on)

400 - -

1.5 2 2.5

-

0.1 8

1 50

- 10 100

- 16 28

K/W

V

µA

nA

Ω

Semiconductor Group

2 12/05/1997

BSS 124

Electrical Characteristics,

Parameter

Dynamic Characteristics

Transconductance

≥

2

V

DS

I

*

D * RDS(on)max, ID

Input capacitance

V

GS

= 0 V,

= 25 V, f = 1 MHz

V

DS

Output capacitance

V

GS

= 0 V,

= 25 V, f = 1 MHz

V

DS

Reverse transfer capacitance

V

GS

= 0 V,

= 25 V, f = 1 MHz

V

DS

Turn-on delay time

V R

DD G

= 30 V,

= 50

Ω

V

GS

= 10 V,

I

D

Rise time

V R

DD G

= 30 V,

= 50

Ω

V

GS

= 10 V,

I

D

Turn-off delay time

V R

DD G

= 30 V,

= 50

Ω

V

GS

= 10 V,

I

D

Fall time

V R

DD G

= 30 V,

= 50

Ω

V

GS

= 10 V,

I

D

= 25°C, unless otherwise specified

at

T

j

Symbol Values Unit

min. typ. max.

g

fs

= 0.12 A

C

iss

0.1 0.19 -

- 90 120

C

oss

- 10 15

C

rss

- 4 6

t

d(on)

= 0.21 A

- 5 8

t

r

= 0.21 A

- 10 15

t

d(off)

= 0.21 A

- 18 25

t

f

= 0.21 A

- 15 20

S

pF

ns

Semiconductor Group

3 12/05/1997