Siemens BF543 Datasheet
Silicon N Channel MOS FET Triode BF 543
Preliminary Data
● For RF stages up to 300 MHz
preferably in FM applications
● IDSS = 4 mA, gfs = 12 mS
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Ordering Code
Marking
(tape and reel)
BF 543 Q62702-F1372LDs SOT-23
Pin Configuration
1 2 3
G D S
Package
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage V
DS 20 V
Drain current ID 30 mA
Gate-source peak current
± IGSM 10
Total power dissipation, TA ≤ 60 ˚C Ptot 200 mW
Storage temperature range T
Channel temperature T
Ambient temperature range T
stg – 55 … + 150 ˚C
ch 150
A – 55 … + 150
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 450 K/W
1)
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm× 16.7 mm × 0.7 mm.
Semiconductor Group 1
07.94
Electrical Characteristics
I
A = 25 ˚C, unless otherwise specified.
at T
BF 543
Parameter
Symbol
min.
typ.
max.
UnitValues
DC Characteristics
Drain-source breakdown voltage
D = 10 µA, – VGS = 4 V
Gate-source breakdown voltage
± IGS = 10 mA, VDS = 0
Gate cutoff current
± VGS = 6 V, VDS = 0
DS = 10 V, VGS = 0
V
Gate-source pinch-off voltage
DS = 10 V, ID = 20 µA
V
(BR)DS
V
±V(BR)GSS
± IGSS
I
DSS 2.0 4 6.0
– V
GS(p) – 0.7 1.5
20
7
–
–
–
–
–
12
50
V
nA
mADrain current
V
AC Characteristics
DS = 10 V, ID = 4 mA, f = 1 kHz
V
g
fs 9.5 12 –
mSForward transconductance
DS = 10 V, ID = 4 mA, f = 1 MHz
V
DS = 10 V, ID = 4 mA, f = 1 MHz
V
DS = 10 V, ID = 4 mA, f = 1 MHz
V
DS = 10 V, ID = 4 mA, f = 200 MHz
V
G = 2 mS, GL = 0.5 mS
G
Noise figure (test circuit)
DS = 10 V, ID = 4 mA, f = 200 MHz
V
G = 2 mS, GL = 0.5 mS
G
C
gss – 2.7 –
C
dg –18–
C
dss – 0.9 –
p –22–
G
F –1–
pFGate-1 input capacitance
fFReverse transfer capacitance
pFOutput capacitance
dBPower gain (test circuit)
Semiconductor Group 2
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