Siemens BF517 Datasheet
BF 517
NPN Silicon RF Transistor
• For amplifier and oscillator
applications in TV-tuners
Type Marking Ordering Code Pin Configuration Package
BF 517 LRs Q62702-F42 1 = B 2 = E 3 = C SOT-23
Maximum Ratings of any single Transistor
Parameter Symbol Values Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
f
≥ 10 MHz
Total power dissipation
T
≤ 55 °C
S
Junction temperature
Ambient temperature
Storage temperature
V
V
V
I
C
I
CM
P
T
T
T
CEO
CBO
EBO
tot
j
A
stg
15 V
20
2.5
25 mA
50
mW
280
150 °C
- 65 + 150
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤
340 K/W
1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm
Semiconductor Group 1 Aug-02-1996
BF 517
Electrical Characteristics at
T
= 25°C, unless otherwise specified.
A
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 1 mA,
C
I
B
= 0
Collector-base cutoff current
V
= 15 V,
CB
I
E
= 0
DC current gain
I
= 5 mA,
C
V
CE
= 10 V
Collector-emitter saturation voltage
I
= 10 mA,
C
I
= 1 mA
B
V
(BR)CEO
I
CBO
h
FE
V
CEsat
V
15 - -
nA
- - 50
-
25 - 250
V
- 0.1 0.5
AC Characteristics of any single Transistor
Transition frequency
I
= 5 mA,
C
V
= 10 V, f = 200 MHz
CE
f
T
GHz
1 2 -
Collector-base capacitance
V
= 5 V,
CB
V
BE
=
v
= 0 , f = 1 MHz
be
Collector-emitter capacitance
V
= 5 V,
CE
V
BE
=
v
= 0 , f = 1 MHz
be
Input capacitance
V
= 0.5 V,
EB
I
=
i
= 0 , f = 1 MHz
C
c
Output capacitance
V
= 5 V,
CE
V
BE
=
v
= 0 , f = 1 MHz
be
Noise figure
I
= 5 mA,
C
Z
= 75
S
Ω
V
= 10 V, f = 100 MHz
CE
C
C
C
C
F
cb
ce
ibo
obs
pF
0.3 0.55 0.75
- 0.25 0.4
- 1.45 -
- 0.8 dB
- 2.5 -
Semiconductor Group 2 Aug-02-1996
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