Siemens BF506 Datasheet

BF 506

PNP Silicon RF Transistor BF 506

● For VHF mixer and oscillator stages

2

3

1

Type Ordering CodeMarking

Pin Configuration

Package

1 2 3

BF 506 Q62702-F534– TO-92

C B E

Maximum Ratings
Parameter Symbol Values Unit

Collector-emitter voltage V

CE0 35 V

Collector-base voltage VCB0 40
Emitter-base voltage V

EB0 4

Collector current IC 30 mA
Base current I
Total power dissipation, T

A ≤ 45 ˚C Ptot 300 mW

Junction temperature T
Storage temperature range T

B 5

j 150 ˚C
stg – 55 … + 150

Thermal Resistance

1)

Junction - ambient

1)

For detailed information see chapter Package Outlines.

Semiconductor Group 1

th JA ≤ 350 K/W

R

Electrical Characteristics

I

I

I

I

I

I
R

A = 25 ˚C, unless otherwise specified.

at T

BF 506 BF 506

Parameter

DC Characteristics

Collector-emitter breakdown voltage

C = 2 mA

Collector-base breakdown voltage

C = 10 µA

Emitter-base breakdown voltage

E = 10 µA

CB = 20 V

V

DC current gain

C = 3 mA, VCE = 10 V

AC Characteristics

C = 2 mA, VCE = 10 V, f = 100 MHz

Symbol

min.

V

(BR) CE0

V(BR) CB0

V(BR) EB0

I

CB0 – – 100

h

FE 25 – –

f

T – 550 –

35

40

4

typ.

–

–

–

max.

–

–

–

UnitValues

V

nACollector cutoff current

–

MHzTransition frequency

C

CB = 10 V, VBE = 0 V, f = 1 MHz

V

C = 2 mA, VCB = 10 V, f = 200 MHz

S = 60 Ω

ce – 0.12 –

F –3–

VCollector-emitter capacitance

dBNoise figure

Semiconductor Group 2