Siemens BF423, BF421 Datasheet
PNP Silicon Transistors BF 421
R
With High Reverse Voltage BF 423
● High breakdown voltage
● Low collector-emitter saturation voltage
● Low capacitance
● Complementary types: BF 420, BF 422 (NPN)
2
3
1
Type Ordering CodeMarking
Pin Configuration
Package
1 2 3
BF 421
BF 423
– TO-92
Q62702-F532
Q62702-F496
E C B
Maximum Ratings
Parameter Symbol Values Unit
BF 421 BF 423
Collector-emitter voltage V
Collector-emitter voltage
BE = 2.7 k
Collector-base voltage V
CE0 V
VCER
CB0
– 250
300 –
300 250
Emitter-base voltage VEB0 5
Collector current IC mA
Peak base current I
Total power dissipation, T
C = 88 ˚C Ptot mW
BM 100
50
830
1)
Junction temperature Tj ˚C
Storage temperature range T
stg
150
– 65 … + 150
Thermal Resistance
Junction - ambient Rth JA ≤ 150 K/W
Junction - case
1)
For detailed information see chapter Package Outlines.
2)
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
2)
Semiconductor Group 1
Rth JC ≤ 75
5.91
Electrical Characteristics
Ω
I
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
BF 421
BF 423
UnitValuesParameter Symbol
min. typ. max.
C = 1 mA BF 423
Collector-emitter breakdown voltage
C = 10 µA, RBE = 2.7 k BF 421
Collector-base breakdown voltage
C = 10 µA BF 421
BF 423
V
(BR)CE0 250 – –
V(BR)CER 300 – –
(BR)CB0
V
300
250
–
–
–
–
VCollector-emitter breakdown voltage
Emitter-base breakdown voltage, IE = 10 µA V(BR)EB0 5––
I
CB0 ––10
nACollector cutoff current
VCB = 200 V
ICER ––10
µACollector cutoff current
VCE = 200 V, RBE = 2.7 k , TA =150 ˚C
Emitter cutoff current, VEB = 5 V IEB0 ––10
C = 100 µA, VCE = 20 V
C = 25 mA, VCE = 20 V
Collector-emitter saturation voltage
C = 25 mA, Tj =150 ˚C
1)
FE
h
15
50
–
–
–
–
VCEsatRF ––20
–DC current gain
V
AC characteristics
C = 20 mA, VCE = 10 V, f = 20 MHz
CB = 30 V, f = 1 MHz
V
1)
Pulse test: t ≤ 300 µs, D ≤ 2%.
Semiconductor Group 2
f
T – 100 –
C
obo – 0.8 –
MHzTransition frequency
pFOutput capacitance
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