Siemens BF414 Datasheet

BF 414

NPN Silicon RF Transistor BF 414

● For low-noise, common base

VHF and FM stages

2

3

1

Type Ordering CodeMarking

Pin Configuration

Package

1 2 3

BF 414 Q62702-F517– TO-92

C B E

Maximum Ratings
Parameter Symbol Values Unit

Collector-emitter voltage V

CE0 30 V

Collector-base voltage VCB0 40
Emitter-base voltage V

EB0 4

Collector current IC 25 mA
Base current I
Total power dissipation, T

A ≤ 45 ˚C Ptot 300 mW

Junction temperature T
Storage temperature range T

B 3

j 150 ˚C
stg – 55 … + 150

Thermal Resistance

1)

Junction - ambient

1)

For detailed information see chapter Package Outlines.

Semiconductor Group 1

th JA ≤ 350 K/W

R

Electrical Characteristics

I
I

I
R

I

I

I

I

A = 25 ˚C, unless otherwise specified.

at T

BF 414

Parameter

DC Characteristics

Collector-emitter breakdown voltage

C = 2 mA, IB = 0

Collector-base breakdown voltage

C = 10 µA, IE = 0

Emitter-base breakdown voltage

E = 10 µA

CB = 20 V

V

DC current gain

C = 4 mA, VCE = 10 V

AC Characteristics

C = 1 mA, VCE = 10 V, f = 100 MHz
C = 5 mA, VCE = 10 V, f = 100 MHz

Symbol

min.

(BR) CE0

V

V(BR) CB0

V(BR) EB0

I

CB0 ––60

h

FE 30 80 –

T

f

30

40

4

–
–

typ.

–

–

–

400
560

max.

–

–

–

–
–

UnitValues

V

nACollector cutoff current

–

MHzTransition frequency

C

ce – 0.1 –

CE = 10 V, VBE = 0 V, f = 1 MHz

V

C = 5 mA, VCE = 10 V, f = 100 MHz

S = 60 Ω

F –3–

pFCollector-emitter capacitance

dBNoise figure

Semiconductor Group 2