Siemens BSS64, BCX41 Datasheet

BCX 41

BSS 64

NPN Silicon AF and Switching Transistor BCX 41

BSS 64

● High breakdown voltage

● Low collector-emitter saturation voltage

● Complementary types: BCX 42, BSS 63 (PNP)

Type Ordering Code

BCX 41
BSS 64

Marking

EKs
AMs

(tape and reel)

Q62702-C1659
Q62702-S535

Pin Configuration

1 2 3

B E C

Package

SOT-23

Maximum Ratings
Parameter Symbol Values Unit

BSS 64 BCX 41

Collector-emitter voltage V
Collector-base voltage VCB0 120
Emitter-base voltage V
Collector current I
Peak collector current I
Base current I
Peak base current I
Total power dissipation, T

S =79˚C Ptot 330 mW

CE0 80 V

125
125

EB0 5
C 800 mA
CM 1A
B 100 mA
BM 200

5

1)

Junction temperature T
Storage temperature range T

j 150 ˚C

stg – 65 … + 150

Thermal Resistance

Junction - ambient

2)

Rth JA ≤ 285 K/W

Junction - soldering point Rth JS ≤ 215

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

5.91

Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.

I

I

I

I

I
I
I
I
I
I
I

I
I
I

I

Parameter Symbol

min. typ. max.

DC characteristics

BCX 41

BSS 64

UnitValues

(BR)CE0

V

C = 10 mA BSS 64

BCX 41

1

Collector-base breakdown voltage

C = 100 µA BSS 64

Emitter-base breakdown voltage

E = 10 µA

Collector cutoff current

CB = 80 V BSS 64

V

CB = 100 V BCX 41

V

CB = 80 V, TA = 150 ˚C BSS 64

V

CB = 100 V, TA = 150 ˚C BCX 41

V

)

BCX 41

(BR)CB0

V

V

(BR)EB0 5––

I

CB0

80
125

120
125

–
–
–
–

–
–

–
–

–
–
–
–

–
–

–
–

100
100
20
20

ICE0

CE = 100 V

V

A = 85 ˚C BCX 41

T

A = 125 ˚C BCX 41

T

I

EB0 – – 100

EB = 4 V

V

1

)

C = 100 µA, VCE = 1 V BCX 41
C = 1 mA, VCE = 1 V BSS 64
C = 4 mA, VCE = 1 V BSS 64
C = 10 mA, VCE = 1 V BSS 64
C = 20 mA, VCE = 1 V BSS 64
C = 100 mA, VCE = 1 V BCX 41
C = 200 mA, VCE = 1 V BCX 41

1

)

C = 300 mA, IB = 30 mA BCX 41
C = 4 mA, IB = 0.4 mA BSS 64
C = 50 mA, IB = 15 mA BSS 64

1

Base-emitter saturation voltage

C = 300 mA, IB = 30 mA BCX 41

)

AC characteristics

h

FE

VCEsat

V

BEsat – – 1.4

–
–

25
–
20
–
–
63
40

–
–
–

–
–

–
60
80
80
55
–
–

–
–
–

10
75

–
–
–
–
–
–
–

0.9

0.7

3.0

VCollector-emitter breakdown voltage

nA
nA

µA
µA

µACollector cutoff current

nAEmitter cutoff current

–DC current gain

VCollector-emitter saturation voltage

f

T – 100 –

C = 20 mA, VCE = 5 V, f = 20 MHz

MHzTransition frequency

CB = 10 V, f = 1 MHz

V

1)

Pulse test: t ≤ 300 µs, D = 2 %

C

obo –12–

pFOutput capacitance

Semiconductor Group 2