Siemens BCX12 Datasheet

NPN Silicon AF Switching Transistor BCX 12

● For general AF applications

● High breakdown voltage

● Low collector-emitter saturation voltage

● Complementary type: BCX 13 (PNP)

2

3

1

Type Ordering CodeMarking

Pin Configuration

Package

1 2 3

BCX 12 Q62702-C25BCX 12 TO-92

C B E

Maximum Ratings
Parameter Symbol Values Unit

Collector-emitter voltage V

CE0 125 V

Collector-base voltage VCB0 125
Emitter-base voltage V
Collector current I
Peak collector current I
Base current I
Peak base current I
Total power dissipation, T

C =66˚C Ptot 625 mW

Junction temperature T

EB0 5
C 800 mA
CM 1A
B 100 mA
BM 200

j 150 ˚C

1)

Storage temperature range T

Thermal Resistance

Junction - ambient R
Junction - case

1)

For detailed information see chapter Package Outlines.

2)

Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.

2)

Semiconductor Group 1

stg – 65 … + 150

th JA ≤ 200 K/W

Rth JC ≤ 135

5.91

Electrical Characteristics

I

I

I

I
I
I
I

I

I

I

A = 25 ˚C, unless otherwise specified.

at T

BCX 12

Parameter Symbol

UnitValues

min. typ. max.

DC characteristics

V

(BR)CE0 125 – –

C = 10 mA, IB = 0

Collector-base breakdown voltage

C = 100 µA, IB = 0

Emitter-base breakdown voltage

E = 10 µA, IC = 0

Collector-base cutoff current

CB = 100 V, IE = 0

V

CB = 100 V, IE = 0, TA = 150 ˚C

V

EB = 4 V

V

DC current gain

C = 1 mA,VCE = 1 V
C = 10 mA,VCE = 1 V
C = 100 mA,VCE = 1 V
C = 200 mA,VCE = 1 V

C = 500 mA, IB = 50 mA

Base-emitter saturation voltage

C = 500 mA, IB = 50 mA

1)

1)

1)

V

(BR)CB0 125 – –

V

(BR)EBS 5––

CB0

I

–
–

I

EB0 – – 100

–
–

100
10

hFE

25
50
63
40

V

CEsat – – 1.0

V

BEsat – – 1.6

–
–
–
–

–
–
–
–

VCollector-emitter breakdown voltage

nA

µA

nAEmitter cutoff current

–

VCollector-emitter saturation voltage

AC characteristics

f

T – 100 –

C = 20 mA, VCE = 5 V, f = 20 MHz

CB = 10 V, f = 1 MHz

V

C

obo –10–

MHzTransition frequency

pFOutput capacitance

1)

Pulse test: t ≤ 300 µs, D ≤ 2 %.

Semiconductor Group 2