Siemens BAT114-099 Datasheet
Silicon Dual Schottky Diode BAT 114-099
Features
• High barrier diode for balanced mixers, phase
detectors and modulators
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type Marking Ordering Code
Pin Configuration Package
(taped & reel)
BAT 114-099 S7 Q62702-A1017 SOT-143
1)
Dimensions see chapter Package Outlines
Maximum Ratings
(per diode)
Parameter Symbol Limit Values Unit
Reverse voltage V
Forward current
Operation temperature
Storage temperature
I
T
T
R
F
op
stg
4V
90 mA
− 55 to + 150 °C
− 55 to + 150 °C
1)
Power dissipation,
Semiconductor Group 326 01.97
T
≤ 70 °C P
S
tot
100 mW
BAT 114-099
Thermal Resistance
(per diode)
Parameter Symbol Limit Values Unit
Junction to soldering point R
Junction to ambient
1)
Mounted on alumina 15 mm × 16.7 mm to 0.7 mm
1)
R
thJS
thJA
≤ 780 K/W
≤ 1020 K/W
Electrical Characteristics
(per diode;
T
= 25 °C)
A
Parameter Symbol Limit Values Unit
min. typ. max.
Breakdown voltage
I
= 5 µA
R
Forward voltage
I
= 1 mA
F
I
= 10 mA
F
Forward voltage matching
I
= 10 mA
F
Diode capacitance
V
= 0 V, f = 1 MHz
R
1)
V
V
∆
C
BR
F
V
T
V
4 −−
V
−
−
F
0.6
0.7
0.7
0.8
mV
−−10
pF
− 0.25 0.5
Forward resistance
I
= 10 mA / 50 mA
F
1)
∆VF is difference between lowest and highest VF in component.
R
F
Ω
− 5.5 −
Semiconductor Group 327
Loading...