Siemens BAS116 Datasheet
Silicon Low Leakage Diode BAS 116
● Low-leakage applications
● Medium speed switching times
● Single diode
Type Ordering Code
Marking
Pin Configuration
Package
(tape and reel)
BAS 116 Q62702-A919JVs SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Reverse voltage V
R 75 V
Peak reverse voltage VRM 85
Forward current IF 250 mA
Surge forward current, t= 1
Total power dissipation, T
µs IFS 4.5 A
S =54˚C Ptot 370 mW
Junction temperature Tj 150 ˚C
Storage temperature range T
stg – 65 … + 150
Thermal Resistance
1)
Junction - ambient
2)
Rth JA ≤ 330 K/W
Junction - soldering point Rth JS ≤ 260
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1
5.91
Electrical Characteristics
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
BAS 116
Parameter Symbol
DC characteristics
V
(BR) 75 – –
(BR) = 100 µA
V
F
F = 1mA
F = 10 mA
F = 50 mA
F = 150 mA
R
I
R = 75 V
V
R = 75 V, TA = 150 ˚C
V
AC characteristics
C
D –2–
R = 0 V, f = 1 MHz
V
min. typ. max.
–
–
–
–
–
–
–
–
–
–
–
–
900
1000
1100
1250
5
80
UnitValues
VBreakdown voltage
mVForward voltage
nAReverse current
pFDiode capacitance
rr – 0.5 3
t
F = 10 mA, IR = 10 mA, RL = 100 Ω
measured at I
R = 1 mA
Test circuit for reverse recovery time
Pulse generator: tp = 5 µs, D = 0.05 Oscillograph: R = 50 Ω
r = 0.6 ns, Rj = 50 Ω tr = 0.35 ns
t
≤ 1pF
C
µsReverse recovery time
Semiconductor Group 2
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