Siemens BAR74 Datasheet

Silicon Switching Diode BAR 74

● For high-speed switching

Type Ordering Code

Marking

Pin Configuration

Package

(tape and reel)

BAR 74 Q62702-F704JBs SOT-23

Maximum Ratings
Parameter Symbol Values Unit

Reverse voltage V

R 50 V

Peak reverse voltage VRM 50
Forward current IF 250 mA
Surge forward current, t= 1
Total power dissipation, T

µs IFS 4.5 A

S =54˚C Ptot 370 mW

Junction temperature Tj 150 ˚C
Storage temperature range T

stg – 65 … + 150

Thermal Resistance

1)

Junction - ambient

2)

Rth JA ≤ 330 K/W

Junction - soldering point Rth JS ≤ 260

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

07.94

Electrical Characteristics

I

I

I

A = 25 ˚C, unless otherwise specified.

at T

BAR 74 BAR 74

Parameter Symbol

DC characteristics

V

(BR) 50 – –

(BR) = 100 µA

Forward voltage

F = 100 mA

R = 50 V

V

R = 50 V, TA = 150 ˚C

V

V

F ––1

R

I

AC characteristics

C

D ––2

R = 0 V, f = 1 MHz

V

rr ––4

t

F = 10 mA, IR = 10 mA, RL = 100 Ω

measured at I

R = 1 mA

min. typ. max.

–
–

–
–

0.1
100

UnitValues

VBreakdown voltage

µAReverse current

pFDiode capacitance

nsReverse recovery time

Test circuit for reverse recovery time

Pulse generator: t

p = 100 ns, D = 0.05 Oscillograph: R = 50 Ω
r = 0.6 ns, Rj = 50 Ω tr = 0.35 ns

t

≤ 1pF

C

Semiconductor Group 2