Siemens BAR66 Datasheet
Silicon PIN Diode Array
ll
Surge protection device
l
Two PIN diodes, series configuration
l
Designed for surge overvoltage clamping in
antiparallel connection
BAR66
Type Marking Ordering Code
(taped)
Pin Configuration
1 2 3
Package 1)
BAR66 PMs Q62702-A1473 A1 C2 C1/A2 SOT-23
Maximum Ratings
Parameter Symbol BAR66 Unit
Reverse voltage
Forward current
Forward current (tp = 1µS)
Power dissipation TS ≤ 25°C
Operating temperature range
Storage temperature range
1)
V
R 150 V
I
F 200 mA
I
F 20 A
P
tot
T
op
T
stg
250 mW
-55...+150 °C
-55...+150 °C
Thermal Resistance
Junction-ambient
1)
R
th JA
≤ 450 K/W
____________________
1)Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group 1 Edition A01, 05.05.94
BAR66
Characteristics per Diode
at
T
= 25 °C, unless otherwise specified.
A
Parameter Symbol Value Unit
min. typ. max.
V
Reverse current
I
R = 5 µA
Forward voltage
I
F = 50 mA
Diode capacitance
V
R = 35 V,
V
R = 0 V ,
f
=1M Hz
f
=100 MHz
Forward resistance
I
F = 10 mA,
f
= 100 MHz
R
150 - -
V
F
- 0.95 1.2
C
T
-
-
r
f
0.4
0.35
0.6
-
- 1.5 -
V
V
pF
Ω
Charge carrier lifetime
I
=10 mA,
I
R = 6 mA,IR = 3 mA
Series inductance
Dioden capacitance
f
= 1 MHz
C
= f (
T
τ
L
µs
- 0.7 -
L
S
*
V
)
R
-2-nH
Semiconductor Group 2 Edition A01, 05.05.94
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