Siemens BAR65-03W Datasheet

BAR 65-03W
Silicon RF Switching Diode
Preliminary data
• Low loss, low capacitance PIN-diode
• Band switch for TV-tuners
• Series diode for mobile communications transmit-receive switch
BAR 65-03WM/blue Q62702- 1 = C 2 = A SOD-323
Q62702-A1047
Maximum Ratings Parameter Symbol Values Unit
Diode reverse voltage Forward current Operating temperature range Storage temperature
V I T T
F
R
op stg
30 V
100 mA
- 55 ... + 125 °C
- 55 ... + 150
Semiconductor Group 1 Mar-04-1996
BAR 65-03W
Electrical Characteristics at
T
=25°C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
V
= 20 V,
R
T
= 25 °C
A
Forward voltage
I
= 100 mA
F
I
V
R
nA
- - 20
F
V
- 0.93 1
AC characteristics
Diode capacitance
V
= 1 V, f = 1 MHz
R
V
= 3 V, f = 1 MHz
R
Forward resistance
I
= 5 mA, f = 100 MHz
F
I
= 10 mA, f = 100 MHz
F
Series inductance
C
r
L
T
-
-
f
-
-
s
- 1.8 - nH
0.6
0.57
0.65
0.56
0.9
0.8
0.95
0.9
pF
Semiconductor Group 2 Mar-04-1996
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