Siemens BAR65-02W Datasheet
BAR 65-02W
Semiconductor Group
Jun-18-19981
Silicon RF Switching Diode
Preliminary data
• Low loss, low capacitance PIN-diode
• Band switch for TV-tuners
• Series diode for mobile communication
transmit-receiver switch
1
VES05991
2
Type Marking Ordering Code Pin Configuration Package
BAR 65-02W N Q62702-A1216 1 = C 2 = A SCD-80
Maximum Ratings
Parameter
Symbol Value Unit
Diode reverse voltage V
V
R
30
Forward current
I
F
100 mA
Operating temperature range °C
T
op
- 55 ...+125
- 55 ...+150Storage temperature
T
stg
Semiconductor Group 1 1998-11-01
BAR 65-02W
Semiconductor Group
Jun-18-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter
ValuesSymbol Unit
max.typ.min.
DC characteristics
Reverse current
V
R
= 20 V
I
R
- - 20 nA
Forward voltage
I
F
= 100 mA
- 0.93 V1
V
F
AC characteristics
pF
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 3 V, f = 1 MHz
0.6
0.57
-
-
C
T
0.9
0.8
Forward resistance
I
F
= 5 mA, f = 100 MHz
I
F
= 10 mA, f = 100 MHz
r
f
-
-
Ω
0.65
0.56
0.95
0.9
Series inductance
L
s
- 0.6 - nH
Semiconductor Group 2 1998-11-01
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