Siemens BAR64-06, BAR64-05, BAR64-04, BAR64 Datasheet
j
Silicon PIN Diode
l
High voltage current controlled
l
RF resistor for RF attenuator and swirches
l
Freqency range above 1 MHz
l
Low resistance and short carrier lifetime
l
For frequencies up to 3 GHz
BAR 64...
Type Marking Ordering code
(tape and reel)
Pin configuration
1 2 3
Package
BAR 64 POs Q62702-A1041 A - C SOT-23
BAR 64-04 PPs Q62702-A1010 A C C/A
BAR 64-05 PRs Q62702-A1042 A A C/C
BAR 64-06 PSs Q62702-A1043 C C A/A
Maximum ratings per diode
Parameter Symbol BAR 64 Unit
Reverse voltage
Forward current
Total Power dissipation TS ≤ 90°C
BAR64-04,-05,-06 T
≤ 65°C
S
Junction temperature
Operating temperature range
Storage temperature range
V
R 200 V
I
F
P
tot
100 mA
250
250
T
T
op
T
stg
150 °C
-55 +150°C °C
-55...+150°C °C
mW
Thermal resistance
1)
Junction-ambient
BAR64
BAR64-04,-05,-06
Junction-soldering point
BAR64
BAR64-04,-05,-06
_________________________
1)Package mounted on alumina 15mm x 16.7mm x 0.7mm
1)
R
th JA
K/W
≤ 320
≤ 500
R
th JS
≤ 240
≤ 340
Semiconductor Group 1 Edition A01, 23.02.95
BAR 64...
Electrical characteristics
at
T
= 25 °C, unless otherwise specified.
A
Parameter Symbol Value Unit
min. typ. max.
DC characteristics per diode
Breakdown voltage
I
= 5 µA
R
Forward voltage
I
= 50 mA
F
Diode capacitance
V
= 20 V, f = 1 MHz
R
Forward resistance
I
= 1 mA, f = 100 MHz
F
I
= 10 mA, f = 100 MHz
F
I
= 100 mA, f = 100 MHz
F
Charge carrier lifetime
I
= 10 mA,
F
I
= 6 mA,
R
Series inductance
I
= 3 mA
R
V
V
C
r
τ
L
f
L
s
(BR)
F
T
200 - -
- - 1.1
- 0.23 0.35
-
--
12.5
2.1
0.85
20
3.8
1.35
- 1.55 -
- 1.4 - nH
V
V
pF
Ω
µs
r
= f (
T
T
)
;
Forward current
mounted on alumina BAR64
*
F
*
S
A
mA
T
I
F
T
A
Forward current
r
= f (
F
T
T
)
;
*
S
A
per each diode BAR64-05,-05,-06
mA
T
S
I
F
S
T
A
T
T
A
S
T
T
S
A
Semiconductor Group 2 Edition A01, 23.02.95
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