Siemens BAR64-04W Datasheet
BAR 64 ... W
Semiconductor Group
Sep-04-19981
Silicon PIN Diode
• High voltage current controlled
RF resistor for RF attenuator and switches
• Frequency range above 1 MHz
• Low resistance and short carrier lifetime
• For frequencies up to 3 GHz
1
3
VSO05561
2
BAR 64-04W
BAR 64-05W
BAR 64-06W
Type Marking Ordering Code Pin Configuration Package
BAR 64-04W
BAR 64-05W
BAR 64-06W
PPs
PRs
PSs
Q62702-A1264
Q62702-A1265
Q62702-A1266
1 = A1
1 = A1
1 = C1
2 = C2
2 = C2
2 = C2
SOT-3233=C1/A2
3 = C1/2
3 = A1/2
Maximum Ratings
Parameter Symbol UnitValue
V
V
R
200Diode reverse voltage
Forward current
I
F
100 mA
mW
Total power dissipation,
T
S
≤ 115 °C
P
tot
250
T
j
150 °CJunction temperature
- 55 ...+150Operating temperature range
T
op
Storage temperature
T
st
g
- 55 ...+150
Thermal Resistance
R
thJA
≤ 300
Junction - ambient
1)
K/W
R
thJS
≤ 140
Junction - soldering point
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group 1 1998-11-01
BAR 64 ... W
Semiconductor Group
Sep-04-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter ValuesSymbol Unit
max.typ.min.
DC characteristics
Breakdown voltage
I
(BR)
= 5 µA
- V-200
V
(BR)
- - 50
I
R
Reverse current
V
R
= 20 V
µA
Forward voltage
I
F
= 50 mA
V
F
- 1.1 mV-
AC characteristics
Diode capacitance
V
R
= 20 V, f = 1 MHz
-
C
T
0.23 pF0.35
Forward resistance
I
F
= 1 mA, f = 100 MHz
I
F
= 10 mA, f = 100 MHz
I
F
= 100 mA, f = 100 MHz
Ω
20
2.8
1.35
r
f
12.5
2.1
0.85
-
-
-
Charge carrier life time
I
F
= 10 mA,
I
R
= 6 mA,
I
R
= 3 mA
- - µs1.55
τ
rr
-Series inductance -
L
s
nH1.2
Semiconductor Group 2 1998-11-01
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