Siemens BAR64-03W Datasheet
j
Silicon PIN Diode
l
High voltage current controlled
RF resistor for RF attenuator and swirches
l
Freqency range above 1 MHz
l
Low resistance and short carrier lifetime
l
For frequencies up to 3 GHz
BAR 64-03W
Type Marking Ordering Code
(tape and reel)
Pin Configuration
1 2
Package
BAR 64-03W 2 Q62702-A1045 C A SOD-323
Maximum Ratings per Diode
Parameter Symbol BAR 64-03W Unit
Reverse voltage
Forward current
Total Power dissipation TS ≤ 25°C
Junction temperature
Operating temperature range
Storage temperature range
V
R 200 V
I
F
P
tot
T
T
op
T
stg
100 mA
250 mW
150 °C
-55 +150°C °C
-55...+150°C °C
Thermal Resistance
Junction-ambient
1)
R
th JA
≤ 450 K/W
1)
_________________________
1)Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group 1 Edition A01, 22.07.94
BAR 64-03W
Electrical Characteristics
at
T
= 25 °C, unless otherwise specified.
A
Parameter Symbol Value Unit
min. typ. max.
DC Characteristics per Diode
Breakdown voltage
I
= 5 µA
R
Forward voltage
I
= 50 mA
F
Diode capacitance
V
= 20 V, f = 1 MHz
R
Forward resistance
I
= 1 mA, f = 100 MHz
F
I
= 10 mA, f = 100 MHz
F
I
= 100 mA, f = 100 MHz
F
Charge carrier lifetime
I
= 10 mA,
F
I
= 6 mA,
R
Series inductance
I
= 3 mA
R
V
V
C
r
τ
L
f
L
s
(BR)
F
T
200 - -
- - 1.1
- 0.23 0.35
-
--
12.5
2.1
0.85
20
3.8
1.35
- 1.55 -
- 2.0 -
V
V
pF
Ω
µs
nH
Semiconductor Group 2 Edition A01, 22.07.94
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