Siemens BAR64-02W Datasheet
BAR 64-02W
Semiconductor Group
Sep-07-19981
Silicon PIN Diode
• High voltage current controlled
RF resistor for RF attenuator and switches
• Frequency range above 1 MHz
• Low resistance and short carrier lifetime
• Very low inductance
• For frequencies up to 3 GHz
• Extremely small plastic SMD package
1
VES05991
2
Type Marking Ordering Code Pin Configuration Package
BAR 64-02W M Q62702-A1215 1 = C 2 = A SCD-80
Maximum Ratings
Parameter Symbol UnitValue
Diode reverse voltage
V
R
V200
100Forward current mA
I
F
Total power dissipation,
T
S
≤ 125°C
P
tot
mW250
Junction temperature
T
j
°C150
Operating temperature range
T
op
- 55 ...+150 °C
Storage temperature
T
st
g
- 55 ...+150
Thermal Resistance
Junction - ambient
1)
R
thJA
≤ 220
K/W
Junction - soldering point
R
thJS
≤ 140
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group 1 1998-11-01
BAR 64-02W
Semiconductor Group
Sep-07-19982
Electrical Characteristics at
T
A
= 25 °C, unless otherwise specified.
Parameter Symbol UnitValues
typ. max.min.
Characteristics
V
(BR)
200Breakdown voltage
I
(BR)
= 5 µA
- - V
Forward voltage
I
F
= 50 mA
V
F
- - 1.1 mV
AC characteristics
- 0.23Diode capacitance
V
R
= 20 V, f = 1 MHz
C
T
pF0.35
-
C
C
0.09 -Case capacitance
f
= 1 MHz
-
-
-
Forward resistance
I
F
= 1 mA, f = 100 MHz
I
F
= 10 mA, f = 100 MHz
I
F
= 100 mA, f = 100 MHz
r
f
12.5
2.1
0.85
20
3.8
1.35
Ω
Charge carrier life time
I
F
= 10 mA,
I
R
= 6 mA,
I
R
= 3 mA
τ
rr
- 1.55 - µs
Series inductance
L
s
- 0.6 - nH
Semiconductor Group 2 1998-11-01
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