Siemens BAR63-06W, BAR63-05W, BAR63-04W Datasheet
BAR 63 ... W
Semiconductor Group
Sep-07-19981
Silicon PIN Diode
• PIN diode for high speed
switching of RF signal
• Low forward resistance
• Very low capacitance
• For frequencies up to 3 GHz
1
3
VSO05561
2
BAR 63-04W
BAR 63-05W
BAR 63-06W
Marking Ordering Code Pin Configuration PackageType
3=C1/A2
3 = C1/2
3 = A1/2
SOT-3232 = C2
2 = A2
2 = C2
BAR 63-04W
BAR 63-05W
BAR 63-06W
Q62702-A1261
Q62702-A1267
Q62702-A1268
1 = A1
1 = A1
1 = C1
G4s
G5s
G6s
Maximum Ratings
UnitParameter Symbol Value
Diode reverse voltage
V
R
V50
100 mA
I
F
Forward current
Total power dissipation,
T
S
≤ 105 °C
P
tot
mW250
150Junction temperature
T
j
°C
T
op
Operating temperature range - 55 ...+150
Storage temperature
T
st
g
- 55 ...+150
Thermal Resistance
K/W
R
thJA
≤ 340
Junction - ambient
1)
Junction - soldering point
R
thJS
≤ 180
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group 1 1998-11-01
BAR 63 ... W
Semiconductor Group
Sep-07-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
UnitParameter ValuesSymbol
min. max.typ.
DC characteristics
-50
V
(BR)
Breakdown voltage
I
(BR)
= 5 µA
V-
50Reverse current
V
R
= 20 V
I
R
µA--
1.2Forward voltage
I
F
= 100 mA
-
V
F
mV0.95
AC characteristics
-
0.3
pF
0.3
0.21
C
T
-
-
Diode capacitance
V
R
= 0 V, f = 100 MHz
V
R
= 5 V, f = 1 MHz
2
-
Ω
1.2
1
Forward resistance
I
F
= 5 mA, f = 100 MHz
I
F
= 10 mA, f = 100 MHz
-
-
r
f
-Charge carrier life time
I
F
= 10 mA,
I
R
= 6 mA,
I
R
= 3 mA
τ
rr
µs75-
-Series inductance -
L
s
nH1.4
Semiconductor Group 2 1998-11-01
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