Siemens BAR60, BAR61 Schematic [ru]
Silicon PIN Diodes BAR 60
BAR 61
● RF switch
● RF attenuator for frequencies above 10 MHz
Type Ordering Code
Marking
Pin Configuration
Package
(tape and reel)
BAR 60 Q62702-A78660 SOT-143
BAR 61 Q62702-A12061
Maximum Ratings per Diode
Parameter Symbol Values Unit
Reverse voltage V
R 100 V
1)
Forward current I
Total power dissipation, TS ≤ 65 ˚C
2)
Junction temperature
Storage temperature range
Operating temperature range
F 140 mA
Ptot 250 mW
j 150 ˚C
T
Tstg – 55 … + 150
op – 55 … + 150
T
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 580 K/W
Junction - soldering point Rth JS ≤ 340
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm× 16.7 mm × 0.7 mm.
Semiconductor Group 1
07.94
Electrical Characteristics per Diode
I
I
A = 25 ˚C, unless otherwise specified.
at T
BAR 60
BAR 60
BAR 61
Parameter Symbol
DC/AC Characteristics
Reverse current
R = 50 V
V
R = 100 V
V
F = 100 mA
R = 50 V, f = 1 MHz
V
R = 0, f = 100 MHz
V
R = 0, f = 100 MHz
V
F = 10 mA, IR = 6 mA
f = 100 MHz, I
F = 0.01 mA
F = 0.1 mA
I
F = 1.0 mA
I
F = 10 mA
I
R
I
V
F – – 1.25
T
C
g
p –50–
τL
r
f
min. typ. max.
–
–
–
–
–
–
0.25
0.2
100
1
0.5
–
–1–
–
–
–
–
2800
380
45
7
–
–
–
–
UnitValues
nA
µA
VForward voltage
pFDiode capacitance
µSZero bias conductance
µsCharge carrier life time
ΩDifferential forward resistance
Semiconductor Group 2
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