Siemens BAR17 Datasheet

Silicon PIN Diode BAR 17
RF switch
RF attenuator for frequencies above 1 MHz
Low distortion factor
Long-term stability of electrical characteristics
Type Ordering Code
Marking
Package
(tape and reel)
BAR 17 Q62702-A858L6 SOT-23
Maximum Ratings Parameter Symbol Values Unit
Reverse voltage V Forward current I Total power dissipation, TS 95 ˚C
2)
Junction temperature Storage temperature range Operating temperature range
R 100 V
F 140 mA
Ptot 250 mW
j 150 ˚C
T Tstg – 55 … + 150
op – 55 … + 150
T
Thermal Resistance
Junction - ambient
2)
Rth JA 295 K/W
1)
Junction - soldering point Rth JS 215
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm× 16.7 mm × 0.7 mm.
Semiconductor Group 1
07.94
Electrical Characteristics
I
I
A = 25 ˚C, unless otherwise specified.
at T
BAR 17
BAR 17
Parameter Symbol
Reverse current
R = 50 V
V
R = 100 V
V
F = 100 mA
R = 50 V, f = 1 MHz
V
R = 0, f = 100 MHz
V
F = 10 mA, IR = 6 mA
f = 100 MHz, I
F = 0.01 mA F = 0.1 mA
I
F = 1.0 mA
I
F = 10 mA
I
R
I
V
F 0.91 1
T
C
τL
r
f
min. typ. max.
– –
– –
– –
0.32
0.37
50 1
0.55 –
–4–
– – – –
1150 160 23
3.5
– – – –
UnitValues
nA
µA
VForward voltage
pFDiode capacitance
µsCharge carrier life time
Forward resistance
Semiconductor Group 2
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