Siemens BAR16-1, BAR15-1, BAR14-1 Datasheet

Silicon PIN Diodes BAR 14-1

… BAR 16-1

● RF switch

● RF attenuator for frequencies above 10 MHz

● Low distortion factor

● Long-term stability of electrical characteristics

Type Ordering Code

Marking

Pin Configuration

Package

(tape and reel)

BAR 14-1 Q62702-A772L7 SOT-23

BAR 15-1 Q62702-A731L8

BAR 16-1 Q62702-A773L9

Maximum Ratings per Diode
Parameter Symbol Values Unit

Reverse voltage V
Forward current I

R 100 V

F 140 mA

1)

Total power dissipation, TS ≤ 65 ˚C
Junction temperature
Storage temperature range
Operating temperature range

2)

Ptot 250 mW

j 150 ˚C

T
Tstg – 55 … + 150

op – 55 … + 150

T

Thermal Resistance

Junction - ambient

2)

Rth JA ≤ 500 K/W

Junction - soldering point Rth JS ≤ 340

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on alumina 15 mm× 16.7 mm × 0.7 mm.

Semiconductor Group 1

07.94

Electrical Characteristics per Diode

I

I

A = 25 ˚C, unless otherwise specified.

at T

BAR 14-1

BAR 14-1

… BAR 16-1

min. typ. max.

UnitValuesParameter Symbol

Reverse current

R = 50 V

V

R = 100 V

V

F = 100 mA

R = 50 V, f = 1 MHz

V

R = 0, f = 100 MHz

V

f = 100 MHz, I

R = 0, f = 100 MHz

V

F = 10 mA, IR = 6 mA

F = 0.01 mA
F = 0.10 mA

I

F = 1 mA

I

F = 10 mA

I

R

I

–
–

V

F – 1.05

T

C

–
–

r

f

–
–
–
–

g

p –50–

τL

0.7 1 –

–
–

0.25

0.2

2800
380
45
7

100
1

0.5
–

–
–
–
–

nA

µA

VForward voltage

pFDiode capacitance

ΩForward resistance

µSZero bias conductance

µsCharge carrier life time

Semiconductor Group 2