Long Creepage Distance
PC905
Photocoupler with Built-in
Voltage Detection Circuit
)
❈ Lead forming type (I type) is also available. (PC905I
..
❈❈ TUV (DIN-VDE0884) approved type is also available as an option.
■ Features
1. Built-in voltage deviation detection circuit
2. Long creepage distance type
(Creepage distance : 8mm or more
)
3. Conforms to European Safety Standard
(Internal insulation distance : 0.5mm or
)
more
4. High collector-emitter voltage (V
CEO
: 70V
)
5. High isolation voltage between input and
output (V
: 5 000V
iso rms
)
6. Recognized by UL, file No. E64380
Approved by BSI(BS415 : No. 6990, BS7002 : No. 7567
Approved by SEMKO No. 963501101
Approved by DEMKO No. 392592
■ Applications
1. Switching power supplies
■ Outline Dimensions
)
1.2
0.85
± 0.5
± 0.5
3.5
± 0.3
± 0.3
8
6.5
6
PC905
1234
Anode mark
± 0.5
9.66
± 0.1
0.5
1 Anode
2 Cathode
3 GND
4 Reference
57
2.54
Internal
connection diagram
± 0.5
3.05
± 0.25
5 NC
6 Emitter
7 Collector
8 NC
8
1
234
7.62
± 0.1
0.26
10.16
PC905
(
Unit : mm
567
± 0.3
± 0.5
)
■ Absolute Maximum Ratings
Parameter
Anode current I
Input
Anode voltage V
Reference input current I
(
Ta= 25˚C
Symbol Rating Unit
A
A
REF
50 mA
30 V
10 mA
)
Power dissipation P 250 mW
Collector-emitter voltage V
Output
Emitter-collector voltage V
Collector current I
Collector power dissipation P
Total power dissipation P
*1
Isolation voltage V
Operating temperature T
Storage temperature T
*2
Soldering temperature T
*1 40 to 60%RH, AC for 1 minute
*2 For 10 seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. ”
CEO
ECO
C
C
tot
iso
opr
stg
sol
70 V
6V
50 mA
150 mW
350 mW
5 000
V
rms
- 25 to + 85 ˚C
- 40 to + 125 ˚C
260 ˚C
PC905
■ Electro-optical Characteristics
Parameter Symbol Conditions MIN. TYP. MAX. Unit Fig.
Reference voltage V
Temperature change in
*3
reference voltage
Voltage variation ratio
in reference voltage
Input
Output Collector dark current I
Transfer
charac-
teristics
*3 V
REF
*4 I
REF
*5 CTR= IC/ IAx 100(%
Reference input current I
Temperature change in
*4
reference input current
Minimum drive current I
OFF-state anode current V
Anode-cathode forward
voltage
*5
Current transfer ratio CTR
Collector-emitter
saturation voltage
Isolation resistance R
Floating capacitance C
(
dev)=V
(
dev)=I
REF(MAX.
REF(MAX.
)
)
-I
)
-V
REF(MIN.
REF(MIN.
)
)
V
∆V
I
REF
REF
REF
V
CE
REF
(
)
dev
/∆V
REF
(
)
dev
MIN
I
OFF
V
F
CEO
(
)
sat
ISO
f
(
Ta= 25˚C unless otherwise specified.
VK=V
V
Ta= - 25 to + 85˚C
IA= 10mA, ∆ VA= 30V- V
A
, IA= 10mA 2.40 2.495 2.60 V 1
REF
, IA= 10mA,
K=VREF
REF
- 8 40 mV 1
- - 1.4 - 5 mV/V 2
IA= 10mA, R3= 10kΩ -210µA3
= 10mA, R3= 10kΩ,
I
A
Ta= - 25 to + 85˚C
VK=V
REF
= 30V, V
A
VK=V
REF
= GND
REF
, IA= 10mA - 1.2 1.4 V 1
VCE= 20V - 10
VK=V
, IA= 10mA, VCE=5V
REF
K=VREF
= 1mA
, IA= 20mA,
V
I
C
40 to 60%RH, DC500V
V= 0, f= 1MHz
- 0.4 3 µ A3
-12mA1
- 0.1 2 µ A4
-9
-7
10
A5
40 - 320 % 6
- 0.1 0.2 V 6
5x10101x10
11
- Ω
- 0.6 1.0 pF -
)
-
■ Test Circuit
Fig. 1
I
A
A
V
K
V
CC
V
VK: Voltage between terminals and
: Voltage between terminals and
V
REF
Fig. 2
I
1
V
F
V
2
4
V
REF
3
23
34
7
6
A
1
R
V
1
CC
V
2
A
4
R
2
V
REF
3
7
6