GP1S27
GP1S27
Subminiature Photointerrupter
■ Features
1. Ultra-compact
2. PWB mounting type package
3. Current transfer ratio
(CTR : MIN. 4.3%
)
■ Applications
1. Cameras
2. Floppy disk drives
■ Outline Dimensions
MAX.
3.9
Center of
light path
0.91.5
)
2.5
1.0
(
❈
2.54
41
3
4.0
(
)
C0.3
Rest of gate
4 - 0.15
* Tolerance:± 0.2mm
* Burr's dimensions: 0.15MAX.
* Rest of gate : 0.3MAX.
* ( ): Reference dimensions
2
*
The dimensions indicated by ❈ refer
to those measured from the lead base.
(
Unit : mm
Internal connection diagram
3
4
4.0
(
)
C0.8
)
0.3
±
Light path
4.0
(
(2)
4 - 0.4
❈
2.54
1 Anode
2 Cathode
3 Emitter
4 Collector
2
1
(
)
0.8
Slit width
5.1
MIN.
4.0
)
■ Absolute Maximum Ratings
(
Ta = 25˚C
)
Parameter Symbol Rating Unit
Input
Forward current I
Reverse voltage V
F
R
50 mA
6V
Power dissipation P 75 mW
Collector-emitter voltage V
Output
Emitter-collector voltage V
Collector current I
Collector power dissipation P
Total power dissipation P
Operating temperature T
Storage temperature T
*1
Soldering temperature
*1 For 5 seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
CEO
ECO
C
C
tot
opr
stg
T
sol
35 V
6V
20 mA
75 mW
100 mW
- 25 to + 85 ˚C
- 40 to + 100 ˚C
260 ˚C
Soldering area
1mm or more
GP1S27
■ Electro-optical Characteristics
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Input
Output Collector dark current I
Transfer
characteristics
Fig. 1 Forward Current vs. Ambient
Temperature
)
mA
(
Forward current I
Forward voltage V
Reverse current I
Collector Current Ic
Collector-emitter saturation voltage
Response time
60
50
40
F
30
20
10
Rise time t
Fall time t
(
Ta = 25˚C
F
R
CEO
V
CE(sat
r
f
IF= 20mA - 1.2 1.4 V
VR=3V - - 10 µA
VCE= 20V - -
= 1.5mA, VCE= 5V 65 - 200 µ A
I
F
)
IF= 3mA, IC=30µA - - 0.4 V
VCE= 5V, RL=1kΩ
= 100 µ A
I
C
- 50 150 µs
- 50 150 µs
1x10
-
7
)
A
Fig. 2 Power Dissipation vs.
Ambient Temperature
120
P
P, P
tot
c
100
)
80
mW
(
60
40
Power dissipation P
20
0
- 25 0 25 50 75 100
Ambient temperature Ta (˚C
85
)
Fig. 3 Forward Current vs. Forward Voltage
500
T
= 75˚C
200
100
)
mA
(
F
Forward current I
a
50˚C
50
20
10
5
2
1
0 0.5 1 1.5 2
Forward voltage VF (V
25˚C
0˚C
- 25˚C
2.5 3
)
3.5
0
- 25 0 25 50 75 100
Ambient temperature Ta (˚C
85
)
Fig. 4 Collector Current vs. Forward Current
1.8
VCE=5V
1.6
1.4
)
mA
(
1.2
C
1.0
0.8
0.6
Collector current I
0.4
0.2
= 25˚C
T
a
0
02
Forward current IF (mA
10468
)
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