Datasheet X0202MA1BA2, X0205NA2BL2, X0205NA1BA2, X0205MN5BA4, X0205MA2BL2 Datasheet (SGS Thomson Microelectronics)

...
®
X02 Ser ies
SENSITIVE 1.25A SCRs
MAIN FEATURES:
Symbol Value Unit
I
T(RMS)
V
DRM/VRRM
I
GT
1.25 A
600 and 800 V
50 to 200 µA
Thanks to highly sensitive triggering levels, the X02 SCR series is suitable for all applications where the available gate current is limited, such as ground fault circuit interruptors, overvoltage crowbar protection in low power supplies, capacitive ignition circuits, ... Available in though-hole or surface-mount packages, these devices a re opt imized in forward voltage drop and inrush current capabilities, for reduced power los ses and high reliability in harsh environments.
TO-92
(X02xxA)
A
G
K
SOT-223
(X02xxN)
ABSOLUTE RATINGS (lim iting values)
Symbol Parameter Value Unit
I
T(RMS)
IT
(AV)
I
TSM
²
I
dI/dt
I
GM
P
G(AV)
T
stg
Tj
RMS on-state current (180° conduction angle)
Average on-state current (180° conduction angle)
Non repetitive surge peak on-state current
tI
²
t Value for fusing
Critical rate of rise of on-state current
= 2 x IGT , tr 100 ns
I
G
Peak gate current tp = 20 µs Tj = 125°C 1.2 A Average gate power dissipation Tj = 125°C 0.2 W
Storage junction temperature range Operating junction temp erature range
September 2000 - Ed: 3
TO-92 TI = 55°C
SOT-223 Ttab = 95°C
1.25 A
TO-92 TI = 55°C
0.8 A
SOT-223 Ttab = 95°C
tp = 8.3 ms
Tj = 25°C
25
tp = 10 ms 22.5 tp = 10 ms Tj = 25°C 2.5
F = 60 Hz Tj = 125°C 50 A/µs
- 40 to + 150
- 40 to + 125
A
2
S
A
°C
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X02 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol Test Conditions
X02xx
02 05
I
GT
VD = 12 V RL = 140
V
GT
V V
dV/dt V
V
V
I
DRM
I
RRM
VD = V
GD
IRG = 10 µA
RG
I
I
H
I
L
TM
to
R
= 50 mA RGK = 1 k
T
IG = 1 mA RGK = 1 k MAX.
= 67 % V
D
ITM = 2.5 A tp = 380 µs Threshold voltage Tj = 125°C MAX. 0.9 V Dynamic resistance Tj = 125°C MAX. 200 m
d
V
DRM
RL = 3.3 k RGK = 1 k
DRM
RGK = 1 k
DRM
= V
RGK = 1 k
RRM
Tj = 125°C MIN.
Tj = 110°C MIN. 10 15 V/µs
Tj = 25°C MAX. 1.45 V
Tj = 25°C MAX. 5
Tj = 125°C 500
MIN. - 20
MAX. 200 50 MAX. 0.8 V
0.1 V
MIN.
8V
MAX. 5 mA
6
THERMAL RESISTANCES
Symbol Parameter Value Unit
R R
R
th(j-l) th(j-t)
th(j-a)
Junction to leads (DC)
TO-92 60
Junction to tab (DC) SOT-223 25 Junction to ambient (DC) TO-92 150
S = 5 cm
²
SOT-223 60
Unit
µA
mA
µA
°C/W
S = Copper surface under tab
PRODUCT SELECTOR
Part Number
600 V 800 V
X0202MA X 200 µA TO-92 X0202MN X 200 µA SOT-223 X0202NA X 200 µA TO-92 X0202NN X 200 µA SOT-223 X0205MA X 50 µA TO-92 X0205MN X 50 µA SOT-223 X0205NA X 50 µA TO-92 X0205NN X 50 µA SOT-223
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Voltage
Sensitivity
Package
X02 Series
ORDERING INFORMATION
X 02 02 M A 1BA2
Blank
SENSITIVE SCR SERIES
CURRENT: 1.25A
SENSITIVITY:
VOLTAGE: M: 600V N: 800V
PACKAGE: A:TO-92 N: SOT-223
PACKING MODE: 1BA2:TO-92 Bulk 2BL2:TO-92 Ammopack 5BA4: SOT-223 Tape & Reel
02: 200µA 05: 50µA
OTHER INFORMATION
Part Number Marking Weight Base Quantity Packing mode
X02xxyA 1BA2 X02xxyA 0.2 g 2500 Bulk X02xxyA 2BL2 X02xxyA 0.2 g 2000 A mmop ack X0202yN 5BA4 X2y 0.12 g 1000 Tape & reel X0205yN 5BA4 X5y 0.12 g 1000 Tape & reel
Note: xx = sensitivity, y = voltage
Fig. 1: Maximum average power dissipation
versus average on-state current.
P(W)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
IT(av)(A)
Fig. 2-1: Average and D.C. on-state current versus lead temperature (SOT-223/TO-92).
IT(av)(A)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0 02550
SOT-223
TO-92
TO-92
Tlead orTlab(°C)
75
SOT-223
100 125
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X02 Series
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature (device mounted o n FR4 with recommended pad layout) (SOT-223/ TO-92).
IT(av)(A)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0 02550
SOT-223
TO-92
SOT-223
TO-92
Tamb(°C)
75
100 125
Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values).
IGT,IH, IL[Tj]/IGT, IH, IL[Tj] = 25°C]
1.50
1.25
1.00
0.75
0.50
0.25
0.00
-40 -20 0 20 40 60 80 100 120 140
Tj(°C)
Fig. 3: Relative variation of thermal impedance junction to ambient versus pulse duration (SOT-223/TO-92).
K = [Zth(j-a)/Rth(j-a)]
1.00
TO-92
0.10
0.01 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
SOT-223
tp(s)
Fig. 5: Relative variation of holding current versus gate-cathode resistance (typical values).
IH[Rgk] / IH[Rgk = 1 k]
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0 1E-2 1E-1 1E+0 1E+1
Rgk(k)
Tj = 25°C
Fig. 6: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values).
dV/dt[Rgk]/dV/dt
10.0
1.0
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
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[
Rgk=1k]
Rgk(k)
Tj = 125°C
VD = 0.67xVDRM
Fig. 7: Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values).
dV/dt[Cgk] / dV/dt[Rgk = 1k ]
20 18 16 14 12 10
8 6 4 2 0
0
24
6810
Cgk(nF)
12 14
16 18 20
22
X02 Series
Fig. 8: Surge peak on-state current versus
number of cycles.
ITSM(A)
25
20
Nonrepetitive
15
10
5
0
1 10 100 1000
Repetitive
Tamb=25°C
Tjinitial=25°C
tp=10ms
Onecycle
Number of cycles
Fig. 10: On-state characteristics (maximum values).
ITM(A)
3E+1
1E+1
1E+0
1E-1
VTM(V)
2.0 2.5 3.0 3.5 4.0 4.51.51.00.5
Fig. 9: Non-repetitive surge peak on-state current for a sinusoidal pulse with width
tp < 10 ms, and corresponding value of I²t.
ITSM(A), I t(A S)
300
100
10
1
22
tp(ms)
1.00 10.000.100.01
Fig. 11: Thermal resistance junct ion to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35 µm) (SOT-223).
Rth(j-a) (°C/W)
130 120 110 100
90 80 70
60
50
40 30
20 10
0
S(cm )
2
4.0 4.5 5.03.53.02.52.01.51.00.50.0
PACKAGE MECHANICAL DATA
TO-92 (Plastic)
BAC
F
D
DIMENSIONS
REF .
a
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 1.35 0.053 B 4.70 0.185 C 2.54 0.100 D 4.40 0.173
E
E 12.70 0.500 F 3.70 0.146 a 0.50 0.019
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X02 Series
PACKAGE MECHANICAL DATA
SOT-223 (Plastic)
A
A1
B
e1
D
B1
H
E
e
V
DIMENSIONS
c
REF.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 1.80 0.071
A1 0.02 0.1 0.0008 0.004
B 0.60 0.70 0.85 0.024 0.027 0.034
B1 2.90 3.00 3.15 0.114 0.118 0.124
c 0.24 0.26 0.35 0.009 0.010 0.014
D 6.30 6.50 6.70 0.248 0.256 0.264
e 2.3 0.090
e1 4.6 0.181
E 3.30 3.50 3.70 0.130 0.138 0.146
H 6.70 7.00 7.30 0.264 0.276 0.287
V 10° max
FOOTPRINT DIMENSIONS (in millimete r s ) SOT-223 (Plastic)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of su ch in form at io n n or fo r a ny in fr ing eme nt of pa te nts or o ther r igh ts of th ir d pa r tie s w hic h may res ul t f rom i ts us e. No license is granted by impl i cation or ot herwise under any patent or patent r i ght s of STMi croelectr oni cs. Specif i cations mentioned i n this publ i cation are subject to change without noti ce. This public ation supersedes and replaces all inform ation previ ously suppli ed. STMicroel ectronic s products are not authori zed for use as critical com ponents in li fe support devices or syst ems withou t ex press written approval of STMicroelectronics.
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