SGS Thomson Microelectronics TN1625-800G, TN1625-600G Datasheet
FEATURES
TN1625-G
SCR
HIGHSUR GECAPAB ILITY
A
HIGHON-STATECURRENT
HIGHSTABILITYAND RELIABILITY
DESCRIPTION
A
G
The TN1625series ofSilicon ControlledRectifiers
uses a high performance glass passivated tech-
K
nology.
This SCR is designed for power supplies up to
400Hzonresistiveor inductiveload.
D
2
PAK
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
I
T(RMS)
RMSon-statecurrent
Tc=110°C16 A
(180°conductionangle)
I
T(AV)
Averageon-statecurrent
Tc=110°C10 A
(180°conductionangle)
I
TSM
2
tI
I
Nonrepetitive surgepeak on-statecurrent tp= 8.3 ms 199 A
(Tjinitial = 25°C)
2
t Valuefor fusing tp = 10ms 180 A2s
tp= 10 ms 190
dI/dt Criticalrate of riseof on-statecurrent
I
=100 mA dIG/dt =1 A/µs.
G
T
stg
T
j
Storagejunctiontemperaturerange
Operatingjunctiontemperaturerange
100 A/µs
- 40to+ 150
- 40to+ 125
Tl Maximumtemperaturefor solderingduring 10 s 260 °C
TN1625-
Symbol Parameter
600G 800G
V
DRM
V
RRM
January 1998- Ed: 4
Repetitivepeak off-statevoltage
Tj = 125°C
600 800 V
°C
Unit
1/5
TN1625-G
THERMALRESISTANCES
Symbol Parameter Value Unit
2
Rth(j-a) Junctionto ambient(S=1cm
Rth(j-c) Junctionto case forD.C 1.1 °C/W
GATECHARACTERISTICS
P
=1W PGM=10 W (tp =20µs) IGM= 4 A(tp = 20µs) V
G (AV)
ELECTRICALCHARACTERISTICS
Symbol TestConditions Type Value Unit
)45
=5V
RGM
°
C/W
I
GT
V
GT
V
GD
I
H
I
L
V
TM
I
DRM
I
RRM
dV/dt V
VD=12V (DC) RL=33
Ω
Tj=25°C MIN 3 mA
MAX 25
VD=12V (DC) RL=33Ω
VD=V
DRMRL
=3.3kΩ Tj= 125°C MIN 0.2 V
Tj=25°C MAX 1.3 V
IT= 100mA Gateopen Tj=25°C MAX 40 mA
IG=1.2 I
GT
Tj=25°C MAX 60 mA
ITM= 32A tp=380µs Tj=25°C MAX 1.5 V
VD=V
VR=V
=67%V
D
DRM
RRM
Gateopen Tj=125°C MIN 500 V/µs
DRM
Tj=25°C MAX 5 µA
Tj= 125°C MAX 2 mA
ORDERINGINFORMATION
TN 16 25 - 600 G
SCR
CURRENT
2/5
Add”-TR” suffixfor Tape &Reelshipment
SENSITIVITY
PACKAGES:
G: D
VOLTAGE
2
PAK
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