SGS Thomson Microelectronics TN1215-600G, TN1215-800G Datasheet
FEATURES
TN1215-G
SCR
HIGHSUR GECAPAB ILITY
A
HIGHON-STATECURRENT
HIGHSTABILITYAND RELIABILITY
DESCRIPTION
A
G
The TN1215series ofSilicon ControlledRectifiers
uses a high performance glass passivated tech-
K
nology.
This SCR is designed for power supplies up to
400Hzonresistiveor inductiveload.
D
2
PAK
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
I
T(RMS)
RMSon-statecurrent
Tc=110°C12 A
(180°conductionangle)
I
T(AV)
Averageon-statecurrent
Tc= 110°C8 A
(180°conductionangle)
I
TSM
Nonrepetitive surgepeak on-statecurrent tp= 8.3 ms 146 A
(Tjinitial = 25°C) tp= 10 ms 140
2
tI
I
2
t Valuefor fusing tp = 10ms 98 A2s
dI/dt Criticalrate of riseof on-statecurrent
=100 mA dIG/dt =1 A/µs.
I
G
T
stg
T
j
Storagejunctiontemperaturerange
Operatingjunctiontemperaturerange
Tl Maximumtemperaturefor solderingduring 10s 260
Symbol Parameter
V
DRM
V
RRM
January 1998- Ed: 4
Repetitivepeak off-statevoltage
Tj =125°C
100 A/µs
- 40to+ 150
- 40to+ 125
TN1215-
600G 800G
600 800 V
°
C
°
C
Unit
1/5
TN1215-G
THERMALRESISTANCES
Symbol Parameter Value Unit
2
Rth(j-a) Junctionto ambient(S=1cm
Rth(j-c) Junctionto case forD.C 1.3 °C/W
GATECHARACTERISTICS
P
=1W PGM=10 W (tp =20µs) IGM= 4 A(tp = 20µs) V
G (AV)
ELECTRICALCHARACTERISTICS
Symbol TestConditions Type Value Unit
)45
=5V
RGM
°
C/W
I
GT
V
GT
V
GD
I
H
I
L
V
TM
I
DRM
I
RRM
dV/dt V
VD=12V (DC) RL=33Ω Tj= 25°C MIN 2 mA
MAX 15
VD=12V (DC) RL=33
VD=V
DRMRL
=3.3kΩ Tj=125°C MIN 0.2 V
IT= 100mA Gateopen
IG=1.2 I
GT
Ω
Tj= 25°C MAX 1.3 V
Tj= 25°C MAX 30 mA
Tj= 25°C MAX 60 mA
ITM= 24A tp=380µs Tj= 25°C MAX 1.5 V
VD=V
VR=V
=67%V
D
DRM
RRM
Gateopen Tj=125°C MIN 200 V/µs
DRM
Tj= 25°C MAX 5 µA
Tj=125°C MAX 3 mA
ORDERINGINFORMATION
TN 12 15 - 600 G
SCR
CURRENT
2/5
Add”-TR” suffixfor Tape &Reelshipment
SENSITIVITY
PACKAGES:
G: D
VOLTAGE
2
PAK
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