SGS Thomson Microelectronics TIP32B, TIP32C, TIP32A, TIP31C, TIP31A Datasheet

TIP31A/31C



COMPLEMENTARY SILICON POWER

APPLICATION

■ LINEARAND SWITCHING INDUSTRIAL

EQUIPMENT

DESCRIPTION

The TIP31A and TIP31C are silicon
Epitaxial-Base NPN transistors mounted in
Jedec TO-220 plastic package. They are intented
for use in medium power linear and switching
applications.

The complementary PNP types are TIP32A and
TIP32Crespectively.

AlsoTIP32B is a PNPtype.

TIP32A/32B/32C

TRANSISTORS

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

NPN TIP 31A TIP31C
PNP TIP32A TIP32B TIP32C

V
V
V

I

P

T

For PNP types voltage and current values are negative

Collec t or -Base Volt age ( IE= 0) 60 80 100 V

CBO

Collec t or -Emitt er Vol ta ge ( IB= 0) 60 80 100 V

CEO

Emitter-Base Voltage (IC=0) 5 V

EBO

Collector Current 3 A

I

C

Collector Peak Current 5 A

CM

Base Cu rrent 1 A

I

B

Tot al Dissipation at T

tot

St orage Temperature -65 t o 150

stg

Max. O perating J unc t ion Tem perature 150

T

j

T

case
amb

≤ 25oC

o

25

≤

C

40

2

W
W

o

C

o

C

October 1999

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TIP31A/TIP31C/TIP32A/TIP32B/TIP32C

THERMAL DATA

R

thj-case

R

thj-amb

Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambie nt Max

3.12

62.5

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS

=25oC unlessotherwisespecified)

(T

case

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

CEO

I

CES

I

EBO

V

CEO(sus )

V

CE(sat)

Collect o r Cut- off
Current (I

B

=0)

Collect o r Cut- off
Current (V

BE

=0)

Emitter Cut-off Current

=0)

(I

C

∗ Collector-Emitter

Sust aining Voltage

=0)

(I

B

Collector-Emitter

∗

for TIP3 1A/32A V
for TIP3 1C/32B/3 2C V

for TIP3 1A/32A V
for TIP/32B V

TI P3 1C/32C

for
V

=5V 1 mA

EB

I

=30mA

C

for TIP31A/32A
for TIP32B
for TIP31C/32C

I

=3A IB=375mA 1.2 V

C

CE
CE

CE
CE

V

CE

=30V
=60V

=60V
=80V
=100V

60
80

100

0.3

0.3

0.2

0.2

0.2

Sat urat ion Voltage

∗ Bas e-E mi t t er Volt age IC=3A VCE=4V 1.8 V

V

BE(on)

h

∗ DC Cu r rent Gain IC=1A VCE=4V

FE

h

Small Si gnall C urrent

fe

Gain

∗

Pulsed : pulse duration= 300 µs, duty cycle ≤ 2%

For PNP types voltage and current values are negative.

=3A VCE=4V

I

C

IC=0.5A VCE=10V f=1KHz
I

=0.5A VCE=10V f=1MHz

C

25
10 50

20

3

mA
mA

mA
mA
mA

V
V
V

SafeOperating Area DeratingCurves

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