SGS Thomson Microelectronics STPR620CT, STPR620CF Datasheet
ULTRA FAST RECOVERY RECTIFIERDIODES
FEATURES
SUITEDFOR SMPS
LOW LOSSES
LOW FORWARD AND REVERSERECOVERY
TIME
HIGHSURGECURRENTCAPABILITY
HIGHAVALANCHEENERGYCAPABILITY
STPR620CT
STPR620CF
A1
K
A2
A2
K
DESCRIPTION
A1
Low cost dual center tap rectifiersuitedfor switchmode powersupply and high frequency DC to DC
converters.
TO220AB
(Plastic)
ISOWATT220AB
(Plastic)
Packagedin TO220AB and ISOWATT220AB,this
deviceis intended for usein low voltage,high fre-
STPR620CT
STPR620CF
quency inverters, free wheeling and polarity protectionapplications.
ABSOLUTE MAXIMUM (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
Repetitivepeakreversevoltage 200 V
RMSforwardcurrent
Averageforward
Perdiode
TO220AB Tc=125°C Per diode
10 A
3A
current
6
30 A
I
FSM
δ =0.5
ISOWATT220AB Tc=120°C Per device
Surgenon repetitiveforwardcurrent
tp=10ms
Perdiode
sinusoidal
T
stg
Tj
Storagetemperaturerange
Maximumjunctiontemperature
- 65 to+ 150
- 65 to+ 150
A1
A2
K
°C
°
C
October 1999-Ed:2A
1/6
STPR620CT/STPR620CF
THERMALRESISTANCES
Symbol Parameter Value Unit
R
th (j-c)
Whenthe diodes1 and 2 are used simultaneously:
∆
Tj(diode1) = P(diode1) x Rth(j-c)(Per diode) + P(diode2) x Rth(c)
ELECTRICAL CHARACTERISTICS
STATICCHARACTERISTICS
Symbol TestConditions Min. Typ. Max. Unit
I
*
R
V
F**
Pulse test :
* tp= 5ms, δ <2%
** tp = 380 µs,δ <2%
Junctionto case
TO220AB Perdiode
ISOWATT220AB Perdiode
T
=25°CV
j
T
= 100°C0.6mA
j
Tj= 125°CI
= 125°CI
T
j
T
=25°CI
j
=V
R
RRM
=3 A 0.99 V
F
=6 A 1.20
F
=6 A 1.25
F
6.5
8.5
50
°
C/W
µ
A
RECOVERYCHARACTERISTICS
Symbol TestConditions Min. Typ. Max. Unit
trr T
tfr T
V
FP
=25°CI
j
=25°CI
j
Tj=25°CI
=0.5A
F
I
=1A
R
=1A
F
=1.1 x V
V
FR
=1A tr =10 ns 3 V
F
Irr = 0.25A 30 ns
tr= 10ns 20 ns
F
To evaluatethe conductionlossesuse thefollowingequation:
P = 0.78x I
Fig. 1:
Average forwardpower dissipation versus aver-
age forward current (Per diode).
F(AV)
+0.070x I
F2(RMS)
Fig. 2:
Peak current versus form factor.(Perdiode)
2/6
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