SGS Thomson Microelectronics STPR320F, STPR320D, STPR310F, STPR310D Datasheet
ULTRAFAST RECOVERY RECTIFIER DIODES
.SUITEDFOR SMPS
.LOWLOSSES
.LOWFORWARDAND REVERSE RECOVERY
TIME
.HIGHSURGECURRENTCAPABILITY
.HIGHAVALANCHE ENERGY CAPABILITY
STPR310D/F
STPR320D/F
A
K
DESCRIPTION
Low cost single chip rectifiersuited for switchmode
powersupplyandhighfrequency DCtoDCconverters.
Packaged in TO220AC and ISOWATT220AC, this
deviceis intended for use in low voltage, high frequency inverters, free wheeling andpolarity protection applications.
ABSOL UT E RATING S (limiting values)
Symbol Parameter Value Unit
I
F(RMS)
I
F(AV)
I
FSM
TstgTjStorage and Junction Temperature Range - 65 to +150
RMS ForwardCurrent 10 A
AverageForwardCurrent
δ =0.5
SurgeNon Repetitive Forward Current Tp = 10 ms
TO220AC Tc = 125°C3 A
ISOWATT220AC Tc = 120°C
TO2 20AC
(Plastic)
STPR310D
STPR320D
Sinusoidal
- 65 to +150
ISOWATT220AC
(Plastic)
STPR310F
STPR320F
30 A
K
A
°C
Symbol Parameter STPR Unit
310D
310F
V
RRM
TH ERMA L R ESIST A N CE
Symbol Paramete r Value Unit
Rth (j-c) Junction-case TO220AC 6.5 °C/W
February 1992 Ed: 1
Repetitive PeakReverse Voltage 100 200 V
ISOWATT220AC 8.5
320D
320F
1/6
STPR310D/F / STPR320D/F
ELECTRIC A L CHAR ACT ERI STIC S
STATIC CHARACTERISTICS
Symbol Tests Conditions Min. Typ. Max. Unit
IR*Tj=25°CV
Tj = 100°C 0.5 mA
=V
R
RRM
50 µA
VF** Tj = 125°CI
Tj = 125°CI
Tj = 25°CI
Pulse test : * tp = 5 ms, duty cycle < 2 %
** tp = 380 µs, duty cycle < 2%
= 3 A 0.99 V
F
= 6 A 1.20
F
= 6 A 1.25
F
RECOVERY CHARACTERISTICS
Symbol Tests Conditions Min. Typ. Max. Unit
trr Tj = 25°CI
tfr Tj = 25°CI
V
FP
To evaluate the conduction losses use the following equation:
P = 0.78 x I
Tj = 25°CI
+ 0.070 I
F(AV)
F2(RMS)
= 0.5 A IR= 1A Irr=0.25 A 30 ns
F
= 1 A tr=10 ns VFR= 1.1x V
F
= 1 A tr=10 ns 3 V
F
F
20 ns
age forward current.
2/6
Fig.2 : Peak current versus form factor.Fig.1 : Average forward power dissipation versus aver-
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