SGS Thomson Microelectronics PN2907A, PN2907A-AP Datasheet
®
SMALL SIGNAL PNP TRANSISTOR
Ordering Code Marking Package / Shipment
PN2907A PN2907A TO-92 / Bulk
PN2907A-AP PN2907A TO-92 / Ammopack
■ SILICON EPI TAX IA L PLANAR PN P
TRANSISTOR
■ TO-92 PACKAGE SUITABLE FOR
THROU GH-HOLE PCB ASSEMBLY
■ THE NPN COMPLE M ENT A RY T YP E IS
PN2222A
APPLICATIONS
■ WELL SUITABLE FOR TV AND HOME
APPLIANCE EQUIPMENT
■ SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
PN2907A
PRELIMINARY DATA
TO-92
Bulk
INTER NAL SCH E M ATI C DIAG RA M
TO-92
Ammopack
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
February 2003
Collector-Emitter Voltage (IE = 0) -60 V
CBO
Collector-Emitter Voltage (IB = 0) -60 V
CEO
Emitter-Base Voltage (IC = 0) -5 V
EBO
I
Collector Current -0.6 A
C
Collector Peak Current (tp < 5 ms) -0.8 A
CM
Total Dissipation at T
tot
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
= 25 oC 500 mW
amb
o
C
o
C
1/5
PN2907A
THERMAL DATA
R
R
thj-amb
thj-case
•
Thermal Resistance Junction-Ambient Max
•
Thermal Resistance Junction-Case Max
250
83.3
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEX
I
BEX
I
CBO
V
(BR)CEO
Collector Cut-off
Current (V
= -3 V)
BE
Base Cut-off Current
(V
= -3 V)
BE
Collector Cut-off
Current (I
= 0)
E
∗ Collector-Emitter
= -30 V -50 nA
V
CE
= -30 V -50 nA
V
CE
= -50 V -10 nA
V
CB
I
= -10 mA -60 V
C
Breakdown Voltage
(I
= 0)
B
V
(BR)CBO
Collector-Base
= -10 µA
I
C
-60 V
Breakdown Voltage
(I
= 0)
E
V
(BR)EBO
Emitter-Base
= -10 µA
I
E
-5 V
Breakdown Voltage
(I
= 0)
C
V
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
∗ Collector-Base
BE(sat)
Saturation Voltage
IC = -150 mA IB = -15 mA
I
= -500 mA IB = -50 mA
C
IC = -150 mA IB = -15 mA
I
= -500 mA IB = -50 mA
C
hFE∗ DC Current Gain IC = -0.1 mA VCE = -10 V
I
= -1 mA VCE = -10 V
C
I
= -10 mA VCE = -10 V
C
I
= -150 mA VCE = -10 V
C
I
= -500 mA VCE = -10 V
C
f
C
CBO
Transition Frequency IC = -50 mA VCE = -20V f = 100MHz 200 MHz
T
Collector-Base
IE = 0 VCB = -10 V f = 1 MHz 8 pF
75
100
100
100
50
-0.4
-1.6
-1.3
-2.6
300
Capacitance
C
EBO
Emitter-Base
IC = 0 VEB = -2 V f = 1 MHz 30 pF
Capacitance
t
t
t
t
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
Delay Time IC = -150 mA IB = -15 mA
d
Rise Time 40 ns
t
r
Switching On Time 45 ns
on
Storage Time IC = -150 mA IB1 = -IB2 = -15mA
s
Fall Time 30 ns
t
f
Switching Off Time 220 ns
off
V
CC
V
CC
= -30V
190 ns
= -30V
10 ns
V
V
V
V
2/5
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