SGS Thomson Microelectronics PKC-136 Datasheet
®
Application Specific Discretes
ASD™
MAIN PRODUCT CHARACTERISTICS
PKC-136
PEAK CLAMP
V
V
DRM
BR
160Vdc
700Vdc
P 1.5W
FEATURES
Protection of the Mosfet in flyback power supply
■
TRANSIL™ and blocking diode in a single
■
package
BENEFITS
Accurate voltage clamping regardless load
■
■ Reduced current loop
■ Reduced EMI emission
■ High integration
■
Fast assembly
■
Reduced losses in stand by mode
BASIC CONNECTION
Lf
DO-15
Io
T
D
Vo
ABSOLUTE MAXIMUM RATINGS (limiting values)
Symbol Parameter Value Unit
T
stg
Storage temperature
T
j
Junction temperature
P
August 2001 - Ed: 2A
Maximum power dissipation T°lead = 90°C
- 40 to + 150 °C
150 °C
1.5 W
1/5
PKC-136
ELECTRICAL CHARACTERISTICS TRANSIL
Symbol Parameter Test conditions
Unit
Min. Typ. Max.
Value
I
RM
V
BR
Leakage current VR= 136V
Breakdown voltage IR= 1mA
Tj= 25°C 1 µA
=125°C 10
T
j
Tj= 25°C 150 160 170 V
pulse test < 50ms
R
d
Dynamical Resistance tp < 500ns
Tj= 125°C 4 Ω
between I = 0.5Amps
and I = 1.5Amps
-4
αT
Temperature
10.8 10
/°C
Coefficient
V
sCL
Surge Clamping
voltage
Ipp = 2.7Amps
10/1000µs
219 V
CALCULATION OF THE CLAMPING VOLTAGE:
In repetitive mode and for low current rating, use the equation (1) and (2) to calculate the breakdown
voltage V
of the transil versus the operating junction temperature and use the equation (3) to calculate
BR
the clamping voltage versus the transil current Ipp and the temperature.
VTTVC
=− °α()()25 25
∆
BR j BR
VT V C V
() ( )=°+25 ∆
BR j BR BR
(1)
(2)
V T V T Rd Ipp
() () .=+
CL j BR j
(3)
ELECTRICAL CHARACTERISTICS DIODE (Tj = 25°C unless otherwise specified)
Value
Symbol Parameter Tests conditions
Min. Typ. Max.
I
R
V
RRM
Reverse leakage current VR=V
Repetitive Peak Reverse
Tj= 25°C
RRM
Tj= 25°C
= 125°C
T
j
320
700 V
3 µA
Voltage
trr
Reverse Recovery Time I
=1A dIF/ dt = -50A/µs
F
45 ns
VR= 30V
V
FP
Peak Forward Voltage IF=3A
dIF/ dt = 100A/µs
Tj= 25°C
= 125°C
T
j
12 V
18
CAPACITANCE
Symbol Parameter Typical Value Unit
C
Total Parasitic capacitance 1MHz 30mV
35 pF
Unit
2/5
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