SGS Thomson Microelectronics PFR850S, PFR851S, PFR852S, PFR854S, PFR856S Datasheet
FAST RECOVER Y RECTIFIER DIODES
LOW FORWARD VOLTAGE DROP
HIGH SURGE CURRENT CAPABILITY
APPLICATIONS
AC-DC POWER SUPPLIES AND CONVERTERS
FREE WHEELING DIODES, etc.
PFR 850S → 856S
PRELIMINARY DATASHEET
DESCRIP TION
Their high efficiency and high reliability combined
with small size an d low cost m ak e thes e f ast reco-
DO-201AD
(Plastic)
very rectifier diodes v ery attractive c omponents for
many demanding applications.
ABSOLUTE MAXIMUM RATINGS (limiting values)
Symbol Parameter Value Unit
I
FRM
I
F (AV)
I
FSM
P
tot
T
stg
T
T
L
Symbol Parameter
Repetitive Peak Forward Current
Average Forward Current* T
Surge non Repetitive Forward Current tp = 10ms
Power Dissipation*
Storage and Junction Temperature Range - 40 to + 175
j
Maximum Lead Temperature for Soldering during 10s at 4mm from
case
≤ 20µs
t
p
90°C
a =
δ = 0.5
Sinusoidal
90°C
T
a =
PFR
850S 851S 852S 854S 856S
100 A
3A
100 A
3.5 W
- 40 to + 175
230
°C
°C
Unit
V
V
RRM
RSM
Repetitive P eak Re v erse Voltage 50 100 200 400 600 V
Non Repetitive Peak Reverse Voltage 75 150 250 450 650 V
THERMAL RES ISTANCE
Symbol Parameter Value Unit
R
th (j - a)
* On infinite heatsink with 10mm lead length.
August 1996 - Ed: 1
Junction-ambient* 25
°C/W
1/3
PFR 850S → 856S
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Synbol Test Conditions Min. Typ. Max. Unit
I
R
V
F
Tj = 25°C
= 100°C
T
j
Tj = 25°C
V
R
= V
RRM
10
250
I
= 3A 1.25 V
F
RECOVERY CHA R ACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
t
rr
I
RM
Tj = 25°C I
= 30V diF/dt = - 25A/µs
V
R
Tj = 25°C I
V
= 30V diF/dt = - 25A/µs
R
= 1A PRF 850S →854S
F
= 1A
F
PRF 856S 200
150 ns
2A
µA
2/3
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