SGS Thomson Microelectronics PFR850, PFR851, PFR852, PFR854, PFR856 Datasheet
®
LOW FORWARD VOLTAGE DROP
HIGH SURGE CURRENT CAPAB ILITY
APPLICATIONS
AC-DC POWER SUPPLIES AND
CONVERTERS
FREE WHEELING DIODES, etc.
DESCRIPTION
PFR850→856
FAST RECOVERY RECTIFIER DIODE
PRELIMINARY DATASHEET
Their high efficiency and hig h reliability comb ined
with small size and low cost make these fast recovery rectifier diode very attractive components for
DO-201AD
(Plastic)
many demanding applications.
ABSOLUTE RATINGS
(limiting values)
Symbol Parameter Value Unit
I
FRM
I
F (AV)
I
FSM
Repetive peak forward current tp < 20µs
Average forward current* Ta = 90° C
δ
= 0.5
Surge non repetitive forward current tp = 10ms
100 A
3A
100 A
Sinusoidal
P
tot
T
stg
T
T
L
Power dissipation * Ta = 90° C 3.5 W
Storage and junction temperature range - 40 to + 175
j
Maximum lead temperature for soldering during 10s at
- 40 to + 175
230 °C
4mn from case
PFR
Symbol Parameter
850 851 852 854 856
°C
Unit
V
RRM
V
RSM
August 1998 - Ed: 2A
Repetitive peak revrse voltage 50 100 200 400 600 V
Non repetitive peak reverse voltage 75 150 250 450 650 V
1/3
PFR850 -> 856
THERMAL RESISTANCE
Symbol Parameter Value Unit
R
th (j - a)
* On infinite heatsink with 10mm lead lengh.
Junction-ambient* 25 °C/ W
STATIC ELECTRICAL CHARACT E RISTICS
Synbol Test Conditions Min. Typ. Max. Unit
I
R
V
F
Tj = 25°C VR = V
= 100°C 250
T
j
RRM
Tj = 25°C IF = 3A 1.25 V
10
RECOVERY CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
PRF 850→854
150 ns
I
t
RM
rr
Tj = 25°C IF = 1A
= 30V diF/dt = - 25A/µs PRF 856 200
V
R
Tj = 25°C IF = 1A 2 A
= 30V diF/dt = -25A/µs
V
R
µ
A
2/3
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