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PD57070
PD57070S
RF POWER TRANSISTORS
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
= 70 W with 14.7 dB gain @ 945 MHz / 28V
OUT
• NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD57070 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operat es
at 28 V in common source mode at frequencies of
up to 1 GHz. PD57070 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD57070’s
superior linearity performance makes it an ideal
solution for base station applications.
The LdmoST
PowerSO-10RF
(formed lead)
ORDER CODE
PD57070
Plastic FAMILY
BRANDING
PD57070
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SM D package. It has be en
specially optimized for RF needs and offers
ORDER CODE
PD57070S
PowerSO-10R F
(straight lead)
BRANDING
PD57070S
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
(BR)DSS
V
GS
I
D
P
DISS
Tj Max. Operating Junction Temperature 165 °C
T
STG
THERMAL DATA (T
R
th(j-c)
Drain-Source Voltage 65 V
Gate-Source Voltage ± 20 V
Drain Current 7 A
Power Dissipation (@ Tc = 70°C) 95 W
Storage Temperature -65 to +150 °C
=70 °C)
CASE
Junction -Case Thermal Resistance 1.0 °C/W
CASE
= 25 °C)
1/13March, 21 2003
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PD57070 - PD57070S
ELECTRICAL SPECIFICATION (T
CASE
= 25 °C)
STATIC
Symbol Test Conditions Min. Typ. Max. Unit
V
DSS(BR)
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
G
C
ISS
C
OSS
C
RSS
FS
VGS = 0 V IDS = 1 mA
VGS = 0 V VDS = 28 V
VGS = 20 V VDS = 0 V
VDS = 28 V
= 100 mA
ID
VGS = 10 V ID = 3 A
VDS = 10 V ID = 3 A
VGS = 0 V VDS = 28 V f = 1 MHz
VGS = 0 V VDS = 28 V f = 1 MHz
VGS = 0 V VDS = 28 V f = 1 MHz
65 V
1 µA
1 µA
2.0 5.0 V
0.8 0.95 V
2.5 mho
91 pF
58 pF
3.8 pF
Ref. 7143417B
DYNAMIC
Symbol Test Conditions Min. Typ. Max. Unit
P
out
G
P
η
D
Load
mismatch
VDD = 28 V IDQ = 250 mA f = 945 MHz
VDD = 28 V IDQ = 250 mA P
VDD = 28 V IDQ = 250 mA P
= 28 V IDQ = 250 mA P
V
DD
= 70 W f = 945 MHz
OUT
= 70 W f = 945 MHz
OUT
= 70 W f = 945 MHz
OUT
ALL PHASE ANGLES
70 W
13 14.7 dB
50 %
5:1 VSWR
2/13
GATE
SC15200
PIN CONNECTION
PD57070S
SOURCE
DRAIN
IMPEDANCE DATA
Z
FREQ. MHz
900 0.37 + j 0.60 1.7 - j 0.50
920 0.35 + j 0.60 1.6 - j 0.30
940 0.55 + j 0.40 1.5 - j 0.21
960 0.42 + j 0.30 1.4 - j 0.18
980 0.20 + j 0.20 1.2 - j 0.15
(Ω)Z
IN
Typical Input
Impeda nce
G
SC13140
(Ω)
DL
Zin
D
Z
Typical Drain
Load Imped ance
S
DL
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TYPICAL PERFORMANCE
Capacitance vs.Supply Voltage
1000
(PD55070S)
PD57070 - PD57070S
Drain Current vs. Gate-Surce Voltage
8
Vds = 10 V
7
100
C (pF)
10
f = 1 MHz
1
0 4 8 12 16 20 24 28
Ciss
Coss
Crss
Vdd (V)
Gate-Source Voltage vs. Case Temperature
1.02
1.01
1
0.99
Vgs (normalized)
ID = 6 A
ID = 5 A
ID = 4 A
ID = 3 A
6
5
4
Id (A)
3
2
1
0
123456
Vgs (V)
Output Power vs. Input Power
90
80
70
60
50
40
Pout (W)
30
925 MHz
890 MHz
960 MHz
945 MHz
0.98
0.97
-25 0 25 50 75 100
Tc (°C)
ID = 2 A
Power Gain vs. Output Power
18
945 MHz
16
14
Gp (dB)
12
10
8
0 20406080100
925 MHz
890 MHz
960 MHz
Pout (W )
Vdd = 28 V
Idq = 250 mA
20
10
0
01234
Pin (W)
Vdd = 28 V
Idq = 250 mA
Efficiency vs. Output Power
60
945, 960 MHz
50
890 MHz
40
30
d (%)
η
20
10
0
0 20406080100
Pout (W)
925 MHz
Vdd = 28 V
Idq = 250 mA
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PD57070 - PD57070S
TYPICAL PERFORMANCE
Input Return Loss vs. Output Power
(PD55070S)
Output Power vs. Gate-Source Voltage
0
-5
-10
-15
Rl (dB)
-20
-25
-30
0 20406080100
Pout (W )
960 MHz
945 MHz
925 MHz
890 MHz
Vdd = 28 V
Idq = 250 mA
Output Power vs. Bias Current
100
80
60
Pout (W)
40
890, 925 MHz
960 MHz
945 MHz
100
90
80
70
60
50
Pout (W)
40
30
20
10
890 MHz
925 MHz
960 MHz
945 MHz
Vdd = 28 V
Idq = 250 mA
Pin = 2.8 W
0
012345
Vgs (V)
Efficiency vs. Bias Current
60
925 MHz 960 MHz
50
890 MHz
40
30
d (%)
η
20
945 MHz
20
0
0 500 1000 1500 2000 2500
Idq (mA)
Vdd = 28 V
Pin = 2.8 W
Output Power vs. Supply Voltage
80
70
60
50
40
Pout (W)
30
20
10
0
12 14 16 18 20 22 24 26 28 30
945 MHz
960 MHz
Vdd (V)
890,925 MHz
Idq = 250 mA
Pin = 2.8 W
10
0
0 500 1000 1500 2000 2500
Idq ( m A)
Vdd = 28 V
Pin = 2.8 W
Efficiency vs. Supply Voltage
60
Vdd (V )
960 MHz
890 MHz
925, 945 MHz
Idq = 250 mA
Pin = 2.8 W
50
40
30
d (%)
η
20
10
0
12 14 16 18 20 22 24 26 28 30
4/13