SGS Thomson Microelectronics PD57070S Datasheet

PD57070

PD57070S

RF POWER TRANSISTORS

N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• P

= 70 W with 14.7 dB gain @ 945 MHz / 28V

OUT

• NEW RF PLASTIC PACKAGE

DESCRIPTION

The PD57070 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operat es
at 28 V in common source mode at frequencies of
up to 1 GHz. PD57070 boasts the excellent gain,

linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD57070’s
superior linearity performance makes it an ideal
solution for base station applications.

The LdmoST

PowerSO-10RF

(formed lead)

ORDER CODE

PD57070

Plastic FAMILY

BRANDING

PD57070

The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SM D package. It has be en
specially optimized for RF needs and offers

ORDER CODE

PD57070S

PowerSO-10R F

(straight lead)

BRANDING

PD57070S

excellent RF performances and ease of assembly.

Mounting recommendations are available in

www.st.com/rf/ (look for application note AN1294)

ABSOLUTE MAXIMUM RATINGS (T

Symbol Parameter Value Unit

V

(BR)DSS

V

GS

I

D

P

DISS

Tj Max. Operating Junction Temperature 165 °C

T

STG

THERMAL DATA (T

R

th(j-c)

Drain-Source Voltage 65 V
Gate-Source Voltage ± 20 V
Drain Current 7 A
Power Dissipation (@ Tc = 70°C) 95 W

Storage Temperature -65 to +150 °C

=70 °C)

CASE

Junction -Case Thermal Resistance 1.0 °C/W

CASE

= 25 °C)

1/13March, 21 2003

PD57070 - PD57070S

ELECTRICAL SPECIFICATION (T

CASE

= 25 °C)

STATIC

Symbol Test Conditions Min. Typ. Max. Unit

V

DSS(BR)

I

DSS

I

GSS

V

GS(Q)

V

DS(ON)

G

C

ISS

C

OSS

C

RSS

FS

VGS = 0 V IDS = 1 mA
VGS = 0 V VDS = 28 V
VGS = 20 V VDS = 0 V
VDS = 28 V

= 100 mA

ID

VGS = 10 V ID = 3 A
VDS = 10 V ID = 3 A
VGS = 0 V VDS = 28 V f = 1 MHz
VGS = 0 V VDS = 28 V f = 1 MHz
VGS = 0 V VDS = 28 V f = 1 MHz

65 V

1 µA
1 µA

2.0 5.0 V

0.8 0.95 V

2.5 mho
91 pF
58 pF

3.8 pF

Ref. 7143417B

DYNAMIC

Symbol Test Conditions Min. Typ. Max. Unit

P

out

G

P

η

D

Load

mismatch

VDD = 28 V IDQ = 250 mA f = 945 MHz
VDD = 28 V IDQ = 250 mA P
VDD = 28 V IDQ = 250 mA P

= 28 V IDQ = 250 mA P

V

DD

= 70 W f = 945 MHz

OUT

= 70 W f = 945 MHz

OUT

= 70 W f = 945 MHz

OUT

ALL PHASE ANGLES

70 W
13 14.7 dB

50 %

5:1 VSWR

2/13

GATE

SC15200

PIN CONNECTION

PD57070S

SOURCE

DRAIN

IMPEDANCE DATA

Z

FREQ. MHz

900 0.37 + j 0.60 1.7 - j 0.50
920 0.35 + j 0.60 1.6 - j 0.30
940 0.55 + j 0.40 1.5 - j 0.21
960 0.42 + j 0.30 1.4 - j 0.18
980 0.20 + j 0.20 1.2 - j 0.15

(Ω)Z

IN

Typical Input
Impeda nce

G

SC13140

(Ω)

DL

Zin

D

Z

Typical Drain
Load Imped ance

S

DL

TYPICAL PERFORMANCE

Capacitance vs.Supply Voltage

1000

(PD55070S)

PD57070 - PD57070S

Drain Current vs. Gate-Surce Voltage

8

Vds = 10 V

7

100

C (pF)

10

f = 1 MHz

1

0 4 8 12 16 20 24 28

Ciss

Coss

Crss

Vdd (V)

Gate-Source Voltage vs. Case Temperature

1.02

1.01

1

0.99

Vgs (normalized)

ID = 6 A

ID = 5 A

ID = 4 A

ID = 3 A

6

5

4

Id (A)

3

2

1

0

123456

Vgs (V)

Output Power vs. Input Power

90

80

70

60

50

40

Pout (W)

30

925 MHz

890 MHz

960 MHz

945 MHz

0.98

0.97

-25 0 25 50 75 100

Tc (°C)

ID = 2 A

Power Gain vs. Output Power

18

945 MHz

16

14

Gp (dB)

12

10

8

0 20406080100

925 MHz

890 MHz

960 MHz

Pout (W )

Vdd = 28 V
Idq = 250 mA

20

10

0

01234

Pin (W)

Vdd = 28 V
Idq = 250 mA

Efficiency vs. Output Power

60

945, 960 MHz

50

890 MHz

40

30

d (%)

η

20

10

0

0 20406080100

Pout (W)

925 MHz

Vdd = 28 V
Idq = 250 mA

3/13

PD57070 - PD57070S

TYPICAL PERFORMANCE

Input Return Loss vs. Output Power

(PD55070S)

Output Power vs. Gate-Source Voltage

0

-5

-10

-15

Rl (dB)

-20

-25

-30
0 20406080100

Pout (W )

960 MHz
945 MHz
925 MHz

890 MHz

Vdd = 28 V
Idq = 250 mA

Output Power vs. Bias Current

100

80

60

Pout (W)

40

890, 925 MHz

960 MHz

945 MHz

100

90

80

70

60

50

Pout (W)

40

30

20

10

890 MHz

925 MHz

960 MHz

945 MHz

Vdd = 28 V
Idq = 250 mA
Pin = 2.8 W

0

012345

Vgs (V)

Efficiency vs. Bias Current

60

925 MHz 960 MHz

50

890 MHz

40

30

d (%)

η

20

945 MHz

20

0

0 500 1000 1500 2000 2500

Idq (mA)

Vdd = 28 V
Pin = 2.8 W

Output Power vs. Supply Voltage

80

70

60

50

40

Pout (W)

30

20

10

0

12 14 16 18 20 22 24 26 28 30

945 MHz

960 MHz

Vdd (V)

890,925 MHz

Idq = 250 mA
Pin = 2.8 W

10

0

0 500 1000 1500 2000 2500

Idq ( m A)

Vdd = 28 V
Pin = 2.8 W

Efficiency vs. Supply Voltage

60

Vdd (V )

960 MHz

890 MHz

925, 945 MHz

Idq = 250 mA
Pin = 2.8 W

50

40

30

d (%)

η

20

10

0

12 14 16 18 20 22 24 26 28 30

4/13