SGS Thomson Microelectronics PD57060S Datasheet

PD57060

PD57060S

RF POWER TRANSISTORS

N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• P

= 60 W with 14.3 dB gain @ 945 MHz /

OUT

28V

• NEW RF PLASTIC PACKAGE
DESCRIPTION

The PD57060S is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28 V in common source mode at frequencies of
up to 1 GHz. PD57060S boasts the excellent gain,

linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD pla stic
RF power package, PowerSO-10RF. PD57060S’s
superior linearity performance makes it an ideal
solution for base station applications.

The

LdmoST

ORDER CODE

PD57060

Plastic FAMILY

PowerSO-10RF

(formed lead)

BRANDING

PD57060

The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SM D package. I t has b een
specially optmized for RF needs and offers

ORDER CODE

PD57060S

PowerSO-10R F

(Straight lead)

BRANDING

PD57060S

excellent RF performances and ease of assembly.

Mounting recommendations are available in

www.st.com/rf/ (look for application note AN1294)

ABSOLUTE MAXIMUM RATINGS (T

Symbol Parameter Value Unit

V

(BR)DSS

V

GS

I

D

P

DISS

Tj Max. Operating Junction Temperature 165 °C

T

STG

THERMAL DATA (T

R

th(j-c)

Drain-Source Voltage 65 V
Gate-Source Voltage ± 20 V
Drain Current 7 A
Power Dissipation (@ Tc = 70°C) 79 W

Storage Temperature -65 to +150 °C

= 70 °C)

CASE

Junction -Case Thermal Resistance 1.0 °C/W

CASE

= 25 °C)

1/12March, 21 2003

PD57060 - PD57060S

ELECTRICAL SPECIFICATION (T

CASE

= 25 °C)

STATIC

Symbol Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(Q)

V

DS(ON)

G

C

ISS

C

OSS

C

RSS

FS

VGS = 0 V IDS = 1 mA
VGS = 0 V VDS = 28 V
VGS = 20 V VDS = 0 V
VDS = 28 V

= 100 mA

ID

VGS = 10 V ID = 3 A
VDS = 10 V ID = 3 A
VGS = 0 V VDS = 28 V f = 1 MHz
VGS = 0 V VDS = 28 V f = 1 MHz
VGS = 0 V VDS = 28 V f = 1 MHz

65 V

1 µA
1 µA

2.0 5.0 V

0.7 0.8 V

2.5 mho
83 pF
58 pF

3pF

Ref. 7143417B

DYNAMIC

Symbol Test Conditions Min. Typ. Max. Unit

P

OUT

G

P

η

D

Load

mismatch

VDD = 28 V IDQ = 100 mA f = 945 MHz
VDD = 28 V IDQ = 100 mA P
VDD = 28 V IDQ = 100 mA P

= 28 V IDQ = 100 mA P

V

DD

= 60 W f = 945 MHz

OUT

= 60 W f = 945 MHz

OUT

= 60 W f = 945 MHz

OUT

ALL PHASE ANGLES

60 W

14.3 dB
54 %

5:1 VSWR

GATE

SC15200

PIN CONNECTION

PD57060S

FREQ.

890 MHz 0.646 + j 0.694 1.577 - j 0.997
925 MHz 0.568 + j 0.372 1.427 - j 1.459
945 MHz 0.705 + j 0.692 1.278 - j 1.935
960 MHz 0.591 + j 1.039 1.173 - j 2.464

SOURCE

DRAIN

Typical Input
Impedance

G

Zin

SC13140

Z

(Ω)Z

IN

DL

(Ω)

D

Z

Typical Drain
Load Impedance

S

DL

2/12

PD57060 - PD57060S

TYPICAL PERFORMANCE (PD57060S)
Capacitance vs. Supply Voltage Drain Current vs Gate-Source Voltage

C (pF)

1000

100

Ciss

Coss

Id (A)

8

7

6

5

4

10

Crss

f = 1 MHz

1

0 5 10 15 20 25 30

VDS (V)

3

2

1

0

2 2.5 3 3.5 4 4.5 5 5.5 6

VGS (V)

Gate-Source Voltage vs Case Temperature Output Power vs Input Power

VGS (Normalized)

1.06

1.04

1.02

1

0.98

0.96

0.94

VDS = 10 V

Id = 1 A

Id = 0.5 A

0.92

-25 0 25 50 75 100

Tc (°C)

Id = 5 A

Id = 4 A

Id = 3 A

Id = 2 A

Pout (W)

80

70

60

50

40

30

20

10

0

0 0.5 1 1.5 2 2.5 3 3.5 4

925MHz

890MHz

Pin (W)

960MHz

945MHz

VDS=10 V

VDS=28V
IDQ=100mA

Power Gain vs Output Power Drain Efficiency vs Output Power

Gp (dB)

18

16

890MHz

14

925MHz

960MHz

945MHz

12

10

8

6

4

2

VDS=28V
IDQ=100mA

0 1020304050607080

Pout (W)

Nd (%)

70

60

50

890MHz

945MHz

40

30

20

01020304050607080

Pout (W)

925MHz

960MHz

VDS=28V
IDQ=100mA

3/12

PD57060 - PD57060S

TYPICAL PERFORMANCE (PD57060S)
Input Return Loss vs Output Power Output Power vs Bias Curent

RL (dB)

0

890MHz

-10

960MHz

925MHz

-20

Pout (W)

80

70

60

50

40

890MHz

960MHz

925MHz

945MHz

-30

-40
0 1020304050607080

945MHz

VDS=28V
IDQ=100mA

Pout (W)

30

20

10

0 0.5 1 1.5 2 2.5

IDQ (A)

Drain Efficiency vs Bias Current Output Power vs Supply Voltage

Nd (%)

70

60

50

40

30

20

10

890MHz

960MHz

0 0.5 1 1.5 2 2.5

945MHz

925MHz

Pin=32.8 dB m
VDS=28V

IDQ (A)

Pout (W)

70

60

50

40

30

20

10

10 15 20 25 30

VDS (V)

925MHz

890MHz

Pin=32.8dBm
VDS=28V

945MHz

960MHz

Pin=32.8dBm
IDQ=100mA

Drain Efficiency vs Supply Voltage Output Power vs Gate-Source Voltage

Nd (%)

70

60

50

40

30

20

10

10 15 20 25 30

890MHz

925MHz

VDS (V)

4/12

945MHz

960MHz

Pin=32.8 dB m
IDQ= 100mA

Pout (W)

80

70

60

50

40

30

20

10

012345

890MHz

925MHz

960MHz

VGS (V)

9455MHz

Pin=32.8dBm
VDS=28v