SGS Thomson Microelectronics PD57045S Datasheet
PD57045
PD57045S
RF POWER TRANSISTORS
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 45 W with 13 dB gain @945 MHz / 28V
• NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD57045 is acommon source N-Channel, enhancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28V in common source mode at frequencies of
up to 1GHz. PD57045 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD57045’s superior linearity performance makes it an ideal solution for base station applications.
The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
The
LdmoST
Plastic FAMILY
PowerSO-10RF
(Formed Lead)
ORDER CODE BRANDING
PD57045 XPD57045
PowerSO-10RF
(Straight Lead)
ORDER CODE BRANDING
PD57045S XPD57045S
PRELIMINARY DATA
ABSOLUTE MAXIMUM RATINGS(T
Symbol Parameter Value Unit
V
(BR)DSS
V
GS
I
D
P
DISS
T
T
STG
THERMAL DATA(T
R
th(j-c)
May 2000
Drain-Source Voltage 65 V
Gate-Source Voltage ±20 V
Drain Current 5 A
Power Dissipation (@ Tc = 700C)
Max. Operating Junction Temperature 165 0
j
Storage Temperature -65 to 165
=700C)
CASE
Junction-Case Thermal Resistance 1.3
CASE
=250C)
73 W
0
0
C/W
C
C
1/8
PD57045 PD57045S
ELECTRICAL SPECIFICATION(T
CASE
=250C)
STATIC
Symbol Parameter Min. Typ. Max. Unit
V
(BR)DSSVGS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
g
FS
C
ISS
C
OSS
C
RSS
=0V IDS=1mA
VGS=0V VDS=28V
VGS=20V VDS=0V
VDS=28V ID= 250 mA
65 V
1 µA
1 µA
2.0 5.0 V
VGS=10V ID= 3 A 0.7 0.9 V
VDS=10V ID=5A
2.0 2.7 mho
VGS=0V VDS= 28 V f = 1 MHz 86 pF
VGS=0V VDS= 28 V f = 1 MHz
VGS=0V VDS=28V f=1MHz
47 pF
3.6 pF
DYNAMIC
Symbol Parameter Min. Typ. Max. Unit
P
OUT
G
PS
η
D
LOAD
Mismatch
VDD= 28 V f = 945 MHz IDQ= 250 mA
VDD= 28 V f = 945 MHz P
VDD= 28 V f = 945 MHz P
V
= 28 V f = 945 MHz P
DD
=45W IDQ=250mA
OUT
=45W IDQ=250mA
OUT
=45W IDQ=250mA
OUT
ALL PHASE ANGLES
45 W
13 14.5 dB
50
10:1 VSWR
%
2/8
SC15200
PIN CONNECTION
SOURCE
DRAINGATE
G
Zin
SC13140
IMPEDANCE DATA
PD57045S
Frequency
MHz
945 .80 + j 1.24 1.66 - j.44
Zin
Ω
Typical Input
Impedance
Zdl
Ω
D
Z
DL
Typical Drain
Load Impedance
S
TYPICAL PERFORMANCE
Capacitance vs. Drain Voltage
PD57045 PD57045S
Drain Current vs. Gate Voltage
1000
f=1MHz
100
10
C, CAPACITANCE (pF)
1
0 1020304050
Ciss
Coss
Crs s
VDS, DRAIN-SOURCE VOLTAGE (V)
Gate-Source Voltage vs. Case Temperature
1.04
1.02
D=3A
I
I
1
D=2A
4
3.5
Vds =10V
2.5 3 3.5 4 4.5 5
ID, DRAIN CURRENT (A)
3
2.5
2
1.5
1
0.5
0
VGS, GATE-SOURCE VOLTAGE (V)
0.98
V
DS=10 V
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
0.96
-25 0 25 50 75
D=.25A
I
Tc, CASE TEMPERATURE (°C)
ID=1.5A
I
D=1A
3/8
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