SGS Thomson Microelectronics PD57045S Datasheet

PD57045

PD57045S

RF POWER TRANSISTORS

N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• POUT = 45 W with 13 dB gain @945 MHz / 28V

• NEW RF PLASTIC PACKAGE

DESCRIPTION

The PD57045 is acommon source N-Channel, en­hancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28V in common source mode at frequencies of
up to 1GHz. PD57045 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech­nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD57045’s su­perior linearity performance makes it an ideal so­lution for base station applications.

The PowerSO-10 plastic package, designed to of­fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.

The

LdmoST

Plastic FAMILY

PowerSO-10RF

(Formed Lead)

ORDER CODE BRANDING

PD57045 XPD57045

PowerSO-10RF

(Straight Lead)

ORDER CODE BRANDING

PD57045S XPD57045S

PRELIMINARY DATA

ABSOLUTE MAXIMUM RATINGS(T

Symbol Parameter Value Unit

V

(BR)DSS

V

GS

I

D

P

DISS

T

T

STG

THERMAL DATA(T

R

th(j-c)

May 2000

Drain-Source Voltage 65 V
Gate-Source Voltage ±20 V
Drain Current 5 A

Power Dissipation (@ Tc = 700C)
Max. Operating Junction Temperature 165 0

j

Storage Temperature -65 to 165

=700C)

CASE

Junction-Case Thermal Resistance 1.3

CASE

=250C)

73 W

0

0

C/W

C
C

1/8

PD57045 PD57045S

ELECTRICAL SPECIFICATION(T

CASE

=250C)

STATIC

Symbol Parameter Min. Typ. Max. Unit

V

(BR)DSSVGS

I

DSS

I

GSS

V

GS(Q)

V

DS(ON)

g

FS

C

ISS

C

OSS

C

RSS

=0V IDS=1mA
VGS=0V VDS=28V
VGS=20V VDS=0V
VDS=28V ID= 250 mA

65 V

1 µA
1 µA

2.0 5.0 V
VGS=10V ID= 3 A 0.7 0.9 V
VDS=10V ID=5A

2.0 2.7 mho
VGS=0V VDS= 28 V f = 1 MHz 86 pF
VGS=0V VDS= 28 V f = 1 MHz
VGS=0V VDS=28V f=1MHz

47 pF

3.6 pF

DYNAMIC

Symbol Parameter Min. Typ. Max. Unit

P

OUT

G

PS

η

D

LOAD

Mismatch

VDD= 28 V f = 945 MHz IDQ= 250 mA
VDD= 28 V f = 945 MHz P
VDD= 28 V f = 945 MHz P
V

= 28 V f = 945 MHz P

DD

=45W IDQ=250mA

OUT

=45W IDQ=250mA

OUT

=45W IDQ=250mA

OUT

ALL PHASE ANGLES

45 W
13 14.5 dB
50

10:1 VSWR

%

2/8

SC15200

PIN CONNECTION

SOURCE

DRAINGATE

G

Zin

SC13140

IMPEDANCE DATA

PD57045S

Frequency

MHz

945 .80 + j 1.24 1.66 - j.44

Zin

Ω

Typical Input

Impedance

Zdl

Ω

D

Z

DL
Typical Drain

Load Impedance

S

TYPICAL PERFORMANCE

Capacitance vs. Drain Voltage

PD57045 PD57045S

Drain Current vs. Gate Voltage

1000

f=1MHz

100

10

C, CAPACITANCE (pF)

1

0 1020304050

Ciss

Coss

Crs s

VDS, DRAIN-SOURCE VOLTAGE (V)

Gate-Source Voltage vs. Case Temperature

1.04

1.02

D=3A

I

I

1

D=2A

4

3.5
Vds =10V

2.5 3 3.5 4 4.5 5

ID, DRAIN CURRENT (A)

3

2.5

2

1.5

1

0.5

0

VGS, GATE-SOURCE VOLTAGE (V)

0.98
V

DS=10 V

VGS, GATE-SOURCE VOLTAGE (NORMALIZED)

0.96

-25 0 25 50 75

D=.25A

I

Tc, CASE TEMPERATURE (°C)

ID=1.5A

I

D=1A

3/8

PD57045 PD57045S

TYPICAL PERFORMANCE - PD57045S

Output Power and Power Gain vs. Input Power

Power Gain vs. Output Power

60

Gp

50

40

30

20

Pout, OUTPUT POWER (W)

10

0

0 0.5 1 1.5 2 2.5 3 3.5

Pout

Pin, INPUT POWER (W)

Drain Efficiency vs.Output Power

60

50

40

30

VDD=28V
IDQ=250mA
f= 945MHz

16

15

14

13

12

Gp, POWER GAIN (dB)

11

10

17

16

15

14

13

12

Gp, POWER GAIN (dB)

11

10

0.1 1 10 100

Idq= 450mA

Idq =250mA

Idq= 150mA

Idq= 75mA

Vdd=28V
f=945Mhz

Pout, OUTPUT POWER (W)

Return Loss vs. Output Power

0

-10

-20

20

Nd, DRAIN EFFICIENCY (%)

10

0

0 102030405060

f=945MHz
Vdd=28V
Idq= 250mA

Pout, OUTPUT POWER (W)

Output Power vs. Bias Current

60

50

40

30

Pout, OUTPUT POWER (W)

20

0 200 400 600 800 1000

Idq, BIAS CURRENT (mA)

Pin=1.5W
Vdd= 28V
f= 945MHz

-30

Rtl, RETURN LOSS (dB)

-40

f= 945MHz
Vdd= 28V
Idq=250mA

0 102030405060

Pout, OUTPUT POWER (W)

Drain Efficiency vs. Bias Current

70

60

50

40

Nd, DRAIN EFFICIENCY (%)

30

0 200 400 600 800 1000

Idq, BIAS CURRENT (mA)

Pin= 1.5W
Vdd= 28V
f=945MHz

4/8

TYPICAL PERFORMANCE PD57045S

Output Power vs. Drain Voltage

PD57045 PD57045S

Output Power vs.Gate Bias Voltage

80

70

f=945MHz
Vdd= 28V
Idq=250mA

60

50

40

30

Pout, OUTPUT POWER (W)

20

10

16 18 20 22 24 26 28 30 32 34

VDS, DRAIN-SOURCE VOLTAGE (V)

Pin=3 W

Pin= 2W

Pin= 1.5W

Pin= 1W

50

40

30

20

Pout, OUTPUT POWER (W)

10

0

0 0.5 1 1.5 2 2.5 3 3.5 4

Pin=1.5W
Vdd= 28V
f=945MHz

VGS, GATE BIAS VOLTAGE (V)

TEST CIRCUIT PHOTOMASTER

4 inches

6.4 inches

5/8

PD57045 PD57045S

TEST CIRCUIT SCHEMATIC

TEST CIRCUIT COMPONENT PART LIST

INDUCTOR, 5TURNS AIR WOUND #22AWG,

L1

ID=0.059{1.49}, NYLON COATED MAGNET WIRE
INDUCTOR, 5TURNS AIR WOUND #22AWG,

L2

ID=0.059{1.49}, NYLON COATED MAGNET WIRE

FB1 SHIELD BEAD SURFACEMOUNT EMI C9 0.8-8.0pF GIGA TRIM VARIABLE CAPACITOR

FB2 SHIELD BEAD SURFACEMOUNT EMI C10

R1 18K OHM, 1W SURFACEMOUNT CHIP RESISTOR C11

R2 4.7M OHM, 1W SURFACE MOUNT CHIPRESISTOR C12

R3 120 OHM,2W SURFACE MOUNT CHIP RESISTOR C13

3pF ATC 100B SURFACE MOUNT CERAMIC CHIP

C1

CAPACITOR
3pF ATC 100B SURFACE MOUNT CERAMIC CHIP

C2

CAPACITOR
47pF ATC100B SURFACE MOUNT CERAMIC CHIP

C3

CAPACITOR

C4 0.8-8.0pF GIGA TRIM VARIABLE CAPACITOR C17

7.5pF ATC100B SURFACE MOUNT CERAMIC CHIP

C5

CAPACITOR

7.5pF ATC 100B SURFACE MOUNT CERAMICCHIP

C7

CAPACITOR

7.5pF ATC 100B SURFACE MOUNT CERAMICCHIP

C8

CAPACITOR

47pF ATC100B SURFACE MOUNT CERAMIC CHIP
CAPACITOR

47pF ATC100B SURFACE MOUNT CERAMIC CHIP
CAPACITOR

1000pF ATC700B SURFACEMOUNT CERAMIC CHIP
CAPACITOR

0.1µF/500V SURFACE MOUNT CERAMIC CHIP
CAPACITOR

10µF/50V ALUMINNUM ELECTROLYTIC RADIAL LEAD

C14

CAPACITOR
47pF ATC100B SURFACE MOUNT CERAMIC CHIP

C15

CAPACITOR
100pF ATC 100B SURFACE MOUNT CERAMIC CHIP

C16

CAPACITOR

0.1µF/500V SURFACE MOUNT CERAMIC CHIP
CAPACITOR

220µF/63V ALUMINUM ELECTROLYTIC RADIAL LEAD

C18

CAPACITOR

6/8

7.5pF ATC100B SURFACE MOUNT CERAMIC CHIP

C6

CAPACITOR

ROGER, ULTRA LAM 2000 THK 0.030”

Board

Cu 2 SIDES

ε

= 2.55 2oz ED

r

PowerSO-10RF (Straight Lead) MECHANICAL DATA

PD57045 PD57045S

PowerSO-10RF (Formed Lead) MECHANICAL DATA

7/8

PD57045 PD57045S

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of use of suchinformation nor for any infringement of patents or otherrights ofthird parties which may result from its use.No license isgranted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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