SGS Thomson Microelectronics PD57030S Datasheet

PD57030
PD57030S
RF POWER TRANSISTORS
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
POUT = 30 W with 13 dB gain @945 MHz /28V
NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD57030 is acommon source N-Channel, en­hancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28V in common source mode at frequencies of up to 1GHz. PD57030 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS tech­nology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD57030’s su­perior linearity performance makes it an ideal so­lution for base station applications.
The PowerSO-10 plastic package, designed to of­fer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.
The
LdmoST
PowerSO-10RF
(Formed Lead)
ORDER CODE BRANDING
PD57030 XPD57030
PowerSO-10RF
(Straight Lead)
ORDER CODE BRANDING
PD57030S XPD57030S
TARGET DATA
ABSOLUTE MAXIMUM RATINGS(T
Symbol Parameter Value Unit
V
(BR)DSS
V
GS
I
D
P
DISS
T
T
STG
THERMAL DATA(T
R
th(j-c)
May 2000
Drain-Source Voltage 65 V Gate-Source Voltage ±20 V Drain Current 4 A
Power Dissipation (@ Tc = 700C) Max. Operating Junction Temperature 165 0
j
Storage Temperature -65 to 175
=700C)
CASE
Junction-Case Thermal Resistance 1.8
CASE
=250C)
52.8 W
0
0
C/W
C C
1/4
PD57030 PD57030S
ELECTRICAL SPECIFICATION(T
CASE
=250C)
STATIC
Symbol Parameter Min. Typ. Max. Unit
V
(BR)DSSVGS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
g
FS
C
ISS
C
OSS
C
RSS
=0V IDS= 10mA VGS=0V VDS=28V VGS= 20V VDS=0V VDS= 28V ID= 50mA
65 V
1 µA 1 µA
2.0 5.0 V VGS= 10V ID= 3A 1.3 V VDS= 10V ID=3A
1.8 mho VGS=0V VDS= 28V f = 1 MHz 57 pF VGS=0V VDS=28V f=1MHz VGS=0V VDS=28V f=1MHz
30 pF
1.4 pF
DYNAMIC
Symbol Parameter Min. Typ. Max. Unit
P
OUT
G
PS
η
D
LOAD
Mismatch
VDD= 28V f = 945 MHz IDQ= 50mA VDD= 28V f = 945 MHz P VDD= 28V f = 945 MHz P V
= 28V f = 945MHz P
DD
= 30W IDQ= 50mA
OUT
= 30W IDQ= 50mA
OUT
= 30W IDQ= 50mA
OUT
ALL PHASE ANGLES
30 W 13 14 dB 50 60
10:1 VSWR
%
2/4
PIN CONNECTION
SOURCE
DRAINGATE
SC15200
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