SGS Thomson Microelectronics PD57006 Datasheet
PD57006
PD57006S
RF POWER TRANSISTORS
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
= 6 W with 15 dB gain @ 945 MHz / 28V
OUT
• NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD57006 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28 V in common source mode at frequencies of
up to 1 GHz. PD 57006 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF
power package, PowerSO-10RF . PD57006’s superior linearity performance makes it an ideal solution for car mobile radio.
The LdmoST
PowerSO-10RF
(formed lead)
ORDER CODE
PD57006
Plastic FAMILY
BRANDING
PD57006
The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been spe cially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
ORDER CODE
PD57006S
PowerSO-10R F
(straight lead)
BRANDING
PD57006S
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
(BR)DSS
V
GS
I
D
P
DISS
Tj Max. Operating Junction Temperature 165 °C
T
STG
Drain-Source Voltage 65 V
Gate-Source Voltage ± 20 V
Drain Current 1 A
Power Dissipation (@ Tc = 70°C) 20 W
Storage Temperature -65 to +150 °C
CASE
= 25°C)
THERMA L D ATA
R
th(j-c)
Junction -Case Thermal Resistance 5 °C/W
1/14March, 21 2003
PD57006 - PD57006S
ELECTRICAL SPECIFICATION (T
CASE
= 25°C)
STATIC
Symbol Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
g
FS
C
ISS
C
OSS
C
RSS
VGS = 0 V ID = 10 mA
VGS = 0 V VDS = 28 V
VGS = 20 V VDS = 0 V
VDS = 28 V
= 70 mA
ID
VGS = 10 V ID = 0.5 A
VDS = 10 V ID = 800 mA
VGS = 0 V VDS = 28 V f = 1 MHz
VGS = 0 V VDS = 28 V f = 1 MHz
VGS = 0 V VDS = 28 V f = 1 MHz
65
1 µA
1 µA
2.0 5.0 V
0.9 V
0.58 mho
27 pF
14 pF
0.9 pF
DYNAMIC
Symbol Test Conditions Min. Typ. Max. Unit
P
OUT
G
P
η
D
Load
mismatch
VDD = 28 V IDQ = 70 mA f = 945 MHz
V
= 28 V IDQ = 70 mA P
DD
VDD = 28 V IDQ = 70 mA P
= 28 V IDQ = 70 mA P
V
DD
= 6 W f = 945 MHz
OUT
= 6 W f = 945 MHz
OUT
= 6 W f = 945 MHz
OUT
ALL PHASE ANGLES
6W
14 15 dB
45 50 %
10:1 VSWR
PIN CONNECTION
SOURCE
GATE
SC15200
PD57006
(Ω)Z
FREQ. MHz
Z
IN
925 6.040 - j 0.936 6.273 + j 8.729
945 5.886 - j 2.326 6.578 + j 5.999
960 6.056 - j 3.522 7.215 + j 7.539
DRAIN
DL
IMPEDANCE DATA
(Ω)
D
Typical Input
Impeda nce
Typical Drain
Load Imped ance
G
Zin
S
SC13140
PD57006S
(Ω)Z
FREQ. MHz
Z
IN
925 3.794 - j 1.632 3.513 + j 10.81
945 4.039 - j 2.300 3.862 + j 10.58
960 4.250 - j 3.791 4.005 + j 11.34
Z
DL
(Ω)
DL
2/14
TYPICAL PERFORMANCE
0 4 8 12 16 20 24 28
VDD, DRAIN VOLTAGE (V)
0.1
1
10
100
C, CAPACITANCES (pF)
Ciss
Coss
Crss
f=1MHz
Capacitance vs. Drain Voltage
Gate-Source Voltage vs. Case Temperature
PD57006 - PD57006S
Drain Current vs. Gate-Source Voltage
1
0.8
0.6
0.4
Id, DRAIN CURRENT (A)
0.2
0
2 2.5 3 3.5 4 4.5 5 5.5
VGS, GATE-SOURCE VOLTAGE (V)
Vds=10 V
1.06
1.04
1.02
1
0.98
0.96
0.94
0.92
VGS, GATE-SOURCE VOLTAGE(Normalized)
-25 0 25 50 75 100
Vds=10 V
Tc, CASE TEMPERATURE (°C)
Id=.05 A
Id=1.5 A
Id=1 A
Id=.6 A
Id=.2 A
3/14
PD57006 - PD57006S
TYPICAL PERFORMANCE
Output Power vs. Input Power
PD57006
Power Gain vs. Output Power
9
8
7
6
5
4
3
2
Pout, OUTPUT POWER (W)
1
0
0 0.1 0.2 0.3 0.4
Pin, INPUT POWER (W)
925 MHz
960 MHz
945 MHz
Vdd=28V
Idq=70mA
Drain Efficiency vs. Output Power
60
50
40
945 MHz
30
20
Nd, DRAIN EFFICIENCY (%)
10
0123456789
Pout, OUTPUT POWER (W )
925 MHz
960 MHz
Vdd=28V
Idq=70mA
18
16
14
12
10
8
Pg, POWER GAIN (dB)
6
4
0123456789
945 MHz
Pout, OUTPUT POWER (W)
925 MHz
960 MHz
Vdd=28V
Idq=70mA
Inpu t R e turn L o s s vs. Out p u t Powe r
0
-5
-10
-15
Rtl, RETURN LOSS (dB)
-20
-25
0123456789
960 MHz
925 MHz
Pout, OUTPUT POWER (W )
945 MHz
Vdd=28V
Idq=70mA
Output Power vs. Bias Current
10
8
6
4
2
Pout, OUTPUT POWER (W)
0
0 100 200 300 400
4/14
925 MHz
IDQ, BIAS CURRENT (mA)
945 MHz
960 MHz
Vdd=28V
Pin= 23.6 dBm
Drain Efficiency vs. Bias Current
60
50
40
30
20
Nd, DRAIN EFFICIENCY (%)
10
0 100 200 300 400
945 MHz
925 MHz
IDQ, BIAS CURRENT (mA)
960 MHz
Vdd=28V
Pin= 23.6 dBm
TYPICAL PERFORMANCE
Output Power vs. Supply Voltage
PD57006 - PD57006S
Drain Efficiency vs. Supply Voltage
8
7
6
5
4
3
Pout, OUTPUT POWER (W)
2
1
10 12 14 16 18 20 22 24 26 28 30
VDD, SUPPLY VOLTAGE (V)
945 MHz
925 MHz
960 MHz
Idq=70 mA
Pin= 23.6 dBm
Output Power vs. Gate-Source Voltage
9
8
7
6
5
4
3
2
Pout, OUTPUT POWER (W)
1
0
01234
VGS, G ATE-SOURCE VOLTAGE (V)
925 MHz
945 MHz
Vdd=28V
Pin= 23.6 dBm
960 MHz
60
925 MHz
50
40
30
20
Nd, DRAIN EFFICIENCY (%)
10
960 MHz
10 12 14 16 18 20 22 24 26 28 30
945 MHz
VDD, SUPPLY VOLTAGE (V)
Idq= 70 mA
Pin= 23.6 dBm
5/14
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