SGS Thomson Microelectronics M29W004BT, M29W004BB90N6, M29W004BB70N1, M29W004BB55N1, M29W004BB Datasheet

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1/20March 2000
M29W004BT
M29W004BB
4 Mbit (512Kb x8, Boot Block)
Low Voltage Single Supply Flash Memory
SINGLE 2.7 to 3.6V SU PPL Y VO LT AG E fo r
PROGRAM, ERAS E and READ O PER AT IONS
PROGRAMMING TIME
– 10µs by Byte typical
11 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location) – 2 Parameter and 8 Main Blocks
PROGRAM/ERA SE CON T ROL LER
– Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits – Ready/Busy Output Pin
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
TEMPORARY BLOCK UNPROTECTION
MODE
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
LOW POWER CONSUMPTION
– Standby and Automatic Standby
100,000 PROGRAM/ER ASE CYCL ES per
BLOCK
20 YEARS DATA RETENTI ON
– Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h – Top Device Code M29W004BT: EAh – Bottom Device Code M29W004BB: EBh
TSOP40 (N)
10 x 20mm
Figure 1. Logic Diagram
AI02954
19
A0-A18
W
DQ0-DQ7
V
CC
M29W004BT M29W004BB
E
V
SS
8
G
RP
RB
M29W004BT, M29W004BB
2/20
Figure 2. TSOP Connection s
V
SS
DQ1
DQ2A7
A1
E
A4 A3
A11
A17
A14
A15
DQ7
A9
A16
G
NC
DQ5
DQ3
NC
V
CC
DQ4
DQ6
A8
W
RB
A18
NC
RP
AI02950
M29W004BT M29W004BB
10
1
11
20 21
30
31
40
A0
A12
A13
NC A10
A5
A6
V
CC
DQ0
V
SS
A2
Table 1. Signal Names
A0-A18 Address Inputs DQ0-DQ7 Data Inputs/Outputs E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset/Block Temporary Unprotect
RB
Ready/Busy Output
V
CC
Supply Voltage
V
SS
Ground
NC Not Connected Internally
be protected independently to prev ent accidental Program or Erase commands from modifying the memory. Program and Erase com m ands are wri t­ten to the Command Interface of t he memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase op eration can be de tected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.
The blocks in the memory are asymmetrically ar­ranged, see Tables 3 and 4, Block Addresses. The first or last 64 Kbytes hav e been divide d into four additional blocks. The 16 Kbyte Boot Block can be used for small initialization code to start the micro­processor, the two 8 Kbyte Parameter Blocks can be used for parameter storage and the rem aining 32 Kbyte is a small Main Block where the applica­tion may be stored.
Chip Enable, Output Enable and Write Enable sig­nals control the bus operation of the memory. They allow simple conne ction to most micropro­cessors, often without additional logic.
The memory is offered in a TSOP40 (10 x 20mm) package and it is supplied with all the bits eras ed
(set to ’1’).
SUMMARY DESCRIPTION
The M29W004B is a 4 M bit (512Kb x8) n on-vola­tile memory that can be read, erased and repro­grammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29W004B is fully backward com­patible with the M29W004.
The memory is divided into blocks that can be erased independently so it is pos sible to pres erve valid data while old data is erased. Each block can
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M29W004BT, M29W004BB
Table 2. Absolute Maximum Ratings
(1)
Note: 1. Except for the ratin g " Operati ng Temperat ure Range" , stresses above th ose liste d i n t he Table " A bsolute M aximum Ratings" may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indi cated in the Operating sections of this s pecification is not impli ed. Exposure to A bsolute M aximum Rating condi­tions for extended per iods may aff ect device reliabilit y. Refer also to the STMicroel ectronics SURE Program an d other relevan t qual ­ity docum en ts .
2. Mini m um Voltage ma y undershoot to –2V duri ng transit i on and for less t han 20ns duri ng transit io ns.
Symbol Parameter Value Unit
T
A
Ambient Operating Temperature (Temperature Range Option 1) 0 to 70 °C
Ambient Operating Temperature (Temperature Range Option 6) –40 to 85 °C
T
BIAS
Temperature Under Bias –50 to 125 °C
T
STG
Storage Temperature –65 to 150 °C
V
IO
(2)
Input or Output Voltage –0.6 to 4 V
V
CC
Supply Voltage –0.6 to 4 V
V
ID
Identification Voltage –0.6 to 13.5 V
Table 3. Top Boot Block Addresses M29W004BT
#
Size
(Kbytes)
Address Range
10 16 7C000h-7FFFFh
9 8 7A000h-7BFFFh 8 8 78000h-79FFFh 7 32 70000h-77FFFh 6 64 60000h-6FFFFh 5 64 50000h-5FFFFh 4 64 40000h-4FFFFh 3 64 30000h-3FFFFh 2 64 20000h-2FFFFh 1 64 10000h-1FFFFh 0 64 00000h-0FFFFh
Table 4. Bottom Boot Block Addresses M29W004BB
#
Size
(Kbytes)
Address Range
10 64 70000h-7FFFFh
9 64 60000h-6FFFFh 8 64 50000h-5FFFFh 7 64 40000h-4FFFFh 6 64 30000h-3FFFFh 5 64 20000h-2FFFFh 4 64 10000h-1FFFFh 3 32 08000h-0FFFFh 2 8 06000h-07FFFh 1 8 04000h-05FFFh 0 16 00000h-03FFFh
M29W004BT, M29W004BB
4/20
SIGNAL DESCRIPTIONS
See Figure 1, Logic Diagram, and Table 1, Sign al Names, for a brief overview of the signals connect­ed to this device.
Address Inputs (A0-A18). The Address Inputs select the cells i n the memory array to a ccess dur­ing Bus Read operations. During Bus Write opera­tions they control the commands sent to the Command Interface of the internal state machine.
Data Inputs/Outputs (DQ0-DQ7). The Data In­puts/Outputs output the data stored at the selected address during a Bus Read operation. During Bus Write operations they represent the commands sent to the Command Interface of the internal state machine.
Chip Enable (E
). The Chip Enable, E, activates
the memory, allowing Bus Read and Bus Write op­erations to be performed. When Chip Enable is High, V
IH
, all other pins are ignored.
Output Enable (G
). The Output Enable, G, con-
trols the Bus Read operation of the memory.
Write Enable (W
). The Write Enable, W, controls
the Bus Write operation of the memory’s Com­mand Interf a c e .
Reset/Block Temporary Unprotect (RP
). The Re-
set/Block Temporary Unprotect pin can be used to apply a Hardware Reset to the memory or to tem­porarily unprotect all Blocks that have been pro­tected.
A Hardware Reset is achieved by holding Reset/ Block Temporary Unprotect Low, V
IL
, for at least
t
PLPX
. After Reset/Block Temporary Unprotect
goes High, V
IH
, the memory will be ready for Bus
Read and Bus Write operations after t
PHEL
or
t
RHEL
, whichever occurs last. See the Ready/Busy Output section, Table 15 and Figure 10, Reset/ Temporary Unprotect AC Characteristics for more details.
Holding RP
at VID will temporarily unprotect the protected Blocks in the memory. Program and Erase operations on all blocks will be possible. The transition from V
IH
to VID must be slower than
t
PHPHH
.
Ready/Busy Output (RB
). The Ready/Busy pin
is an open-drain output that can be used to identify when the memory array can be read. Ready/Busy is high-impedance during Read mode, Auto Select mode and Erase Suspend mode.
After a Hardware Reset, Bus Read and Bus Write operations cannot begin until Ready/Busy be­comes high-impedance. See Tabl e 15 and Figure 10, Reset/Temporary Unprotect AC Ch aracteris­tics.
During Program or Erase operations Ready/Busy is Low, V
OL
. Ready/Busy will remain Low during Read/Reset commands or Hardw are Resets until the memory is ready to enter Read mode.
The use of an open-drain output allows the Ready/ Busy pins from several memories to be connected to a single pull-up resistor. A Low will then indicate that one, or more, of the memories is busy.
V
CC
Supply Voltage. The VCC Supply Voltage
supplies the power for all operations (Read, Pro­gram, Erase etc.).
The Command Interface is disabled when the V
CC
Supply Voltage is less than the L ockout Voltage, V
LKO
. This prevents Bus Write operations from ac­cidentally damaging the data during power up, power down and power surges. If the Program/ Erase Controller is programming or erasing during this time then the operation aborts and the memo­ry contents being altered will be invalid.
A 0.1µF capacitor should be connected between the V
CC
Supply Voltage pin and the VSS Ground pin to decouple the current surges from the power supply. The PCB track widths must be sufficient to carry the currents required during program and erase operations, I
CC3
.
V
SS
Ground. The VSS Ground is the reference for
all voltage measurements.
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M29W004BT, M29W004BB
Table 5. Bus Operations
Note: X = VIL or VIH.
Operation E G W Address Inputs
Data
Inputs/Outp uts
Bus Read
V
IL
V
IL
V
IH
Cell Address Data Output
Bus Write
V
IL
V
IH
V
IL
Command Address Data Input
Output Disable
XV
IH
V
IH
X Hi-Z
Standby
V
IH
X X X Hi-Z
Read Manufacturer Code
V
IL
V
IL
V
IH
A0 = VIL, A1 = VIL, A9 = VID, Others V
IL
or V
IH
20h
Read Device Code
V
IL
V
IL
V
IH
A0 = VIH, A1 = VIL, A9 = VID, Others V
IL
or V
IH
EAh (M29W004BT) EBh (M29W004BB)
BUS OPERATIONS
There are five standard bus operations that control the device. These are Bus Read, Bus Wri te, Out­put Disable, Standby and Automatic Standby. See Table 5, Bus Operations, for a summary. Typically glitches of less than 5ns on Chip Enabl e o r Write Enable are ignored by t he mem ory and do not a f­fect bus operations.
Bus Read. Bus Read operations read from the memory cells, or specific registers in the Com­mand Interface. A valid Bus Read operation in­volves setting the desired address on the Address Inputs, applying a Low sig nal, V
IL
, to Chip Enable and Output Enable and keeping Write Enable High, V
IH
. The Data Inputs/Outputs will output the value, see Figure 7, Rea d Mode AC Wav eforms, and Table 12, Read AC Characteristics, for details of when the output becomes valid.
Bus Write. Bus Write operations write to the Command Interface. A valid Bus Write operation begins by setting the desire d address on t he Ad­dress Inputs. The Address Inputs are latched by the Command Interface on the falling edge of Chip Enable or Write Enable, whichever occurs last. The Data Inputs/Outputs a re latched by the Com­mand Interface on the rising edge of Chip Enable or Write Enable, whichever occurs first. Output En­able must remain High, V
IH
, during the whole Bus Write operation. See Figures 8 and 9, Write AC Waveforms, and Tables 13 and 14, Write AC Characteristics, for details of the timing require­ments.
Output Disa bl e . The Data Inputs/Outputs are in the high impedance s tate when Output Enable is High, V
IH
.
Standby. When Chip Enable is High, V
IH
, the memory enters Standby mode and the Data In­puts/Outputs pins are placed in the high-imped-
ance state. To reduce the S upply Current to the Standby Supply Current, I
CC2
, Chip Enable should
be held within V
CC
± 0.2V. For the Standby current
level see Table 11, DC Characteristics. During program or erase operations the memory
will continue to use the Program/Erase Supply Current, I
CC3
, for Program or Erase operations un-
til the operation completes. Automatic Standby. If CMOS levels (V
CC
± 0.2V) are used to drive the bus and the bus is inactive for 150ns or more the memory enters Automatic Standby where the internal Supply Current is re­duced to the Standby Supply Current, I
CC2
. The Data Inputs/Outputs will still output data if a Bus Read operation is in progress.
Special Bus Operations
Additional bus operations can be performed to read the Electronic Signature and also to apply and remove Block Protec tion. These bus opera­tions are intended for use by programming equip­ment and are not usually used in applications. They require V
ID
to be applied to some pins.
Electronic Signature. The memory has two codes, the manufacturer code and the device code, that can be read to identify the memory. These codes can be read by applying t he signals listed in Table 5, Bus Operations.
Block Protectio n and Blocks Unprotection. Each block can be separately protected against acci­dental Program or Erase. Protected blocks can be unprotected to allow data to be changed.
There are two methods available for protecting and unprotecting the blocks, one for use on pro­gramming equipment and the other for in-system use. For further information refer to Application Note AN1122, Applying P rotection and Unp rotec­tion to M29 Series Flash.
M29W004BT, M29W004BB
6/20
COMMAND INTERFACE
All Bus Write operations t o the me mory are in ter­preted by the Command Interface. Commands consist of one or more sequential Bus Write oper­ations. Failure to observe a valid sequence of Bus Write operations will result in the memory return­ing to Read mode. The long command sequences are imposed to maximize data security.
The commands are summarized in Table 6, Com­mands. Refer to Table 6 in conjunction with the text descriptions below.
Read/Reset Command. The Read/Reset com­mand returns the memory to its Read mode where it behaves like a ROM or EPROM. It also resets the errors in the Status Register. Either one or three Bus Write operations can be u sed to issue the Read/Reset command.
If the Read/Reset command is issued during a Block Erase operation or following a Programming or Erase error then the memory will take up to 10
µs
to abort. During the abort period no valid data can be read from the mem ory. Issuing a Read/Reset command during a Block Erase operation will leave invalid data in the memory.
Auto Select Command. The Auto Select com­mand is used to read the Man ufacturer Code, the Device Code and the Block Protection Status. Three consecutive Bus Write operations are re­quired to issue the Auto Select command. Once the Auto Select comma nd is issued the memory remains in Auto Select mode unt il another com­mand is issued.
From the Auto Select mode the Manufacturer Code can be read using a Bus Read operation with A0 = V
IL
and A1 = VIL. The other address bits
may be set to either V
IL
or VIH. The Manufa cturer
Code for STMicroelectronics is 20h. The Device Code can be read using a B us Read
operation with A0 = V
IH
and A1 = VIL. The other
address bits may be set to e ither V
IL
or VIH. The Device Code for the M29W004BT is EAh and the M29W004BB is EBh .
The Block Protecti on St at us of e ac h bl ock can be read using a Bus Rea d operation with A0 = V
IL
,
A1 = V
IH
, and A13-A18 specifying the add ress of the block. The other address bits may be set to ei­ther V
IL
or VIH. If the addressed block is protected then 01h is output on the Data Inputs/Outputs, oth­erwise 00h is output.
Program Command. The Program command can be used to program a value to one address in the memory array at a time. The command re­quires four Bus Write operations, the final write op-
eration latches the address and data in the internal state machine and starts the Program/Erase Con­troller.
If the address falls in a pro tected block then the Program command is ignored, the data remains unchanged. The Status Register is never read and no error condition is given.
During the program operat ion the memo ry will ig­nore all commands. I t is n ot poss ible t o iss ue any command to abort or pause the operation. Typical program times are given in Table 7. Bus Read op­erations during the program o peration will output the Status Register on the Data Inputs/Outputs. See the section on the S tatus Register for more details.
After the program operation has completed the memory will return to the Read mode, unle ss an error has occurred. When an error occurs the memory will continue to output the Status Regis­ter. A Read/Reset command must be issued to re­set the error condition and return to Read mode.
Note that the Program command cannot change a
bit set at ’0’ bac k to ’1’. One of the E rase Com­mands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’.
Unlock Bypass Command. The Unlock Bypass command is used in conjunction with the Unlock Bypass Program command to program the memo­ry. When the access time to the device is long (as with some EPROM programmers) considerable time saving can be made by using these com­mands. Three Bus Write operations are requ ired to issue the Unlock Bypass command.
Once the Unlock Bypas s command has bee n is­sued the memory will only accept the Unloc k By­pass Program command and the Unlock Bypass Reset command. The memory can be read as if in Read mode.
Unlock Bypass Program Command. The Un­lock Bypass Prog ram comma nd can be used to program one address in memory at a time. The command requires two B us Write operations, the final write operation latches the address and data in the internal stat e machine and starts th e Pro­gram/Erase Controller.
The Program operation using the Unlock Bypass Program command behaves identically to the Pro­gram operation using the Program command. A protected block cannot be programmed; the oper­ation cannot be aborted and the Status Register is read. Errors must be reset using the Read/Re set command, which l eaves the d evice in Unlo ck By­pass Mode. See the Program command for details on the behavior.
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