SGS Thomson Microelectronics M27C2001 Datasheet
2 Mbit (256Kb x 8) UV EPROM and OTP EPROM
■ 5V ± 10% SUPPLY VOLTAGE in READ
OPERATION
■ FAST ACCESS TIME: 55ns
■ LOW POWER CONSUMPTION:
– Active Current 30mA at 5MHz
– Standby Current 100µA
■ PROGRAMMING VOLTAGE: 12.75V± 0.25V
■ PROGRAMMING TIME: 100µs/byte (typical)
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 61h
M27C2001
32
1
FDIP32W (F) PDIP32 (B)
32
1
DESCRIPTION
The M27C2001 is a high speed 2 Mbit EPROM offered in the two ranges UV (ultra violet erase) and
OTP (one time programmable). It is ideally suited
for microprocessor systems requiring large programs and is organised as 262,144 by 8 bits.
The FDIP32W (window ceramic frit-seal package)
and LCCC32W (leadless chip carrier package)
have a transparent lids which allow the user to expose the chipto ultraviolet light to erase thebitpattern. A new pattern can then be written to the
device by following the programming procedure.
For applications wherethe content is programmed
only one time and erasure is not required, the
M27C2001 is offered in PDIP32, PLCC32 and
TSOP32 (8 x 20 mm) packages.
Table 1. Signal Names
A0-A17 Address Inputs
Q0-Q7 Data Outputs
E Chip Enable
G Output Enable
LCCC32W (L)
PLCC32 (K) TSOP32 (N)
Figure 1. Logic Diagram
V
CC
18
A0-A17
P
E
G
M27C2001
V
8 x 20 mm
PP
8
Q0-Q7
P Program
V
PP
V
CC
V
SS
Program Supply
Supply Voltage
Ground
V
SS
AI00716B
1/16April 1999
M27C2001
Figure 2A. DIP Pin Connections
V
PP
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
Q0
Q2
SS
1
2
3
4
5
6
7
8
M27C2001
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
AI00717
V
CC
PA16
A17
A14
A13
A8
A9
A11
G
A10
E
Q7
Q6
Q5Q1
Q4
Q3V
Figure 2B. LCC Pin Connections
CC
VPPV
32
Q3
Q4
P
Q5
A7
A6
A5
A4
A3
A2
A1
A0
Q0
9
A12
A15
M27C2001
Q1
Q2
A16
1
17
SS
V
A17
25
Q6
A14
A13
A8
A9
A11
G
A10
E
Q7
AI00718
Figure 2C. TSOP Pin Connections
A11 G
A9
A8
A13
A14
A17
V
CC
V
PP
A16
A15
A12
A7
A6
A5
A4 A3
1
P
M27C2001
8
(Normal)
9
16 17
32
25
24
AI01153B
A10
E
Q7
Q6
Q5
Q4
Q3
V
SS
Q2
Q1
Q0
A0
A1
A2
The operationg modes of the M27C2001 are listed
in the Operating Modes table. A single power supply is required in the read mode. Allinputs are TTL
levels except for VPPand 12V on A9 for Electronic
Signature.
Read Mode
The M27C2001 has two control functions, both of
which must be logically active in order to obtain
data at the outputs. Chip Enable (E) is the power
control and should be used for device selection.
Output Enable (G) is the output control and should
be used to gate data to the output pins, independent of device selection. Assuming that the addresses are stable, the address access time
(t
) is equal to the delay from E to output
AVQV
(t
). Data is availableatthe output after a delay
ELQV
of t
from the falling edge of G, assuming that
GLQV
E has been low and the addresses have been stable for at least t
AVQV-tGLQV
.
Standby Mode
The M27C2001 has a standby mode which reduces the supply current from 30mA to 100µA. The
M27C2001 is placed in the standby mode by applying a CMOS high signalto the E input. When in
the standbymode, theoutputsarein a high impedance state, independent of the G input.
2/16
M27C2001
Table 2. Absolute Maximum Ratings
(1)
Symbol Parameter Value Unit
T
A
T
BIAS
T
STG
(2)
V
IO
V
CC
(2)
V
A9
V
PP
Note: 1. Except for the rating ”Operating Temperature Range”, stressesabove those listedin the Table ”Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above thoseindicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions forextended periods may affect device reliability. Refer alsoto theSTMicroelectronics SUREProgram and otherrelevant quality documents.
2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC
voltage on Output is V
3. Depends on range.
Ambient Operating Temperature
Temperature Under Bias –50 to 125 °C
Storage Temperature –65 to 150 °C
Input or Output Voltage (except A9) –2 to 7 V
Supply Voltage –2 to 7 V
A9 Voltage –2 to 13.5 V
Program Supply Voltage –2 to 14 V
+0.5V with possible overshoot to VCC+2V for a period less than 20ns.
CC
(3)
–40 to 125 °C
Table 3. OperatingModes
Mode E G P A9
Read
Output Disable V
Program
Verify V
Program Inhibit
Standby
Electronic Signature
Note: X = VIHor VIL,VID= 12V ± 0.5V.
V
IL
IL
V
IL
IL
V
IH
V
IH
V
IL
V
IL
V
IH
V
IH
V
IL
XX
XXV
VILPulse
V
IH
X
XVPPData Out
XXX
XXX
V
IL
V
IH
V
ID
V
PP
V
or V
CC
SS
or V
CC
SS
V
PP
V
PP
V
or V
CC
SS
V
CC
Q0-Q7
Data Out
Hi-Z
Data In
Hi-Z
Hi-Z
Codes
Table 4. Electronic Signature
Identifier A0 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Hex Data
Manufacturer’s Code
Device Code
V
IL
V
IH
Two Line Output Control
Because EPROMs are usually used in larger
memory arrays, this product features a 2 line control function which accommodates the use of multiple memory connection. The two line control
function allows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
will not occur.
00100000 20h
01100001 61h
For the most efficient use of these two control
lines, Eshould be decodedandused as the primary device selecting function, while G should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. Thisensures that all deselected memory devices are in their lowpower standby
mode and that the output pins are only active
when data is required from a particular memory
device.
3/16
M27C2001
Table 5. AC Measurement Conditions
High Speed Standard
Input Rise and Fall Times ≤ 10ns ≤ 20ns
Input Pulse Voltages 0 to 3V 0.4V to 2.4V
Input and Output Timing Ref. Voltages 1.5V 0.8V and 2V
Figure 3. AC Testing Input Output Waveform
High Speed
3V
1.5V
0V
Standard
2.4V
0.4V
Table 6. Capacitance
Symbol Parameter Test Condition Min Max Unit
C
IN
C
OUT
Note: 1. Sampled only, not 100% tested.
Input Capacitance
Output Capacitance V
(1)
(TA=25°C, f = 1 MHz)
2.0V
0.8V
AI01822
Figure 4. AC Testing Load Circuit
1.3V
1N914
3.3kΩ
DEVICE
UNDER
TEST
C
L
CL= 30pFfor High Speed
CL= 100pF for Standard
CLincludes JIG capacitance
V
=0V
IN
=0V 12 pF
OUT
6pF
OUT
AI01823B
System Considerations
The power switching characteristics of Advanced
CMOS EPROMs requirecareful decoupling of the
devices. The supply current, ICC, has three segments that are of interest to the system designer:
the standby current level, the active current level,
and transient current peaks that are produced by
the fallingand rising edges of E. The magnitude of
the transient current peaks is dependent on the
capacitive and inductive loading of the device at
the output.
The associated transient voltage peaks can be
suppressed by complying with the two line output
4/16
control and by properly selected decoupling capacitors. It is recommended that a 0.1µF ceramic
capacitor be used on every device between V
CC
and VSS. This should be a high frequency capacitor of low inherent inductance and should be
placed as close to the device as possible. In addition, a 4.7µF bulk electrolytic capacitor should be
used between VCCand VSSfor every eight devices. The bulk capacitor should be located near the
power supplyconnection point.Thepurposeof the
bulk capacitor is to overcome the voltage drop
caused by the inductive effects of PCB traces.
M27C2001
Table 7. Read Mode DC Characteristics
(1)
(TA = 0 to 70 °C or –40 to 85 °C; VCC=5V±5% or 5V ± 10%; VPP=VCC)
Symbol Parameter Test Condition Min Max Unit
I
I
I
CC
I
CC1
I
CC2
I
V
V
IH
V
Input Leakage Current
LI
Output Leakage Current
LO
Supply Current
I
OUT
0V ≤ V
0V ≤ V
E=V
Supply Current (Standby)TTL E = V
Supply Current (Standby)CMOS
Program Current
PP
Input Low Voltage –0.3 0.8 V
IL
(2)
Input High Voltage 2
Output Low Voltage
OL
E>V
I
≤ V
IN
CC
≤ V
OUT
CC
,G=VIL,
IL
= 0mA, f = 5MHz
IH
– 0.2V
CC
V
PP=VCC
= 2.1mA
OL
±10 µA
±10 µA
30 mA
1mA
100 µA
10 µA
V
+1
CC
0.4 V
Output High Voltage TTL IOH= –400µA 2.4 V
V
OH
Output High Voltage CMOS
Note: 1. VCCmust be applied simultaneously with or before VPPand removed simultaneously or after VPP.
2. Maximum DC voltage on Output is V
Table 8A. Read Mode AC Characteristics
CC
+0.5V.
(1)
I
= –100µAV
OH
CC
– 0.7V
(TA = 0 to 70 °C or –40 to 85 °C; VCC=5V±5% or 5V ± 10%; VPP=VCC)
M27V2001
Symbol Alt Parameter Test Condition
(3)
-55
Min Max Min Max Min Max Min Max
-70 -80 -90
V
V
Unit
Address Valid to
(2)
(2)
t
ACC
Output Valid
Chip Enable Low to
t
CE
Output Valid
Output Enable Low
t
OE
to Output Valid
Chip Enable High to
t
DF
Output Hi-Z
Output Enable High
t
DF
to Output Hi-Z
Address Transitionto
t
OH
Output Transition
t
AVQV
t
ELQV
t
GLQV
t
EHQZ
t
GHQZ
t
AXQX
Note: 1. VCCmust be applied simultaneously with or before VPPand removed simultaneously or after VPP.
2. Sampled only, not 100% tested.
3. In case of 45ns speed see High Speed AC measurament conditions.
E=V
G=V
G=V
E=V
,G=V
IL
E=V
E=V
,G=V
IL
IL
IL
IL
IL
IL
IL
55 70 80 90 ns
55 70 80 90 ns
30 35 40 40 ns
0 30 0 30 0 30 0 30 ns
0 30 0 30 0 30 0 30 ns
0000ns
5/16
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