SGS Thomson Microelectronics M27C160 Datasheet
M27C160
16 Mbit (2Mb x8 or 1Mb x16) UV EPROM and OTP EPROM
■ 5V ± 10% SUPPLY VOLTAGE in READ
OPERATION
■ FAST ACCESS TIME: 70ns
■ BYTE-WIDE or WORD-WIDE
CONFIGURABLE
■ 16 Mbit MASK ROM REPLACEMENT
■ LOW POWER CONSUMPTION
– Active Current 70mA at 8MHz
– Standby Current 100µA
■ PROGRAMMING VOLTAGE: 12.5V ± 0.25V
■ PROGRAMMING TIME: 100µs/byte (typical)
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code: 00B1h
42
1
FDIP42W (F)
PLCC44 (K)
42
1
PDIP42 (B)
44
SO44 (M)
1
DESCRIPTION
The M27C160 is a 16 Mbit EPROM offered in the
two ranges UV (ultra violet erase) and OTP (one
time programmable). It is ideally suited for microprocessor systems requiringlargedataorprogram
storage and is organised as either 2 Mbit words of
8 bit or 1 Mbit words of 16 bit. The pin-out is compatible with a 16 Mbit Mask ROM.
The FDIP42W (window ceramic frit-seal package)
has a transparent lid which allows the user to expose the chipto ultraviolet lightto erase thebitpattern.
Table 1. Signal Names
A0-A19 Address Inputs
Q0-Q7 Data Outputs
Q8-Q14 Data Outputs
Q15A–1 Data Output / Address Input
E Chip Enable
G
BYTEV
V
CC
V
SS
PP
Output Enable
Byte Mode / Program Supply
Supply Voltage
Ground
Figure 1. Logic Diagram
V
CC
20
A0-A19
BYTEV
E
G
PP
M27C160
V
SS
Q15A–1
15
Q0-Q14
AI00739B
1/16February 1999
M27C160
Figure 2A. DIP Pin Connections
A18 A19
1
2
A7
3
A6
4
A5
5
6
A4
7
A3
A2
8
9
A1
10
V
SS
Q0
Q8
Q1
Q9
Q10
Q3
Q11
A0
M27C160
11
E
12
13
G
14
15
16
17
18
19
20
21
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
AI00740
A8A17
A9
A10
A11
A12
A13
A14
A15
A16
BYTEV
V
SS
Q15A-1
Q7
Q14
Q6
Q13
Q5Q2
Q12
Q4
V
CC
PP
Figure 2B. PLCC Pin Connections
SS
A18
A5
A6
A4
A3
A2
A1 A15
A0
E
12
V
SS
Q0
Q8
Q1
Q9
Q2
Q10
V
1
M27C160
23
Q3
NC
Q11
44
V
CC
A17A8A19
A7
Q4
A9
Q12
A10
Q5
A11
34
Q13
A12
A13
A14
A16
BYTEV
V
SS
Q15A–1G
Q7
Q14
Q6
AI03012
PP
Figure 2C. SO Pin Connections
1
NC NC
2
A17 A8
V
Q10
Q11
A7
A6
A5
A4
A3
A2
A1
A0
SS
Q0
Q8
Q9
Q3
3
4
5
6
7
8
9
10
11
M27C160
12
E
13
14
G
15
16
17Q1
18
19
20
21
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
2322
AI01264
A19A18
A9
A10
A11
A12
A13
A14
A15
A16
BYTEV
V
SS
Q15A-1
Q7
Q14
Q6
Q13
Q5Q2
Q12
Q4
V
CC
PP
Warning: NC = Not Connected.
Anew patterncanthenbewrittenrapidly to the device by following the programming procedure.
For applications where the content is programmed
only one time and erasure is not required, the
M27C160 is offered in PDIP42, PLCC44 and
SO44 packages.
DEVICE OPERATION
The operating modes of the M27C160 are listed in
the Operating Modes Table.Asinglepowersupply
is required in the read mode. All inputs are TTL
compatible except for VPPand 12V on A9 for the
Electronic Signature.
Read Mode
The M27C160 has two organisations, Word-wide
and Byte-wide.The organisation is selected bythe
signal level on the BYTEVPPpin. When BYTEV
PP
is at VIHthe Word-wide organisation is selected
and the Q15A–1 pin is used for Q15 Data Output.
When the BYTEVPPpinis at VILthe Byte-wide organisation is selected and the Q15A–1 pin isused
for the Address Input A–1. When the memory is
logically regarded as 16 bit wide, but read in the
Byte-wide organisation, then with A–1 at VILthe
lower 8 bits of the 16 bit data are selected and with
A–1 at VIHthe upper 8 bits of the 16 bit data are
selected.
2/16
M27C160
Table 2. Absolute Maximum Ratings
(1)
Symbol Parameter Value Unit
T
A
T
BIAS
T
STG
(2)
V
IO
V
CC
(2)
V
A9
V
PP
Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only and operation of thedevice at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program andother relevant quality documents.
2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC
voltage on Output is V
3. Depends on range.
Ambient Operating Temperature
Temperature Under Bias –50 to 125 °C
Storage Temperature –65 to 150 °C
Input or Output Voltage (except A9) –2 to 7 V
Supply Voltage –2 to 7 V
A9 Voltage –2 to 13.5 V
Program Supply Voltage –2 to 14 V
+0.5V with possible overshoot to VCC+2V for a period less than 20ns.
CC
(3)
–40 to 125 °C
Table 3. Operating Modes
Mode E G
Read Word-wide
Read Byte-wide Upper V
Read Byte-wide Lower
Output Disable V
Program
V
Verify
Program Inhibit
Standby
Electronic Signature
Note: X = VIHor VIL,VID= 12V ± 0.5V.
V
IL
IL
V
IL
IL
Pulse V
IL
V
IH
V
IH
V
IH
V
IL
V
V
V
V
V
V
X X X Hi-Z Hi-Z Hi-Z
V
BYTEV
PP
IL
IL
IL
IH
IH
IL
IH
IL
V
IH
V
IL
V
IL
X X Hi-Z Hi-Z Hi-Z
V
PP
V
PP
V
PP
V
IH
A9 Q0-Q7 Q8-Q14 Q15A–1
X Data Out Data Out Data Out
X Data Out Hi-Z V
X Data Out Hi-Z
IH
V
IL
X Data In Data In Data In
X Data Out Data Out Data Out
X Hi-Z Hi-Z Hi-Z
V
ID
Codes Codes Code
Table 4. Electronic Signature
Identifier A0 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Hex Data
Manufacturer’s Code V
Device Code
Note: Outputs Q8-Q15 are set to ’0’.
IL
V
IH
The M27C160 has two control functions, both of
which must be logically active in order to obtain
data at the outputs. In addition the Word-wide or
Byte- wide organisation must be selected.
Chip Enable (E) is the powercontrolandshould be
used fordeviceselection. Output Enable (G) is the
output control and should be used to gate data to
00100000 20h
10110001 B1h
the output pins independent of device selection.
Assuming that the addresses are stable, the address access time (t
from E to output (t
ELQV
output after a delay of t
) is equal to the delay
AVQV
). Data is available at the
from the falling edge
GLQV
of G, assuming that E has been low and the addresseshavebeenstablefor at least t
AVQV-tGLQV
3/16
.
M27C160
Table 5. AC Measurement Conditions
High Speed Standard
Input Rise and Fall Times ≤ 10ns ≤ 20ns
Input Pulse Voltages 0 to 3V 0.4V to 2.4V
Input and Output Timing Ref. Voltages 1.5V 0.8V and 2V
Figure 3. Testing Input Output Waveform
High Speed
3V
1.5V
0V
Standard
2.4V
0.4V
Table 6. Capacitance
Symbol Parameter Test Condition Min Max Unit
C
IN
C
OUT
Note: 1. Sampled only, not 100% tested.
(1)
(TA=25°C, f = 1 MHz)
Input Capacitance (except BYTEVPP)V
Input Capacitance (BYTEV
Output Capacitance
2.0V
0.8V
AI01822
)V
PP
Figure 4. AC Testing Load Circuit
1.3V
1N914
3.3kΩ
DEVICE
UNDER
TEST
C
L
CL= 30pF for High Speed
CL= 100pF for Standard
CLincludes JIG capacitance
=0V
IN
= 0V 120 pF
IN
V
=0V
OUT
10 pF
12 pF
OUT
AI01823B
Standby Mode
The M27C160 has astandby mode which reduces
the active current from 50mA to 100µA. The
M27C160 is placed in the standby mode by applying a CMOS high signal to the Einput. When in the
standby mode, the outputs are in a high impedance state, independent of the G input.
Two Line Output Control
Because EPROMs are usually used in larger
memory arrays, this product features a 2 line control function which accommodates the use of multiple memory connection. The two line control
function allows:
4/16
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
will not occur.
For the most efficient use of these two control
lines, Eshould be decodedand used as the primary device selecting function, while G should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. Thisensures that all deselected memory devices are in their lowpower standby
mode and that the output pins are only active
when data is required from a particular memory
device.
M27C160
Table 7. Read Mode DC Characteristics
(1)
(TA= 0 to 70 °C or –40 to 85 °C; VCC=5V±5% or 5V ± 10%; VPP=VCC)
Symbol Parameter Test Condition Min Max Unit
I
I
I
CC
I
CC1
I
CC2
I
V
V
IH
V
V
Note: 1. VCCmust be applied simultaneously with or before VPPand removed simultaneously or after VPP.
Input Leakage Current
LI
Output Leakage Current
LO
Supply Current
Supply Current (Standby) TTL
Supply Current (Standby) CMOS
Program Current
PP
Input Low Voltage –0.3 0.8 V
IL
(2)
Input High Voltage 2
Output Low Voltage
OL
Output High Voltage TTL
OH
2. Maximum DC voltage on Output is V
CC
+0.5V.
I
OUT
I
OUT
0V ≤ V
0V ≤ V
E=V
E=V
E>V
I
OH
≤ V
IN
CC
≤ V
OUT
IL
= 0mA, f = 8MHz
IL
= 0mA, f = 5MHz
E=V
CC
V
PP=VCC
I
= 2.1mA
OL
= –400µA
CC
,G=VIL,
,G=VIL,
IH
– 0.2V
2.4 V
±1 µA
±10 µA
70 mA
50 mA
1mA
100 µA
10 µA
V
+1
CC
0.4 V
V
System Considerations
The power switching characteristics of Advanced
CMOS EPROMs require carefull decoupliing of
the suppliesto the devices. Thesupply current I
CC
has three segments of importance to the system
designer: the standby current, the active current
and the transient peaks that are produced by the
falling and rising edges of E.
The magnitude of the transient current peaks is
dependant on the capacititive and inductive loading of the device outputs. The associated transient
voltage peaks can be supressed by complying
with thetwo line output control andby properly selected decoupling capacitors. It is recommended
that a 0.1µF ceramic capacitor is used on every
device between VCCand VSS. This should be a
high frequency type of low inherent inductance
and should be placed as close as possible to the
device. In addition, a 4.7µF electrolytic capacitor
should be used between VCCand VSSfor every
eight devices.
This capacitor should be mounted near the power
supply connection point. The purpose of this capacitor is to overcome the voltage drop caused by
the inductive effects of PCB traces.
Programming
When delivered (and after each erasure for UV
EPROM), all bits of the M27C160 are in the ’1’
state. Data is introduced by selectively programming ’0’s into the desired bit locations. Although
only ’0’s will be programmed, both ’1’s and ’0’s can
be present in the data word. The only way to
change a ’0’ to a ’1’ is by die exposition to ultraviolet light (UV EPROM).The M27C160 is in the programming mode when VPPinput is at 12.5V, G is
at VIHand E is pulsed to VIL. The data to be programmedis applied to 16 bitsin parallel to the data
output pins. The levels required for the address
and data inputs are TTL. VCCis specified to be
6.25V ± 0.25V.
5/16
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