SGS Thomson Microelectronics M25P80-V, M25P80 Datasheet

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PRELIMINARY DATA

December 2002

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

M25P80

8 Mbit, Low Voltage, Serial Flash Memory

With 25 MHz SPI Bus Interface

FEATURES SUMMARY

■ 8 Mbit of Flash Memory

■ Page Program (up to 256 Bytes) in 1.5ms

(typical)

■ Sector Erase (512 Kbit) in 2 s (typical)

■ Bulk Erase (8 Mbit) in 10 s (typical)

■ 2.7 V to 3.6 V Single Supply Voltage

■ SPI Bus Compatible Serial Interface

■ 25 MHz Clock Rate (maximum)

■ Deep Power-down Mode 1 µA (typical)

■ Electronic Signature (13h)

■ More than 100,000 Erase/Program Cycles per

Sector

■ More than 20 Year Data Retention

Figure 1. Packages

SO8 (MW)

200 mil width

VFQFPN8 (MP)

(MLP8)

M25P80

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SUMMARY DESCRIPTION

The M25P80 is a 8 Mbit (1M x 8) Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI -compatible bus.

The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction.

The memory is organized as 16 sectors, each containing 256 pages. E ach page is 25 6 bytes wide. Thus, the whole memory can be viewed as consisting of 4096 pages, or 1,048,576 bytes.

The whole memory can be eras ed using the B ulk Erase instruction, or a sector at a time, us ing the Sector Erase instruction.

Figure 2. Logic Diagram

Figure 3. SO and VFQFPN Connections

Note: 1. See page 31 (onwards) for package dimensions, and how

to identify pin-1.

Table 1. Signal Names

AI04964

M25P80

HOLD

AI04965B

2 3 4

8 7 6 5

HOLDQ

M25P80

C Serial Clock D Serial Data Input Q Serial Data Output

Chip Select

Write Protect

HOLD

Hold

Supply Voltage

Ground

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M25P80

SIGNAL DESCRIPTION Serial Data Output (Q). This output signal is

used to transfer data serially out of the device. Data is shifted out on the falling edge of Serial Clock (C).

Serial Data Input (D). This input signal is used to transfer data serially into the device. It receives instructions, addresses, and the data to be programmed. Values are latched on the rising edge of Serial Clock (C).

Serial Clock (C). This input signal provides the timing of the serial interface. Instructions, addresses, or data present at Serial Data Input (D) are latched on the rising edge of Serial Clock (C). Data on Serial Data Output (Q) changes after the falling edge of Serial Clock (C).

Chip Select (S

). When this input signal is High,

the device is des elected and Serial Data Output (Q) is at high impedance. Unless an internal Program, Erase or Write Status Register cycle is in progress, the device will b e in the Standby m ode

(this is not the Deep Power-down mode). Driving Chip Selec t ( S

) Low enables the device, placing it

in the active power mode. After Power-up, a falling edge on Chip Select (S

)

is required prior to the start of any instruction.

Hold (HOLD

). The Hold (HOLD) signal is used to

pause any serial communications with the device without deselecting the device.

During the Hold condition, the Serial Data Output (Q) is high impedanc e, and Serial D ata Input (D) and Serial Clock (C) are Don’t Care.

To start the Hold condition, the device must be selected, wit h C hip S e lec t (S

) driven Low.

Write Protect (W

). The main purpose of this in-

put signal is to freeze the size of the area of memory that is protected against program or erase instructions (as specified by the values in the BP2, BP1 and BP0 bits of the Status Register).

M25P80

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SPI MODES

These devices can be drive n by a microcont roller with its SPI peripheral running in either of the two following modes:

– CPOL=0, CPHA=0 – CPOL=1, CPHA=1 For these two modes, input dat a is latched in on

the rising edge of Serial Clock (C), and output data

is avai lable from the falling edge of Serial Cloc k (C).

The difference between the two modes, as shown in Figure 5, is the clock polarity when the bus master is in Stand-by mode and not transferring data:

– C remains at 0 for (CPOL=0, CPHA=0) – C remains at 1 for (CPOL=1, CPHA=1)

Figure 4. Bus Master and Memory Devices on the SPI Bus

Note: 1. The Write Protect (W) and Hold (HOLD) signals should be driven, High or Low as approp ri ate.

Figure 5. SPI Modes Sup po rt ed

AI03746D

Bus Master

(ST6, ST7, ST9,

ST10, Others)

SPI Memory

Device

SDO SDI SCK

CQD

SPI Memory

Device

CQD

SPI Memory

Device

CQD

CS3 CS2 CS1

SPI Interface with

(CPOL, CPHA) =

(0, 0) or (1, 1)

HOLD

AI01438B

MSB

CPHA

CPOL

MSB

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M25P80

OPERATING FEATURES Page Prog ram m i ng

To program one data byte, two instructions are required: Write Enable (WREN), which is one by te, and a Page Program (PP) sequence, which consists of four bytes plus data. This is followed by the internal Program cycle (of duration t

To spread this overhead, the Page P rogram (PP) instruction allows up to 256 bytes to be programmed at a time (changing bits from 1 to 0), provided that they lie in consecutive addresses on the same page of memory.

Sector Erase and Bulk Erase

The Page Program (PP) instruction allows bits to be reset from 1 to 0. Before this can be applied, the bytes of memory need to have been e rased to a ll 1s (FFh). This can be achieved either a sector at a time, using the Sector Erase (SE) instruction, or throughout the entire memory, using the Bulk Erase (BE) instruction. This starts an internal Erase cycle (of duration t

or tBE).

The Erase instruction must be preceeded by a Write Enable (WREN) instruction.

Polling During a Write, Program or Erase Cycle

A further improvement in the time to Write Status Register (WRSR), Program (PP) or Erase (SE or BE) can be achieved by n ot waiting for the worst case delay (t

, tPP, tSE, or tBE). The Write In Progress (WIP) bit is provided in the Status Register so that the application program can monitor its value, polling it to establish when the previous Write cycle, Program cycle or Erase cycle is complete.

Active Power, Stand-by Power and De ep Power-Down Modes

When Chip Select (S) is Low, the device is enabled, and in the Active Power mode.

When Chip Select (S

) is High, the device is disabled, but could remain in the Active Power mode until all internal cycles have completed (Pro gram, Erase, Write Status Register). The device then goes in to the Stand-by P ower mode. T he device consumption drops to I

CC1

The Deep Power-down mode is entered when the specific instruction (the Enter Deep Power-down Mode (DP) instruction) is executed. The device consumption drops further to I

CC2

. The device remains in this mode until another specific instruction (the Release from Deep Power-down Mode and Read Electronic S ignature (RES ) instruction) is executed.

All other instructions are ignored while the device is in the Deep Power-down mode. This can be used as an extra software protection mecha nism, when the device is not in active use, to protect the device from inadvertant Write, Program or Erase instructions.

Status Register

The Status Register contains a num ber of status and control bits that can be read or set (as appropriate) by specific instructions.

WIP bit. The Write In Progress (WIP) bit indicates whether the memory is busy with a Write Sta tus Register, Program or Erase cycle.

WEL bit. Th e Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch.

BP2, BP1, BP0 bits. The Block Protect (BP2, BP1, BP0) bits are non-volatile. They define the size of the area to be software protected against Program and Erase instructions.

SRWD bit. The Status Register Write Disable (SRWD) bit is operated in conjunction with the Write Protect (W

) signal. The Status Register

Write Disable (SRWD) bit an d Write Protect (W

) signal allow the device to be put in the Hardware Protected mode. In this mode, the non-volatile bits of the Status Register (SRWD, BP2, BP1, BP0) become read-only bits.

M25P80

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Protection Modes

The environments where non-volatile memory devices are used can be v ery noisy. No SPI device can operate correctly in the presence of excessive noise. To help combat this, the M25P80 boasts the following data protection mechanisms:

■ Power-On Reset and an internal timer (t

PUW

) can provide protection against inadvertant changes while the power supply is outside the operating specification.

■ Program, Erase and Write Status Register

instructions are checked that they consist of a number of clock pulses that is a multiple of eight, before they are accepted for execution.

■ All instructions that modify data must be

preceded by a Write Enable (WREN) instruction to set the Write Enable Latch (WEL) bit . This bit is returned to its reset state by the following events:

– Power-up – Write Disable (WRDI) instruction completion

– Write Status Register (WRSR) instruction

completion – Page Program (PP) instruction completion – Sector Erase (SE) instruction completion – Bulk Erase (BE) instruction completion

■ The Block Protect (BP2, BP1, BP0) bits allow

part of the memory to be configured as readonly. This is the Software Protected Mode (SPM).

■ The Write Protect (W) signal allows the Block

Protect (BP2, BP1, BP0) bits and Status Register Write Disable (SRWD) bit to be protected. This is the Hardware Protected Mode (HPM).

■ In addition to the low power consumption

feature, the Deep Power-down mode offers extra software protection from inadvertant Write, Program and Erase instructions, as all instructions are ignored except one particular instruction (the Release from Deep Powerdown instruction).

Table 2. Protected Area Sizes

Note: 1. The device is ready to accept a Bu l k E rase instruction if, and only if, all Bl ock Protect (BP2, BP1, BP0) are 0.

Status Register

Content

Memory Content

BP2

Bit

BP1

Bit

BP0

Bit

Protected Area Unprotected Area

0 0 0 none

All sectors

(sixteen sectors: 0 to 15) 0 0 1 Upper sixteenth (Sector 15) Lower fifteen-sixteenths (fifteen sectors: 0 to 14) 0 1 0 Upper eighth (two sectors: 14 and 15) Lower seven-eighths (fourteen sectors: 0 to 13) 0 1 1 Upper quarter (four sectors: 12 to 15) Lower three-quarters (twelve sectors: 0 to 11) 1 0 0 Upper half (eight sectors: 8 to 15) Lower half (eight sectors: 0 to 7) 1 0 1 All sectors (sixteen sectors: 0 to 15) none 1 1 0 All sectors (sixteen sectors: 0 to 15) none 1 1 1 All sectors (sixteen sectors: 0 to 15) none

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M25P80

Hold Condition

The Hold (HOLD

) signal is used to pause any serial communications with the device without resetting the clocking sequence. However, taking this signal Low does not terminate any Write Status Register, Program or Erase cycle that is currently in progress.

To enter the Hold condition, the device must be selecte d, w it h C h ip Select ( S

) Low.

The Hold condition starts on the falling edge of the Hold (HOLD

) signal, provided that this coincides with Serial Clock (C) being Low (as shown in Figure 6).

The Hold condition ends on the rising edge of the Hold (HOLD

) signal, provided that this coincides with Serial Clock (C) being Low.

If the falling edge does not coincide with Serial Clock (C) being Low, the Hold condition starts after Serial Clock (C) next goes Low. Similarly, if the

rising edge does not coincide with Serial Clock (C) being Low, the Hold condition ends after Serial Clock (C) next goes Low. (This is shown in Figure

6). During the Hold condition, the Serial Data Output

(Q) is high impedanc e, and Serial D ata Input (D) and Serial Clock (C) are Don’t Care.

Normally, the device is kept selected, with C hip Select (S

) driven Low, for the whole duration of the Hold condition. This is to en sure that the state of the internal logic remains unchanged from the moment of entering the Hold condition.

If Chip Select (S

) goes High while the d ev ice is in the Hold condition, this has the effect of reset ting the internal logic of the device. To restart communication with the device, it is necessary to drive Hold (HOLD

) High, and then to drive Chip Select

) Low. This prevents the device from going back

to the Hold condition.

Figure 6. Hold Condition Activation

AI02029D

HOLD

Hold

Condition

(standard use)

Hold

Condition

(non-standard use)

M25P80

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MEMORY OR GANIZATION

The memory is organized as:

■ 1,048,576 bytes (8 bits each)

■ 16 sectors (512 Kbits, 65536 bytes each)

■ 4096 pages (256 bytes each).

Each page can be individually programmed (bits are programmed from 1 to 0). The device is Sector or Bulk Erasable (bits are erased from 0 to 1) but not Page Erasable.

Table 3. Memory Organi zation

Sector Address Range

15 F0000h FFFFFh 14 E0000h EFFFFh 13 D0000h DFFFFh 12 C0000h CFFFFh 11 B0000h BFFFFh 10 A0000h AFFFFh

9 90000h 9FFFFh 8 80000h 8FFFFh 7 70000h 7FFFFh 6 60000h 6FFFFh 5 50000h 5FFFFh 4 40000h 4FFFFh 3 30000h 3FFFFh 2 20000h 2FFFFh 1 10000h 1FFFFh 0 00000h 0FFFFh

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M25P80

Figure 7. Block Diagram

AI04987

HOLD

Control Logic

High Voltage

Generator

I/O Shift Register

Address Register

and Counter

256 Byte

Data Buffer

256 Bytes (Page Size)

X Decoder

Y Decoder

Size of the

read-only

memory area

Status

00000h

FFFFFh

000FFh

M25P80

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INSTRUCTIONS

All instructions, addresses and data are shifted in and out of the device, most significant bit first.

Serial Data Input (D) is sampled on the first rising edge of Serial Clock (C) a fter Chip Select (S

) is driven Low. Then, the one-byte instruction code must be shifted in to the device, most significant bit first, on Serial Data Input (D), each bit being latched on the rising edges of Serial Clock (C).

The instruction set is listed in Table 4. Every instruction sequence starts with a one-byte

instruction code. Depending on the instruction, this might be followed by address bytes, or by data bytes, or by both or none. Chip Select (S

) must be driven High after the last bit of the instruction sequence has been shifted in.

In the case of a Read Data Bytes (READ), Read Data Bytes at Higher Speed (Fast_Read), Read Status Register (RDSR) or Release from Deep Power-down, and Read Electronic Signature

(RES) instruction, the shifted-in instruction sequence is followed by a data-out sequ ence. Chip Selec t (S

) can be driven High after any bit of the

data-out sequence is being shifted out. In the case of a Page Program (PP), Sector Erase

(SE), Bulk Erase (BE), Write Status Register (WRSR), Write Enable (WREN), Write Disable (WRDI) or Deep Power-down (DP) instruction, Chip Sele ct (S

) must be driven High exactly at a byte boundary, otherwise the inst ruction is rejected, and is not executed. That is, Chip Select (S

) must driven High when the number of clock pulses after Chip Select (S

) being driven Low is an exact

multiple of eight. All attempts to access the memory array during a

Write Status Register cycle, Program cycle or Erase cycle are ignored, and the internal Write Status Register cycle, Program cycle or Erase cycle continues unaffected.

Table 4. Instruction Set

Instruction Description One-byte Instruction Code

Address

Bytes

Dummy

Bytes

Data

Bytes

WREN Write Enable 0000 0110 0 0 0

WRDI Write Disable 0000 0100 0 0 0

RDSR Read Status Register 0000 0101 0 0 1 to

∞

WRSR Write Status Register 0000 0001 0 0 1

READ Read Data Bytes 0000 0011 3 0 1 to

∞

FAST_READ Read Data Bytes at Higher Speed 0000 1011 3 1 1 to

∞

PP Page Program 0000 0010 3 0 1 to 256 SE Sector Erase 1101 1000 3 0 0 BE Bulk Erase 1100 0111 0 0 0 DP Deep Power-down 1011 1001 0 0 0

RES

Release from Deep Power-down, and Read Electronic Signature

1010 1011

0 3 1 to

∞

Release from Deep Power-down 0 0 0

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M25P80

Figure 8. Write Enable (WREN) Instruction Sequenc e

Write Enable (WREN)

The Write Enable (WREN) instruction (Figure 8) sets the Write Enable Latch (WEL) bit.

The Write Enable Latch (WEL) bit must be set prior to every Page Program (PP), Sector Erase

(SE), Bulk Erase (BE) and Write Status Register (WRSR) instruction.

The Write Enable (WREN) instruction is entered by driving Chip Select (S

) Low, sending the in-

struction code, and then driving Chip Select (S

) High.

Figure 9. Write Disable (WRDI) Instruction Sequence

Write Disable (WRDI)

The Write Disable (WRDI) instruction (Figure 9) resets the Write Enable Latch (WEL) bit.

The Write Disable (WRDI) instruction is entered by driving Ch ip Select (S

) Low, sending the instruc-

tion code, and then driving Chip Select (S

) High.

The Write Enable Latch (WEL) bit is reset under the following conditions:

– Power-up – Write Disable (WRDI) instruction completion – Write Status Register (WRSR) instruction com-

pletion – Page Program (PP) instruction completion – Sector Erase (SE) instruction completion – Bulk Erase (BE) instruction completion

AI02281E

21 34567

High Impedance

Instruction

AI03750D

21 34567

High Impedance

Instruction

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