The BTA/BTB04 T/D/S/A triac family are high performance glass passivated PNPN devices.
These parts are suitables for general purpose applications where gate high sensitivity is required.
Application on 4Q such as phase control and static
switching.
BTB04 T/D/S/A
SENSITIVE GATE TRIACS
A2
G
A1
A1
A2
G
TO-220AB
ABSOLUTE RATINGS (limiting values)
SymbolParameterValueUnit
I
T(RMS)
I
TSM
2
I
dI/dtCritical rate of rise of on-state current
Tstg
Tj
TlMaximum lead soldering temperature during 10s at 4.5mm from case260°C
SymbolParameter
V
DRM
V
RRM
RMS on-state current (360° conduction angle)BTATc = 90°C4A
BTBTc = 95°C
Non repetitive surge peak on-state current
(Tj initial = 25°C)
tI
2
t valuetp = 10ms8A2s
Gate supply: I
Storage and operating junction temperature range-40 to +150
= 50mA dIG/dt = 0.1A/µs
G
400 T/D/S/A600 T/D/S/A700 T/D/S/A
Repetitive peak off-state voltage Tj = 110°C
tp = 8.3ms42A
tp = 10ms40
Repetitive
F = 50Hz
Non repetitive50
-40 to +110
BTA / BTB04-
400600700V
10A/µs
°C
Unit
September 2001 - Ed: 1A
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BTA04 T/D/S/A BTB04 T/D/S/A
THERMAL RESISTANCE
SymbolParameterValueUnit
Rth (j-a)Junction to ambient60°C/W
Rth (j-c) DCJunctiontocaseforDCBTA4.4°C/W
BTB3.2
Rth (j-c) ACJunction to case for 360° conduction angle (F = 50Hz)BTA3.3°C/W
VD= 12V (DC) RL=33ΩTj = 25°CI - II - IIIMAX.551010mA
IVMAX.5101025
V
GT
V
GD
tgtVD=V
I
VD= 12V (DC) RL=33ΩTj = 25°CI - II - III - IVMAX.1.5V
VD=V
DRM
DRMIG
dI
/dt = 0.5A/µs
G
IG= 1.2I
L
GT
RL= 3.3kΩTj =110°CI - II - III - IVMIN.0.2V
= 40mA
Tj = 25°CI - II-III-IVTYP.2µs
Tj = 25°CI - III - IVTYP.10102020mA
II20204040
*I
I
H
= 100mA Gate openTj = 25°CMAX.15152525mA
T
VTM*ITM= 5.5Atp = 380µsTj = 25°CMAX.1.65V
I
DRM
I
RRM
V
V
DRM
RRM
rated
rated
Tj = 25°CMAX.0.01mA
Tj = 110°CMAX.0.75
dV/dt *Linearslopeupto
VD= 67% V
DRM
gate open
Tj = 110°CTYP.1010--V/µs
MIN.--1010
Unit
(dI/dt)c*(dI/dt)c = 1.8A/msTj = 110°CTYP.1155V/µs
* For either polarity of electrode A2voltage with reference to electrode A
1
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PRODUCT INFORMATION
BTA04 T/D/S/A BTB04 T/D/S/A
I
Package
BTA
(Insulated)
BTB
(Uninsulated)
ORDERING INFORMATION
T(RMS)
AVTDSA
4400XX
Triac
Series
Insulation:
A: insulated
B: non insulated
Current: 04A
V
DRM/VRRM
600XX
700XX
400XX
600XX
Sensitivity Specification
BT A 04 - 400T
Sensitivity
Voltage:
400: 400V
600: 600V
700: 700V
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BTA04 T/D/S/A BTB04 T/D/S/A
Fig. 1: Maximum RMS power dissipation versus
RMS on-state current (F = 50Hz).(Curves are cut
off by (dI/dt)c limitation)
Fig. 3: Correlation between maximum RMS power
dissipation and maximum allowable temperature
(TambandTcase)for different thermalresistances
heatsink + contact (BTB).
Fig. 2: Correlation between maximum RMS power
dissipation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact (BTA).
Fig. 4: RMS on-state current versus case temperature.
Fig. 5: Relative variation of thermal impedance
versus pulse duration.
Zth/Rth
1
Zth(j-c)
0.1
0.01
1E-31E-21E-11E+01E+11E+2 5E+2
4/6
Zth(j-a)
tp(s)
Fig. 6: Relative variation of gate trigger current
and holding current versus junction temperature.
BTA04 T/D/S/A BTB04 T/D/S/A
Fig. 7: Non repetitive surge peak on-state current
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