SGS Thomson Microelectronics BTA40-800B, BTA40-800A, BTA40-700B, BTA40-700A, BTA40-600B Datasheet
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BTA40 A/B
March 1995
STANDARDTRIACS
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current
(360° conduction angle)
Tc = 75 °C40 A
I
TSM
Non repetitive surge peak on-state current
( Tj initial = 25°C)
tp = 8.3 ms 315 A
tp = 10 ms 300
I2tI
2
t value tp = 10 ms 450 A2s
dI/dt Critical rate of rise of on-state current
Gate supply : IG= 500mA diG/dt = 1A/µs
Repetitive
F = 50 Hz
10 A/µs
Non
Repetitive
50
Tstg
Tj
Storage and operating junction temperature range - 40 to + 150
- 40 to + 125
°C
°C
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260 °C
RD91
(Plastic)
.HIGHSURGECURRENT CAPABILITY
.COMMUTATION : (dV/dt)c>10V/µs
.BTA Family :
INSULATINGVOLTAGE= 2500V
(RMS)
(ULRECOGNIZED: E81734)
DESCRIPTION
Symbol Parameter BTA40-... A/B Unit
400 600 700 800
V
DRM
V
RRM
Repetitive peak off-state voltage
Tj = 125 °C
400 600 700 800 V
ABSOLUTE RATINGS (limitingvalues)
FEATURES
The BTA40 A/B triac family are high performance
glass passivated PNPN devices.
These parts are suitables for general purpose applications where high surge current capability is required. Application such as phase control and
static switching on inductive or resistiveload.
A
2
G
A
1
1/5
GATECHARACTERISTICS (maximum values)
Symbol Parameter Value Unit
Rth (j-c) DC Junction to case for DC 1.2 °C/W
Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) 0.9 °C/W
Symbol Test Conditions Quadrant Suffix Unit
AB
IGTVD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 100 50 mA
IV MAX 150 100
V
GT
VD=12V (DC) RL=33Ω Tj=25°C I-II-III-IV MAX 1.5 V
V
GD
VD=V
DRMRL
=3.3kΩ Tj=125°C I-II-III-IV MIN 0.2 V
tgt VD=V
DRMIG
= 500mA
dIG/dt = 3A/µs
Tj=25°C I-II-III-IV TYP 2.5 µs
I
L
IG=1.2 I
GT
Tj=25°C I-III-IV TYP 70 60 mA
II 200 180
IH*I
T
= 500mA gate open Tj=25°C MAX 100 80 mA
VTM*ITM= 60A tp= 380µs Tj=25°C MAX 1.8 V
I
DRM
I
RRM
V
DRM
Rated
V
RRM
Rated
Tj=25°C MAX 0.01 mA
Tj=125°C MAX 6
dV/dt * Linear slope up to VD=67%V
DRM
gate open
Tj=125°C MIN 250 V/µs
(dV/dt)c * (dI/dt)c = 18A/ms Tj=125°C MIN 10 V/µs
* For either polarity of electrode A2voltage with reference to electrode A1.
P
G (AV)
=1W PGM= 40W (tp = 20 µs) IGM=8A(tp=20µs) VGM= 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
BTA40 A/B
2/5
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