DESCRIPTION
The BFY50 and BFY52 are silicon planar
epitaxial NPN transistors in Jedec TO-39 metal
case. They are intended for general purpose
linear and switching applications.
BFY50/51
MEDIUM POWER AMPLIFIER
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
BFY50 BFY51
V
V
V
I
P
T
Collector-Base Voltage (IE=0) 80 60 V
CBO
Collector-Emitter Voltage (IB=0) 35 30 V
CEO
Emitter-Base Voltage (IC=0) 6 V
EBO
Collect or Current 1 A
I
C
Collect or Peak Current (tp<5ms) 1.5 A
CM
Total Dissipation at T
tot
Stora ge Temper at u re -65 to 200
stg
Max. Operati ng J unc t i on Temper at u re 200
T
j
at T
amb
case
≤ 25oC
≤ 25oC
0.8
5
W
W
o
C
o
C
November 1997
1/5
BFY50/BFY51
THERMAL DATA
R
thj-case
R
thj- amb
Ther mal Resist ance Junct ion-Case Max
Thermal Resistance Junction-Ambient Max
35
218
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
I
CBO
Collector Cut- of f
Current (I
E
=0)
for BFY50
VCB=60V
=60V T
V
CB
cas e
=100oC
50
2.5
for BFY51
50
2.5
50
2.5
I
V
(BR)CBO
V
(BR) CEO
V
(BR)EBO
EBO
Emit ter Cut -off Current
=0)
(I
C
Collector-B ase
Break dow n Voltage
(IE = 0)
∗ Collect or- E mitt er
Break dow n Voltage
=0)
(I
B
Emitt er-Base
=40V
V
CB
=40V T
V
CB
V
=5V
EB
=5V T
V
EB
cas e
case
=100oC
=100oC
IC=100µA
for BFY50
for BFY51
I
=30mA
C
for BFY50
for BFY51
I
=100µA6V
C
80
60
35
30
Break dow n Voltage
=0)
(I
C
V
∗ Collector-E mitt er
CE(sat)
Saturation Voltage
V
∗ Base-Emitt er
BE(sat )
Saturation Voltage
h
∗ DC Cur rent G ain for BFY50
FE
IC=150mA IB=15mA
for BFY50
for BFY51
=1A IB=0.1A
I
C
for BFY50
for BFY51
IC=150mA IB=15mA
I
=1A IB=0.1A
C
=10mA VCE=10V
I
C
=150mA VCE=10V
I
C
=1A VCE=10V
I
C
20
30
15
0.14
0.14
0.7
0.7
0.95
1.5
40
55
30
0.2
0.35
1
1.6
1.3
2
for BFY51
h
∗ Small Signal Cur rent
fe
Gain
C
f
CBO
Tr ansition Frequency IC=50mA VCE=10V
T
Collector Base
=10mA VCE=10V
I
C
I
=150mA VCE=10V
C
=1A VCE=10V
I
C
30
40
15
VCE=6V f=1KHz
=1mA
I
C
for BFY50
for BFY51
=10mA
I
C
for BFY50
for BFY51
for BFY50
for BFY51
60
50
IE=0 VCB= 10 V f = 1MHz 10 pF
55
70
40
25
30
45
60
100
110
Capacit a nc e
∗
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1%
nA
µA
nA
µA
nA
µA
V
V
V
V
V
V
V
V
V
V
MHz
MHz
2/5
BFY50/BFY51
ELECTRICAL CHARACTERISTICS (continued)
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
h
h
h
t
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1%
Input Impedance IC=10mA VCE=5V f=1KHz
ie
for BFY50
for BFY51
Reverse Voltage Rati o IC=10mA VCE=5V f=1KHz
re
for BFY50
for BFY51
Out put Admitt ance IC=10mA VCE=5V f=1KHz
oe
for BFY50
for BFY51
Delay Time IC=150mA VCC=10V
d
Rise Time IC=150mA VCC=10V
t
r
St orage Time IC=150mA VCC=10V
s
Fall Time IC=150mA VCC=10V
t
f
=15mA VBE=-2V
I
B1
=15mA VBE=-2V
I
B1
=-IB2=15mA
I
B1
=-IB2=15mA
I
B1
180
220
55
70
30
35
15 ns
40 ns
300 ns
60 ns
10
10
Ω
Ω
-6
-6
µS
µS
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BFY50/BFY51
TO-39 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B 0.49 0.019
D 6.6 0.260
E 8.5 0.334
F 9.4 0.370
G 5.08 0.200
H 1.2 0.047
I 0.9 0.035
L45
mm inch
o
(typ.)
I
H
4/5
DA
G
F
E
L
B
P008B
BFY50/BFY51
Information furnished is believed to be accurateand reliable. However,SGS-THOMSONMicroelectronics assumesno responsability for the
consequencesof use ofsuch information nor for any infringement of patentsor otherrights of third parties which may resultsfrom its use. No
licenseis grantedby implicationor otherwise underany patentor patentrights of SGS-THOMSONMicroelectronics. Specificationsmentioned
in this publicationare subject to change without notice.This publication supersedes andreplaces all information previouslysupplied.
SGS-THOMSONMicroelectronics productsarenotauthorizedfor useascriticalcomponents in life supportdevices or systems withoutexpress
writtenapproval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSONMicroelectronics- Printed in Italy - All Rights Reserved
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