SGS Thomson Microelectronics BFY51, BFY50 Datasheet
DESCRIPTION
The BFY50 and BFY52 are silicon planar
epitaxial NPN transistors in Jedec TO-39 metal
case. They are intended for general purpose
linear and switching applications.
BFY50/51
MEDIUM POWER AMPLIFIER
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
BFY50 BFY51
V
V
V
I
P
T
Collector-Base Voltage (IE=0) 80 60 V
CBO
Collector-Emitter Voltage (IB=0) 35 30 V
CEO
Emitter-Base Voltage (IC=0) 6 V
EBO
Collect or Current 1 A
I
C
Collect or Peak Current (tp<5ms) 1.5 A
CM
Total Dissipation at T
tot
Stora ge Temper at u re -65 to 200
stg
Max. Operati ng J unc t i on Temper at u re 200
T
j
at T
amb
case
≤ 25oC
≤ 25oC
0.8
5
W
W
o
C
o
C
November 1997
1/5
BFY50/BFY51
THERMAL DATA
R
thj-case
R
thj- amb
Ther mal Resist ance Junct ion-Case Max
Thermal Resistance Junction-Ambient Max
35
218
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
I
CBO
Collector Cut- of f
Current (I
E
=0)
for BFY50
VCB=60V
=60V T
V
CB
cas e
=100oC
50
2.5
for BFY51
50
2.5
50
2.5
I
V
(BR)CBO
V
(BR) CEO
V
(BR)EBO
EBO
Emit ter Cut -off Current
=0)
(I
C
Collector-B ase
Break dow n Voltage
(IE = 0)
∗ Collect or- E mitt er
Break dow n Voltage
=0)
(I
B
Emitt er-Base
=40V
V
CB
=40V T
V
CB
V
=5V
EB
=5V T
V
EB
cas e
case
=100oC
=100oC
IC=100µA
for BFY50
for BFY51
I
=30mA
C
for BFY50
for BFY51
I
=100µA6V
C
80
60
35
30
Break dow n Voltage
=0)
(I
C
V
∗ Collector-E mitt er
CE(sat)
Saturation Voltage
V
∗ Base-Emitt er
BE(sat )
Saturation Voltage
h
∗ DC Cur rent G ain for BFY50
FE
IC=150mA IB=15mA
for BFY50
for BFY51
=1A IB=0.1A
I
C
for BFY50
for BFY51
IC=150mA IB=15mA
I
=1A IB=0.1A
C
=10mA VCE=10V
I
C
=150mA VCE=10V
I
C
=1A VCE=10V
I
C
20
30
15
0.14
0.14
0.7
0.7
0.95
1.5
40
55
30
0.2
0.35
1
1.6
1.3
2
for BFY51
h
∗ Small Signal Cur rent
fe
Gain
C
f
CBO
Tr ansition Frequency IC=50mA VCE=10V
T
Collector Base
=10mA VCE=10V
I
C
I
=150mA VCE=10V
C
=1A VCE=10V
I
C
30
40
15
VCE=6V f=1KHz
=1mA
I
C
for BFY50
for BFY51
=10mA
I
C
for BFY50
for BFY51
for BFY50
for BFY51
60
50
IE=0 VCB= 10 V f = 1MHz 10 pF
55
70
40
25
30
45
60
100
110
Capacit a nc e
∗
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1%
nA
µA
nA
µA
nA
µA
V
V
V
V
V
V
V
V
V
V
MHz
MHz
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